DMN6070SY-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 4.1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V
auf Bestellung 147500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.2 EUR |
| 5000+ | 0.19 EUR |
| 12500+ | 0.17 EUR |
| 62500+ | 0.16 EUR |
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Technische Details DMN6070SY-13 Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-89-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V.
Weitere Produktangebote DMN6070SY-13 nach Preis ab 0.17 EUR bis 0.75 EUR
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DMN6070SY-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 4.1A SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V |
auf Bestellung 147523 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SY-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 23491 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SY-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 4.1A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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| DMN6070SY-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 15A; 2.1W; SOT89 Kind of package: reel; tape Pulsed drain current: 15A Power dissipation: 2.1W Gate charge: 12.3nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT89 On-state resistance: 0.11Ω Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN6070SY-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 15A; 2.1W; SOT89 Kind of package: reel; tape Pulsed drain current: 15A Power dissipation: 2.1W Gate charge: 12.3nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT89 On-state resistance: 0.11Ω Mounting: SMD |
Produkt ist nicht verfügbar |