DMNH6008SCT DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 6mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 6mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.74 EUR |
46+ | 1.56 EUR |
52+ | 1.39 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
58+ | 1.24 EUR |
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Technische Details DMNH6008SCT DIODES INCORPORATED
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB, Case: TO220AB, Mounting: THT, Kind of package: tube, Type of transistor: N-MOSFET, Power dissipation: 100W, Polarisation: unipolar, Gate charge: 21nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 200A, Drain-source voltage: 60V, Drain current: 90A, On-state resistance: 6mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMNH6008SCT nach Preis ab 1.24 EUR bis 1.74 EUR
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DMNH6008SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 60V Drain current: 90A On-state resistance: 6mΩ |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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DMNH6008SCT | Hersteller : Diodes Incorporated | Description: MOSFET N-CH 60V 130A TO220AB |
Produkt ist nicht verfügbar |
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DMNH6008SCT | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V |
Produkt ist nicht verfügbar |