Produkte > DIODES INCORPORATED > DMTH45M5LPDWQ-13

DMTH45M5LPDWQ-13 Diodes Incorporated

Name: DMTH45M5LPDWQ-13
Brand: Diodes Incorporated
SKU: 24050192-3
Price: 1.06 EUR
Availability: InStock

Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Part Status: Active

auf Bestellung 2425 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
8+	2.32 EUR
10+	2.08 EUR
100+	1.62 EUR
500+	1.34 EUR
1000+	1.06 EUR

Mindestbestellmenge: 8

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Technische Details DMTH45M5LPDWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 60W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Part Status: Active.

Weitere Produktangebote DMTH45M5LPDWQ-13

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
DMTH45M5LPDWQ-13	Hersteller : Diodes Inc	N Channel MOSFET Transistor	Produkt ist nicht verfügbar
DMTH45M5LPDWQ-13	Hersteller : DIODES INCORPORATED	Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 55A On-state resistance: 7.9mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 2500 Stücke	Produkt ist nicht verfügbar
DMTH45M5LPDWQ-13	Hersteller : Diodes Incorporated	Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Part Status: Active	Produkt ist nicht verfügbar
DMTH45M5LPDWQ-13	Hersteller : DIODES INCORPORATED	Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 55A On-state resistance: 7.9mΩ Type of transistor: N-MOSFET x2	Produkt ist nicht verfügbar