APT10090BFLLG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 71nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Drain-source voltage: 1kV
Drain current: 12A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 71nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Drain-source voltage: 1kV
Drain current: 12A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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Technische Details APT10090BFLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1000V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V.
Weitere Produktangebote APT10090BFLLG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT10090BFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT10090BFLLG | Hersteller : Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, TO-247, RoHS |
Produkt ist nicht verfügbar |
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APT10090BFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 71nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Drain-source voltage: 1kV Drain current: 12A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 298W Polarisation: unipolar |
Produkt ist nicht verfügbar |