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DMTH45M5SPDWQ-13 DIODES INCORPORATED


Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3.3W
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 316A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 55A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH45M5SPDWQ-13 DIODES INCORPORATED

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3.3W, Power dissipation: 3.3W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 13.2nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 316A, Mounting: SMD, Case: PowerDI5060-8, Drain-source voltage: 40V, Drain current: 55A, On-state resistance: 5.5mΩ, Type of transistor: N-MOSFET x2, Anzahl je Verpackung: 2500 Stücke.

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DMTH45M5SPDWQ-13 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3.3W
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 316A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 55A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar