APT1201R5BVRG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
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Technische Details APT1201R5BVRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3, On-state resistance: 1.5Ω, Type of transistor: N-MOSFET, Polarisation: unipolar, Mounting: THT, Gate charge: 28nC, Technology: POWER MOS 5®, Kind of channel: enhanced, Case: TO247-3, Drain-source voltage: 1.2kV, Drain current: 10A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1201R5BVRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT1201R5BVRG | Hersteller : Microchip Technology |
 MOSFET MOSFET MOS5 1200 V 1.5 Ohm TO-247 |
Produkt ist nicht verfügbar |
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APT1201R5BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Gate charge: 28nC Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A |
Produkt ist nicht verfügbar |