Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1228 nach 1259
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SMAJ8.5CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 27.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3585 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ8.5CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; bidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 104.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 40µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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ZXM61P03FTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.625W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -900mA Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1325 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP510DL-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Polarisation: unipolar Drain current: -130mA Kind of channel: enhanced Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω |
Produkt ist nicht verfügbar |
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DMP510DL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Polarisation: unipolar Drain current: -0.13A Kind of channel: enhanced Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω |
Produkt ist nicht verfügbar |
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GBJ2502-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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GBJ2504-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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BCM857BS-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1060 Stücke: Lieferzeit 14-21 Tag (e) |
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74AHCT1G04SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC Mounting: SMD Kind of package: reel; tape Case: SOT353 Type of integrated circuit: digital Number of channels: single; 1 Kind of output: totem pole Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of gate: NOT Family: AHC |
auf Bestellung 2727 Stücke: Lieferzeit 14-21 Tag (e) |
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74AHCT1G04W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 1 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: totem pole Family: AHCT |
Produkt ist nicht verfügbar |
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74LVCE1G04SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 1; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE Mounting: SMD Kind of package: reel; tape Case: SOT353 Type of integrated circuit: digital Number of channels: 1 Kind of output: totem pole Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Technology: CMOS; TTL Kind of integrated circuit: inverter Family: LVCE |
Produkt ist nicht verfügbar |
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74LVCE1G04W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 1; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
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74AUP2G3404FW3-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,inverter; Ch: 2; CMOS; SMD; X2-DFN0910-6; AUP Mounting: SMD Case: X2-DFN0910-6 Kind of package: reel; tape Operating temperature: -40...150°C Type of integrated circuit: digital Number of channels: 2 Kind of output: push-pull Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: buffer; inverter Family: AUP Supply voltage: 0.8...3.6V DC |
Produkt ist nicht verfügbar |
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DMG6898LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 30A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMG6968U-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6968UDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Power dissipation: 0.85W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6968UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
Produkt ist nicht verfügbar |
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DMP3068L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 5420 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C27-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 27V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZT52C27-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 27V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 2175 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C27Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 27V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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BZT52C27S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 27V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 27V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZT52C27SQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 27V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 27V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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DMN3730UFB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 3A Drain current: 730mA |
Produkt ist nicht verfügbar |
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DMN3730UFB4-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V On-state resistance: 0.46Ω Type of transistor: N-MOSFET Power dissipation: 0.45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A Drain current: 0.75A |
Produkt ist nicht verfügbar |
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DMN3730UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X2-DFN1006-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 3A Drain current: 730mA |
Produkt ist nicht verfügbar |
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DMP1046UFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 17.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -12V |
Produkt ist nicht verfügbar |
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DMN6070SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8 Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 1.5W Gate charge: 12.3nC Polarisation: unipolar Drain current: 2.1A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: SO8 On-state resistance: 0.1Ω Mounting: SMD |
Produkt ist nicht verfügbar |
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DMN6070SY-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 15A; 2.1W; SOT89 Kind of package: reel; tape Pulsed drain current: 15A Power dissipation: 2.1W Gate charge: 12.3nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT89 On-state resistance: 0.11Ω Mounting: SMD |
Produkt ist nicht verfügbar |
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S3M-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Capacitance: 40pF Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S3MB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 40pF Case: SMB Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 10968 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7335-12SNG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFN6; SMD Case: DFN6 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Kind of voltage regulator: fixed; LDO; linear Input voltage: 2...6V Manufacturer series: AP7335 Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Output voltage: 1.2V Number of channels: 1 Tolerance: ±2% |
Produkt ist nicht verfügbar |
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BZT52C11T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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SMAZ18-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Zener current: 56mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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ZVN3310FTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.1A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3354 Stücke: Lieferzeit 14-21 Tag (e) |
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PDS1040L-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 10A; PowerDI®5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.49V Case: PowerDI®5 Kind of package: reel; tape Max. forward impulse current: 275A |
Produkt ist nicht verfügbar |
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AP7335-30WG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±2% Manufacturer series: AP7335 Kind of package: reel; tape Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 3V Case: SOT25 Number of channels: 1 Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
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BZT52C5V6T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR60A200CT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube Type of diode: Schottky rectifying Technology: SBR® Mounting: THT Max. off-state voltage: 200V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 250A Max. forward voltage: 0.96V |
Produkt ist nicht verfügbar |
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SBR60A100CT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SBR®; THT; 100V; 30Ax2; TO220AB; tube Type of diode: Schottky rectifying Technology: SBR® Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 350A Max. forward voltage: 0.84V |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR60A300CT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SBR®; THT; 300V; 30Ax2; TO220AB; tube Type of diode: Schottky rectifying Technology: SBR® Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 235A Max. forward voltage: 0.94V |
Produkt ist nicht verfügbar |
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SBR60A45CT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SBR®; THT; 45V; 60A; TO220AB; tube Type of diode: Schottky rectifying Technology: SBR® Mounting: THT Max. off-state voltage: 45V Load current: 60A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 0.55V |
Produkt ist nicht verfügbar |
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DMTH45M5LPDWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 55A On-state resistance: 7.9mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
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DMTH45M5SPDWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3.3W Power dissipation: 3.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 55A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
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DMNH6008SCT | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 60V Drain current: 90A On-state resistance: 6mΩ |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ51CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 56.7÷62.7V; 18.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 18.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DDTB122LC-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 0.22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 0.22kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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74LVC240AT20-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LVC Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 2189 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC241AT20-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LVC Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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DMMT5551S-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Power dissipation: 0.3W Mounting: SMD Kind of package: reel; tape Case: SOT26 Frequency: 100...300MHz Collector-emitter voltage: 160V Current gain: 50...250 Collector current: 0.2A Type of transistor: NPN x2 Polarisation: bipolar |
Produkt ist nicht verfügbar |
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74LVC1G126FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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74LVC1G126FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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74LVC1G126SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA Mounting: SMD Kind of package: reel; tape Case: SOT353 Manufacturer series: LVC Type of integrated circuit: digital Number of channels: 1 Quiescent current: 200µA Kind of output: 3-state Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of integrated circuit: buffer; non-inverting |
auf Bestellung 7464 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G126W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SOT25 Manufacturer series: LVC Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 200µA |
auf Bestellung 1102 Stücke: Lieferzeit 14-21 Tag (e) |
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74AUP2G17DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SOT363 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of output: push-pull Kind of package: reel; tape Quiescent current: 0.9µA Kind of input: with Schmitt trigger |
auf Bestellung 2961 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7384-33Y-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.05A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3.3V Output current: 50mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7384 |
Produkt ist nicht verfügbar |
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AP2138N-1.8TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.25A; SOT23; SMD Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: AP2138 Output voltage: 1.8V Output current: 0.25A Voltage drop: 0.6V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...6V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23 Tolerance: ±2% |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ85A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape Type of diode: TVS Case: SMA Mounting: SMD Max. forward impulse current: 2.9A Peak pulse power dissipation: 0.4kW Features of semiconductor devices: glass passivated Max. off-state voltage: 85V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Breakdown voltage: 94.4...104V |
auf Bestellung 4025 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ85CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 94.4÷104V; 2.9A; bidirectional; SMA; reel,tape Type of diode: TVS Case: SMA Mounting: SMD Max. forward impulse current: 2.9A Peak pulse power dissipation: 0.4kW Features of semiconductor devices: glass passivated Max. off-state voltage: 85V Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 5µA Breakdown voltage: 94.4...104V |
Produkt ist nicht verfügbar |
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AP7332-1218FM-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,1.8V; 300mA; SOT26 Mounting: SMD Tolerance: ±2% Operating temperature: -40...85°C Manufacturer series: AP7332 Case: SOT26 Output voltage: 1.2V; 1.8V Number of channels: 2 Kind of voltage regulator: fixed; LDO; linear Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.6V |
Produkt ist nicht verfügbar |
SMAJ8.5CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3585 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 0.25 EUR |
635+ | 0.11 EUR |
715+ | 0.1 EUR |
800+ | 0.09 EUR |
845+ | 0.085 EUR |
SMCJ8.5CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 40µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 40µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
ZXM61P03FTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1325 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 0.49 EUR |
395+ | 0.18 EUR |
418+ | 0.17 EUR |
DMP510DL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -130mA
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -130mA
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Produkt ist nicht verfügbar
DMP510DL-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Produkt ist nicht verfügbar
GBJ2502-F |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
GBJ2504-F |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
BCM857BS-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1060+ | 0.067 EUR |
74AHCT1G04SE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: single; 1
Kind of output: totem pole
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of gate: NOT
Family: AHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: single; 1
Kind of output: totem pole
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of gate: NOT
Family: AHC
auf Bestellung 2727 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1078+ | 0.066 EUR |
1352+ | 0.053 EUR |
1719+ | 0.042 EUR |
1812+ | 0.039 EUR |
74AHCT1G04W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
74LVCE1G04SE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: 1
Kind of output: totem pole
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of integrated circuit: inverter
Family: LVCE
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: 1
Kind of output: totem pole
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of integrated circuit: inverter
Family: LVCE
Produkt ist nicht verfügbar
74LVCE1G04W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
74AUP2G3404FW3-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 2; CMOS; SMD; X2-DFN0910-6; AUP
Mounting: SMD
Case: X2-DFN0910-6
Kind of package: reel; tape
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Family: AUP
Supply voltage: 0.8...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 2; CMOS; SMD; X2-DFN0910-6; AUP
Mounting: SMD
Case: X2-DFN0910-6
Kind of package: reel; tape
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Family: AUP
Supply voltage: 0.8...3.6V DC
Produkt ist nicht verfügbar
DMG6898LSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 30A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 30A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMG6968U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
490+ | 0.15 EUR |
540+ | 0.13 EUR |
600+ | 0.12 EUR |
DMG6968UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
132+ | 0.54 EUR |
332+ | 0.22 EUR |
353+ | 0.2 EUR |
DMG6968UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Produkt ist nicht verfügbar
DMP3068L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5420 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
615+ | 0.12 EUR |
770+ | 0.093 EUR |
850+ | 0.084 EUR |
900+ | 0.08 EUR |
3000+ | 0.078 EUR |
BZT52C27-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
BZT52C27-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 2175 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 0.04 EUR |
2175+ | 0.033 EUR |
BZT52C27Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
BZT52C27S-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 27V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 27V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
BZT52C27SQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 27V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 27V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
DMN3730UFB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Produkt ist nicht verfügbar
DMN3730UFB4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.46Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain current: 0.75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.46Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain current: 0.75A
Produkt ist nicht verfügbar
DMN3730UFB4-7B |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Produkt ist nicht verfügbar
DMP1046UFDB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain current: -4A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 17.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain current: -4A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 17.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
DMN6070SSDQ-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.5W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 2.1A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 0.1Ω
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.5W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 2.1A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 0.1Ω
Mounting: SMD
Produkt ist nicht verfügbar
DMN6070SY-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 15A; 2.1W; SOT89
Kind of package: reel; tape
Pulsed drain current: 15A
Power dissipation: 2.1W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 0.11Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 15A; 2.1W; SOT89
Kind of package: reel; tape
Pulsed drain current: 15A
Power dissipation: 2.1W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 0.11Ω
Mounting: SMD
Produkt ist nicht verfügbar
S3M-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
S3MB-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 10968 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
195+ | 0.37 EUR |
220+ | 0.33 EUR |
249+ | 0.29 EUR |
283+ | 0.25 EUR |
589+ | 0.12 EUR |
AP7335-12SNG-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFN6; SMD
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Manufacturer series: AP7335
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.2V
Number of channels: 1
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFN6; SMD
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Manufacturer series: AP7335
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 1.2V
Number of channels: 1
Tolerance: ±2%
Produkt ist nicht verfügbar
BZT52C11T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
SMAZ18-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 56mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 56mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
ZVN3310FTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3354 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
177+ | 0.4 EUR |
196+ | 0.37 EUR |
255+ | 0.28 EUR |
270+ | 0.27 EUR |
PDS1040L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 10A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 275A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 10A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 275A
Produkt ist nicht verfügbar
AP7335-30WG-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±2%
Manufacturer series: AP7335
Kind of package: reel; tape
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3V
Case: SOT25
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±2%
Manufacturer series: AP7335
Kind of package: reel; tape
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3V
Case: SOT25
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
BZT52C5V6T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1580+ | 0.046 EUR |
1860+ | 0.039 EUR |
2020+ | 0.035 EUR |
2120+ | 0.034 EUR |
SBR60A200CT |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.96V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.96V
Produkt ist nicht verfügbar
SBR60A100CT |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 350A
Max. forward voltage: 0.84V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 350A
Max. forward voltage: 0.84V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.77 EUR |
29+ | 2.49 EUR |
36+ | 2.02 EUR |
38+ | 1.92 EUR |
SBR60A300CT |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 235A
Max. forward voltage: 0.94V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 235A
Max. forward voltage: 0.94V
Produkt ist nicht verfügbar
SBR60A45CT |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 45V; 60A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 45V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 0.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 45V; 60A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 45V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 0.55V
Produkt ist nicht verfügbar
DMTH45M5LPDWQ-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 316A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 55A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 316A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 55A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
DMTH45M5SPDWQ-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3.3W
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 316A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 55A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3.3W
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 316A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 55A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
DMNH6008SCT |
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Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 6mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 6mΩ
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.74 EUR |
46+ | 1.56 EUR |
52+ | 1.39 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
58+ | 1.24 EUR |
SMCJ51CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 56.7÷62.7V; 18.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 18.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 56.7÷62.7V; 18.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 18.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DDTB122LC-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 0.22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 0.22kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 0.22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 0.22kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
74LVC240AT20-13 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 2189 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
278+ | 0.26 EUR |
329+ | 0.22 EUR |
341+ | 0.21 EUR |
358+ | 0.2 EUR |
376+ | 0.19 EUR |
74LVC241AT20-13 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
DMMT5551S-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Power dissipation: 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Power dissipation: 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Polarisation: bipolar
Produkt ist nicht verfügbar
74LVC1G126FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC1G126FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC1G126SE-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: LVC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: LVC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 7464 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
658+ | 0.11 EUR |
1169+ | 0.061 EUR |
1254+ | 0.057 EUR |
1425+ | 0.05 EUR |
1507+ | 0.047 EUR |
3000+ | 0.046 EUR |
74LVC1G126W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 200µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 200µA
auf Bestellung 1102 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
353+ | 0.2 EUR |
439+ | 0.16 EUR |
585+ | 0.12 EUR |
1000+ | 0.072 EUR |
1102+ | 0.064 EUR |
74AUP2G17DW-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SOT363
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of output: push-pull
Kind of package: reel; tape
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SOT363
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of output: push-pull
Kind of package: reel; tape
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
auf Bestellung 2961 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
313+ | 0.23 EUR |
417+ | 0.17 EUR |
468+ | 0.15 EUR |
603+ | 0.12 EUR |
633+ | 0.11 EUR |
AP7384-33Y-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.05A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 50mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7384
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.05A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 50mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7384
Produkt ist nicht verfügbar
AP2138N-1.8TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.25A; SOT23; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP2138
Output voltage: 1.8V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.25A; SOT23; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP2138
Output voltage: 1.8V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
167+ | 0.43 EUR |
223+ | 0.32 EUR |
388+ | 0.18 EUR |
544+ | 0.13 EUR |
575+ | 0.12 EUR |
SMAJ85A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. forward impulse current: 2.9A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 85V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Breakdown voltage: 94.4...104V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. forward impulse current: 2.9A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 85V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Breakdown voltage: 94.4...104V
auf Bestellung 4025 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
610+ | 0.12 EUR |
675+ | 0.11 EUR |
815+ | 0.088 EUR |
865+ | 0.083 EUR |
SMAJ85CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 94.4÷104V; 2.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. forward impulse current: 2.9A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 85V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Breakdown voltage: 94.4...104V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 94.4÷104V; 2.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. forward impulse current: 2.9A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 85V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Breakdown voltage: 94.4...104V
Produkt ist nicht verfügbar
AP7332-1218FM-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,1.8V; 300mA; SOT26
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: AP7332
Case: SOT26
Output voltage: 1.2V; 1.8V
Number of channels: 2
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.6V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,1.8V; 300mA; SOT26
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: AP7332
Case: SOT26
Output voltage: 1.2V; 1.8V
Number of channels: 2
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.6V
Produkt ist nicht verfügbar