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APTGT75DDA60T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7946 Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75H60T1G APTGT75H60T1G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7955 Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75H60T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7956 Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75TA120PG APTGT75TA120PG Microchip Technology APTGT75TA120PG-Rev2.pdf Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75TDU120PG APTGT75TDU120PG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75TDU60PG Microchip Technology APTGT75TDU60PG-Rev1.pdf Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75X60T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7974 Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTM100A13SCG APTM100A13SCG Microchip Technology Description: MOSFET 2N-CH 1000V 65A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM100A23STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=7995 Description: MOSFET 2N-CH 1000V 36A SP4
Produkt ist nicht verfügbar
APTM100DAM90G Microchip Technology 8004-aptm100dam90g-datasheet Description: MOSFET N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
Produkt ist nicht verfügbar
APTM100DSK35T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM100H45SCTG APTM100H45SCTG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8014 Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+355.29 EUR
APTM100H45STG APTM100H45STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8015 Description: MOSFET 4N-CH 1000V 18A SP4
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
APTM100SK33T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 23A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Produkt ist nicht verfügbar
APTM100UM45DAG APTM100UM45DAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
1+717.32 EUR
APTM100UM65DAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8035 Description: MOSFET N-CH 1000V 145A SP6
Produkt ist nicht verfügbar
APTM100UM65SAG APTM100UM65SAG Microchip Technology 8037-aptm100um65sag-datasheet Description: MOSFET N-CH 1000V 145A SP6
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
APTM10AM02FG APTM10AM02FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM10DAM02G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8042 Description: MOSFET N-CH 100V 495A SP6
Produkt ist nicht verfügbar
APTM10DSKM09T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8049 Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM10DSKM19T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM10DUM02G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM10HM09FT3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8055 Description: MOSFET 4N-CH 100V 139A SP3
Produkt ist nicht verfügbar
APTM10HM19FT3G APTM10HM19FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM10SKM02G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8058 Description: MOSFET N-CH 100V 495A SP6
Produkt ist nicht verfügbar
APTM10SKM05TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 100V 278A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
APTM10UM02FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8065 Description: MOSFET N-CH 100V 570A SP6
Produkt ist nicht verfügbar
APTM120A15FG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8066 Description: MOSFET 2N-CH 1200V 60A SP6
Produkt ist nicht verfügbar
APTM120A20DG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8067 Description: MOSFET 2N-CH 1200V 50A SP6
Produkt ist nicht verfügbar
APTM120A20SG Microchip Technology 8068-aptm120a20sg-datasheet Description: MOSFET 2N-CH 1200V 50A SP6
Produkt ist nicht verfügbar
APTM120A29FTG Microchip Technology 8069-aptm120a29ftg-datasheet Description: MOSFET 2N-CH 1200V 34A SP4
Produkt ist nicht verfügbar
APTM120DA30T1G Microchip Technology 8075-aptm120da30t1g-datasheet Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Produkt ist nicht verfügbar
APTM120DU15G APTM120DU15G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8080 Description: MOSFET 2N-CH 1200V 60A SP6
Produkt ist nicht verfügbar
APTM120H140FT1G APTM120H140FT1G Microchip Technology 8082-aptm120h140ft1g-datasheet Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
APTM120H29FG APTM120H29FG Microchip Technology APTM120H29FG-Rev2.pdf Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM120U10SAG APTM120U10SAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8098 Description: MOSFET N-CH 1200V 116A SP6
Produkt ist nicht verfügbar
APTM120UM70DAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8101 Description: MOSFET N-CH 1200V 171A SP6
Produkt ist nicht verfügbar
APTM120UM70FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8103 Description: MOSFET N-CH 1200V 171A SP6
Produkt ist nicht verfügbar
APTM20AM04FG APTM20AM04FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+585.78 EUR
APTM20AM05FG Microchip Technology APTM20AM05F.pdf Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM20AM06SG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8111 Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
Produkt ist nicht verfügbar
APTM20DAM05G APTM20DAM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Produkt ist nicht verfügbar
APTM20DUM04G APTM20DUM04G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8125 Description: MOSFET 2N-CH 200V 372A SP6
Produkt ist nicht verfügbar
APTM20DUM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM20DUM08TG Microchip Technology 8130-aptm20dum08tg-datasheet Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Produkt ist nicht verfügbar
APTM20HM20FTG Microchip Technology 8135-aptm20hm20ftg-datasheet Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM20HM20STG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM20SKM04G APTM20SKM04G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8137 Description: MOSFET N-CH 200V 372A SP6
Produkt ist nicht verfügbar
APTM20SKM08TG Microchip Technology 8139-aptm20skm08tg-datasheet Description: MOSFET N-CH 200V 208A SP4
Produkt ist nicht verfügbar
APTM20UM03FAG APTM20UM03FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8144 Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Produkt ist nicht verfügbar
APTM20UM04SAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8146 Description: MOSFET N-CH 200V 417A SP6
Produkt ist nicht verfügbar
APTM50AM24SG APTM50AM24SG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8155 Description: MOSFET 2N-CH 500V 150A SP6
Produkt ist nicht verfügbar
APTM50AM35FTG APTM50AM35FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM50AM38FTG APTM50AM38FTG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8159 Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM50AM38STG APTM50AM38STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8161 Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+309.39 EUR
APTM50DAM17G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8164 Description: MOSFET N-CH 500V 180A SP6
Produkt ist nicht verfügbar
APTM50DDAM65T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8170 Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
Produkt ist nicht verfügbar
APTM50H14FT3G APTM50H14FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
Produkt ist nicht verfügbar
APTM50H15FT1G Microchip Technology APTM50H15UT1G-Rev0.pdf Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
APTM50HM35FG Microchip Technology 8188-aptm50hm35fg-datasheet Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTGT75DDA60T3G index.php?option=com_docman&task=doc_download&gid=7946
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75H60T1G index.php?option=com_docman&task=doc_download&gid=7955
APTGT75H60T1G
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75H60T3G index.php?option=com_docman&task=doc_download&gid=7956
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75TA120PG APTGT75TA120PG-Rev2.pdf
APTGT75TA120PG
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75TDU120PG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT75TDU120PG
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75TDU60PG APTGT75TDU60PG-Rev1.pdf
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGT75X60T3G index.php?option=com_docman&task=doc_download&gid=7974
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTM100A13SCG
APTM100A13SCG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 65A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM100A23STG index.php?option=com_docman&task=doc_download&gid=7995
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 36A SP4
Produkt ist nicht verfügbar
APTM100DAM90G 8004-aptm100dam90g-datasheet
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
Produkt ist nicht verfügbar
APTM100DSK35T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM100H45SCTG index.php?option=com_docman&task=doc_download&gid=8014
APTM100H45SCTG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+355.29 EUR
APTM100H45STG index.php?option=com_docman&task=doc_download&gid=8015
APTM100H45STG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
APTM100SK33T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 23A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Produkt ist nicht verfügbar
APTM100UM45DAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM100UM45DAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+717.32 EUR
APTM100UM65DAG index.php?option=com_docman&task=doc_download&gid=8035
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Produkt ist nicht verfügbar
APTM100UM65SAG 8037-aptm100um65sag-datasheet
APTM100UM65SAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
APTM10AM02FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10AM02FG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM10DAM02G index.php?option=com_docman&task=doc_download&gid=8042
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
Produkt ist nicht verfügbar
APTM10DSKM09T3G index.php?option=com_docman&task=doc_download&gid=8049
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM10DSKM19T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM10DUM02G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM10HM09FT3G index.php?option=com_docman&task=doc_download&gid=8055
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 139A SP3
Produkt ist nicht verfügbar
APTM10HM19FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10HM19FT3G
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
APTM10SKM02G index.php?option=com_docman&task=doc_download&gid=8058
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
Produkt ist nicht verfügbar
APTM10SKM05TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 278A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
APTM10UM02FAG index.php?option=com_docman&task=doc_download&gid=8065
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 570A SP6
Produkt ist nicht verfügbar
APTM120A15FG index.php?option=com_docman&task=doc_download&gid=8066
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Produkt ist nicht verfügbar
APTM120A20DG index.php?option=com_docman&task=doc_download&gid=8067
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Produkt ist nicht verfügbar
APTM120A20SG 8068-aptm120a20sg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Produkt ist nicht verfügbar
APTM120A29FTG 8069-aptm120a29ftg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 34A SP4
Produkt ist nicht verfügbar
APTM120DA30T1G 8075-aptm120da30t1g-datasheet
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Produkt ist nicht verfügbar
APTM120DU15G index.php?option=com_docman&task=doc_download&gid=8080
APTM120DU15G
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Produkt ist nicht verfügbar
APTM120H140FT1G 8082-aptm120h140ft1g-datasheet
APTM120H140FT1G
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
APTM120H29FG APTM120H29FG-Rev2.pdf
APTM120H29FG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM120U10SAG index.php?option=com_docman&task=doc_download&gid=8098
APTM120U10SAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6
Produkt ist nicht verfügbar
APTM120UM70DAG index.php?option=com_docman&task=doc_download&gid=8101
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Produkt ist nicht verfügbar
APTM120UM70FAG index.php?option=com_docman&task=doc_download&gid=8103
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Produkt ist nicht verfügbar
APTM20AM04FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20AM04FG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+585.78 EUR
APTM20AM05FG APTM20AM05F.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM20AM06SG index.php?option=com_docman&task=doc_download&gid=8111
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
Produkt ist nicht verfügbar
APTM20DAM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20DAM05G
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Produkt ist nicht verfügbar
APTM20DUM04G index.php?option=com_docman&task=doc_download&gid=8125
APTM20DUM04G
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Produkt ist nicht verfügbar
APTM20DUM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
APTM20DUM08TG 8130-aptm20dum08tg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Produkt ist nicht verfügbar
APTM20HM20FTG 8135-aptm20hm20ftg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM20HM20STG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM20SKM04G index.php?option=com_docman&task=doc_download&gid=8137
APTM20SKM04G
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Produkt ist nicht verfügbar
APTM20SKM08TG 8139-aptm20skm08tg-datasheet
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Produkt ist nicht verfügbar
APTM20UM03FAG index.php?option=com_docman&task=doc_download&gid=8144
APTM20UM03FAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Produkt ist nicht verfügbar
APTM20UM04SAG index.php?option=com_docman&task=doc_download&gid=8146
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 417A SP6
Produkt ist nicht verfügbar
APTM50AM24SG index.php?option=com_docman&task=doc_download&gid=8155
APTM50AM24SG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 150A SP6
Produkt ist nicht verfügbar
APTM50AM35FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50AM35FTG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM50AM38FTG index.php?option=com_docman&task=doc_download&gid=8159
APTM50AM38FTG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM50AM38STG index.php?option=com_docman&task=doc_download&gid=8161
APTM50AM38STG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+309.39 EUR
APTM50DAM17G index.php?option=com_docman&task=doc_download&gid=8164
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 180A SP6
Produkt ist nicht verfügbar
APTM50DDAM65T3G index.php?option=com_docman&task=doc_download&gid=8170
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
Produkt ist nicht verfügbar
APTM50H14FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50H14FT3G
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
Produkt ist nicht verfügbar
APTM50H15FT1G APTM50H15UT1G-Rev0.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
APTM50HM35FG 8188-aptm50hm35fg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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