APT10078BLLG Microchip Technology
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 37.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT10078BLLG Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V.
Weitere Produktangebote APT10078BLLG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APT10078BLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
APT10078BLLG | Hersteller : Microchip Technology | Trans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
APT10078BLLG | Hersteller : Microchip Technology | Trans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
APT10078BLLG | Hersteller : MICROSEMI |
TO247/POWER MOSFET - MOS7 APT10078 Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
||
APT10078BLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V |
Produkt ist nicht verfügbar |
||
APT10078BLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar |
Produkt ist nicht verfügbar |