APT10050LVFRG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Mounting: THT
Case: TO264
Technology: POWER MOS 5®
Gate charge: 500nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Mounting: THT
Case: TO264
Technology: POWER MOS 5®
Gate charge: 500nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 36.95 EUR |
3+ | 34.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT10050LVFRG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1000V 21A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote APT10050LVFRG nach Preis ab 34.93 EUR bis 41.59 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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APT10050LVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Mounting: THT Case: TO264 Technology: POWER MOS 5® Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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APT10050LVFRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 21A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10050LVFRG | Hersteller : Microchip Technology | MOSFET FG, FREDFET, 1000V, TO-264, RoHS |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10050LVFRG | Hersteller : Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT10050LVFRG | Hersteller : Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT10050LVFRG | Hersteller : Microchip Technology / Atmel | Aluminium Electrolytic Capacitors - Radial Leaded RADIAL |
Produkt ist nicht verfügbar |