Produkte > MICROCHIP TECHNOLOGY > APTM50AM35FTG
APTM50AM35FTG

APTM50AM35FTG Microchip Technology


13898158-aptm50am35ftg-rev2-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 500V 99A 20-Pin Case SP-4 Tube
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details APTM50AM35FTG Microchip Technology

Description: MOSFET 2N-CH 500V 99A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 781W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 99A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP4.

Weitere Produktangebote APTM50AM35FTG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
APTM50AM35FTG Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf APTM50AM35FTG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM50AM35FTG APTM50AM35FTG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
APTM50AM35FTG Hersteller : Microsemi APTM50AM35FTG-Rev3-599268.pdf Discrete Semiconductor Modules Power Module - Mosfet
Produkt ist nicht verfügbar