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APT106N60LC6 Microchip Technology
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 34.28 EUR |
500+ | 29.59 EUR |
1000+ | 28.95 EUR |
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Technische Details APT106N60LC6 Microchip Technology
Description: MOSFET N-CH 600V 106A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.4mA, Supplier Device Package: TO-264 (L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V.
Weitere Produktangebote APT106N60LC6 nach Preis ab 34.39 EUR bis 34.39 EUR
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APT106N60LC6 | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.4mA Supplier Device Package: TO-264 (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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APT106N60LC6 | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO264 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT106N60LC6 | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO264 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |