Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (139711) > Seite 2221 nach 2329

Wählen Sie Seite:   [  << Vorherige Seite ]  1 232 464 696 928 1160 1392 1624 1856 2088 2216 2217 2218 2219 2220 2221 2222 2223 2224 2225 2226 2320 2329  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
FDS9926A FDS9926A ONSEMI FDS9926A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1355 Stücke:
Lieferzeit 14-21 Tag (e)
110+0.65 EUR
123+ 0.58 EUR
158+ 0.45 EUR
167+ 0.43 EUR
Mindestbestellmenge: 110
FDD2572 FDD2572 ONSEMI FDD2572.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDMQ8205 ONSEMI FDMQ8205.pdf Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Case: WDFN12
Type of integrated circuit: driver
Produkt ist nicht verfügbar
FDD3672 FDD3672 ONSEMI FDD3672.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
43+ 1.69 EUR
57+ 1.26 EUR
61+ 1.19 EUR
Mindestbestellmenge: 39
FDD3682 FDD3682 ONSEMI FDD3682.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD306P FDD306P ONSEMI FDD306P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
75+ 0.96 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 50
FDD3706 FDD3706 ONSEMI FDD%2CFDU3706.pdf ONSM-S-A0003586648-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 50A; Idm: 60A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 60A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD3860 FDD3860 ONSEMI fdd3860-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.2A
Pulsed drain current: 60A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
64+ 1.13 EUR
79+ 0.91 EUR
84+ 0.86 EUR
500+ 0.83 EUR
Mindestbestellmenge: 58
FDD3N40TM FDD3N40TM ONSEMI FAIRS46517-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD3N50NZTM FDD3N50NZTM ONSEMI FDD3N50NZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TIP42G TIP42G ONSEMI TIP42CG.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
FDD8445 FDD8445 ONSEMI FDD8445.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Gate charge: 7.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 70A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
63+ 1.14 EUR
77+ 0.93 EUR
81+ 0.89 EUR
500+ 0.84 EUR
Mindestbestellmenge: 57
FDD8451 FDD8451 ONSEMI FAIR-S-A0002365550-1.pdf?t.download=true&u=5oefqw fdd8451-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2296 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
80+ 0.9 EUR
99+ 0.73 EUR
105+ 0.69 EUR
500+ 0.67 EUR
Mindestbestellmenge: 55
FDD8453LZ FDD8453LZ ONSEMI fdd8453lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 65W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD86102LZ FDD86102LZ ONSEMI FDD86102LZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1657 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
46+ 1.56 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 41
FDD86110 ONSEMI fdd86110-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
FDD86250 FDD86250 ONSEMI fdd86250-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Pulsed drain current: 164A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
32+ 2.3 EUR
41+ 1.77 EUR
43+ 1.67 EUR
Mindestbestellmenge: 28
FDD86252 ONSEMI fdd86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Kind of package: reel; tape
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
FDD86367 FDD86367 ONSEMI fdd86367-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2004 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
35+ 2.1 EUR
43+ 1.69 EUR
45+ 1.6 EUR
500+ 1.54 EUR
Mindestbestellmenge: 31
FDD8647L FDD8647L ONSEMI FDD8647L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
57+ 1.26 EUR
75+ 0.96 EUR
79+ 0.92 EUR
Mindestbestellmenge: 45
FDD86540 FDD86540 ONSEMI fdd86540-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; Idm: 240A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Pulsed drain current: 240A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD86567-F085 FDD86567-F085 ONSEMI fdd86567_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
FDD8770 ONSEMI FAIR-S-A0002365726-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
FDD8796 ONSEMI FAIR-S-A0002366283-1.pdf?t.download=true&u=5oefqw FDD%2CFDU8796.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8870 FDD8870 ONSEMI FDD8870.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8878 FDD8878 ONSEMI FAIR-S-A0002366100-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8880 ONSEMI FAIR-S-A0002365606-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8896 FDD8896 ONSEMI FDD,FDU8896.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
73+ 0.99 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 61
FDD8N50NZTM FDD8N50NZTM ONSEMI fdd8n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
2N5401YTA 2N5401YTA ONSEMI 2N5401_Rev2.1_May2016.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...400MHz
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
740+0.099 EUR
820+ 0.089 EUR
1080+ 0.067 EUR
1140+ 0.064 EUR
Mindestbestellmenge: 740
BC32725TA BC32725TA ONSEMI BC327.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2967 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
249+ 0.29 EUR
527+ 0.14 EUR
962+ 0.074 EUR
1019+ 0.07 EUR
2000+ 0.067 EUR
Mindestbestellmenge: 173
BC327BU BC327BU ONSEMI BC327_Oct2014.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625/1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 40...630
Mounting: THT
Kind of package: bulk
Frequency: 260MHz
auf Bestellung 10805 Stücke:
Lieferzeit 14-21 Tag (e)
525+0.14 EUR
800+ 0.09 EUR
1035+ 0.069 EUR
1090+ 0.066 EUR
10000+ 0.063 EUR
Mindestbestellmenge: 525
1N4002G 1N4002G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
224+ 0.32 EUR
314+ 0.23 EUR
432+ 0.17 EUR
1150+ 0.062 EUR
1217+ 0.059 EUR
Mindestbestellmenge: 173
1N4002RLG 1N4002RLG ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
auf Bestellung 4966 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
234+ 0.31 EUR
327+ 0.22 EUR
451+ 0.16 EUR
1229+ 0.058 EUR
1303+ 0.055 EUR
Mindestbestellmenge: 179
RS1M RS1M ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
auf Bestellung 5830 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
247+ 0.29 EUR
414+ 0.17 EUR
516+ 0.14 EUR
727+ 0.098 EUR
769+ 0.093 EUR
Mindestbestellmenge: 173
NRVHPRS1MFA NRVHPRS1MFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
FDC6326L ONSEMI fdc6326l-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Output current: 1.8A
Number of channels: 1
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 3...20V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Produkt ist nicht verfügbar
FQI4N90TU ONSEMI ONSM-S-A0003584473-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Pulsed drain current: 16.8A
Power dissipation: 140W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
NGTB40N120FL3WG ONSEMI ngtb40n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
MOC3023SM MOC3023SM ONSEMI MOC3023SM-DTE.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
MOC3023SR2M MOC3023SR2M ONSEMI MOC3023SR2M.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Produkt ist nicht verfügbar
MOC3023SR2VM MOC3023SR2VM ONSEMI MOC3023SR2M.pdf MOC3023SR2VM.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
87+ 0.83 EUR
137+ 0.52 EUR
145+ 0.49 EUR
Mindestbestellmenge: 68
MOC3023TVM MOC3023TVM ONSEMI MOC3023TVM.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
81+ 0.88 EUR
129+ 0.56 EUR
136+ 0.53 EUR
Mindestbestellmenge: 63
1N5407RLG 1N5407RLG ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
198+ 0.36 EUR
397+ 0.18 EUR
421+ 0.17 EUR
500+ 0.16 EUR
Mindestbestellmenge: 152
FOD2742B FOD2742B ONSEMI FOD2742B.pdf description Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Mounting: THT
Collector-emitter voltage: 70V
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Case: SOIC8
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
62+ 1.16 EUR
71+ 1.01 EUR
75+ 0.96 EUR
100+ 0.92 EUR
Mindestbestellmenge: 40
FDC6331L FDC6331L ONSEMI FDC6331L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.1Ω
Kind of package: reel; tape
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
auf Bestellung 2231 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
91+ 0.79 EUR
120+ 0.6 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 46
UC3842BD1R2G UC3842BD1R2G ONSEMI UC2842-3B_UC3842-3B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 10...36V
auf Bestellung 1694 Stücke:
Lieferzeit 14-21 Tag (e)
130+0.55 EUR
148+ 0.48 EUR
194+ 0.37 EUR
205+ 0.35 EUR
Mindestbestellmenge: 130
UC3842BDR2G UC3842BDR2G ONSEMI UC2842-3B_UC3842-3B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 10...36V
auf Bestellung 2076 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
80+ 0.9 EUR
118+ 0.61 EUR
125+ 0.57 EUR
250+ 0.55 EUR
Mindestbestellmenge: 67
UC3842BNG UC3842BNG ONSEMI UC2842-3B_UC3842-3B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
Operating voltage: 10...36V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
UC3842BVD1R2G UC3842BVD1R2G ONSEMI UC2842-3B_UC3842-3B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 10...36V
Produkt ist nicht verfügbar
UC3842BVDR2G UC3842BVDR2G ONSEMI UC2842-3B_UC3842-3B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 10...36V
Produkt ist nicht verfügbar
TIP147G TIP147G ONSEMI TIP147G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
TIP147TU TIP147TU ONSEMI TIP147TU.pdf Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 80W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 80W
Case: TO3P
Mounting: THT
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
Mindestbestellmenge: 15
HCPL0600 HCPL0600 ONSEMI HCPL0600.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 50ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.29 EUR
21+ 3.55 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 14
BD13810STU BD13810STU ONSEMI BD136_138_140.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 60V
Current gain: 63...160
Collector current: 1.5A
Type of transistor: PNP
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
126+0.57 EUR
141+ 0.51 EUR
183+ 0.39 EUR
193+ 0.37 EUR
Mindestbestellmenge: 126
BD13816STU BD13816STU ONSEMI BD136_138_140.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 1.25W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BD137G BD137G ONSEMI BD137.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Case: TO225
Mounting: THT
Kind of package: bulk
Power dissipation: 12W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Collector current: 1.5A
Type of transistor: NPN
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
107+ 0.67 EUR
132+ 0.54 EUR
139+ 0.51 EUR
Mindestbestellmenge: 97
BD13716STU BD13716STU ONSEMI BD135_137_139.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.25W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 1.25W
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Type of transistor: NPN
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
83+ 0.87 EUR
101+ 0.71 EUR
131+ 0.55 EUR
139+ 0.52 EUR
250+ 0.51 EUR
500+ 0.5 EUR
Mindestbestellmenge: 75
MJ11016G MJ11016G ONSEMI MJ11015.PDF description Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.52 EUR
9+ 8.38 EUR
10+ 7.92 EUR
Mindestbestellmenge: 7
LM2931AD-5.0G LM2931AD-5.0G ONSEMI LM2931.PDF description Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±3.8%
Number of channels: 1
Input voltage: 6...26V
Manufacturer series: LM2931
Produkt ist nicht verfügbar
FDS9926A FDS9926A.pdf
FDS9926A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
110+0.65 EUR
123+ 0.58 EUR
158+ 0.45 EUR
167+ 0.43 EUR
Mindestbestellmenge: 110
FDD2572 FDD2572.pdf
FDD2572
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDMQ8205 FDMQ8205.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Case: WDFN12
Type of integrated circuit: driver
Produkt ist nicht verfügbar
FDD3672 FDD3672.pdf
FDD3672
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
39+1.86 EUR
43+ 1.69 EUR
57+ 1.26 EUR
61+ 1.19 EUR
Mindestbestellmenge: 39
FDD3682 FDD3682.pdf
FDD3682
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD306P FDD306P.pdf
FDD306P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
75+ 0.96 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 50
FDD3706 FDD%2CFDU3706.pdf ONSM-S-A0003586648-1.pdf?t.download=true&u=5oefqw
FDD3706
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 50A; Idm: 60A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 60A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD3860 fdd3860-d.pdf
FDD3860
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.2A
Pulsed drain current: 60A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
58+1.24 EUR
64+ 1.13 EUR
79+ 0.91 EUR
84+ 0.86 EUR
500+ 0.83 EUR
Mindestbestellmenge: 58
FDD3N40TM FAIRS46517-1.pdf?t.download=true&u=5oefqw
FDD3N40TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD3N50NZTM FDD3N50NZ.pdf
FDD3N50NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TIP42G TIP42CG.PDF
TIP42G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+10.21 EUR
Mindestbestellmenge: 7
FDD8445 FDD8445.pdf
FDD8445
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Gate charge: 7.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 70A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
57+1.27 EUR
63+ 1.14 EUR
77+ 0.93 EUR
81+ 0.89 EUR
500+ 0.84 EUR
Mindestbestellmenge: 57
FDD8451 FAIR-S-A0002365550-1.pdf?t.download=true&u=5oefqw fdd8451-d.pdf
FDD8451
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
80+ 0.9 EUR
99+ 0.73 EUR
105+ 0.69 EUR
500+ 0.67 EUR
Mindestbestellmenge: 55
FDD8453LZ fdd8453lz-d.pdf
FDD8453LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 65W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD86102LZ FDD86102LZ.pdf
FDD86102LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
46+ 1.56 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 41
FDD86110 fdd86110-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
FDD86250 fdd86250-d.pdf
FDD86250
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Pulsed drain current: 164A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
28+2.57 EUR
32+ 2.3 EUR
41+ 1.77 EUR
43+ 1.67 EUR
Mindestbestellmenge: 28
FDD86252 fdd86252-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Kind of package: reel; tape
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
FDD86367 fdd86367-d.pdf
FDD86367
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2004 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
31+2.33 EUR
35+ 2.1 EUR
43+ 1.69 EUR
45+ 1.6 EUR
500+ 1.54 EUR
Mindestbestellmenge: 31
FDD8647L FDD8647L.pdf
FDD8647L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
57+ 1.26 EUR
75+ 0.96 EUR
79+ 0.92 EUR
Mindestbestellmenge: 45
FDD86540 fdd86540-d.pdf
FDD86540
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; Idm: 240A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Pulsed drain current: 240A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD86567-F085 fdd86567_f085-d.pdf
FDD86567-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
FDD8770 FAIR-S-A0002365726-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
FDD8796 FAIR-S-A0002366283-1.pdf?t.download=true&u=5oefqw FDD%2CFDU8796.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8870 FDD8870.pdf
FDD8870
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8878 FAIR-S-A0002366100-1.pdf?t.download=true&u=5oefqw
FDD8878
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8880 FAIR-S-A0002365606-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDD8896 FDD,FDU8896.pdf
FDD8896
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
73+ 0.99 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 61
FDD8N50NZTM fdd8n50nz-d.pdf
FDD8N50NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
2N5401YTA 2N5401_Rev2.1_May2016.pdf
2N5401YTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...400MHz
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
740+0.099 EUR
820+ 0.089 EUR
1080+ 0.067 EUR
1140+ 0.064 EUR
Mindestbestellmenge: 740
BC32725TA BC327.pdf
BC32725TA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
249+ 0.29 EUR
527+ 0.14 EUR
962+ 0.074 EUR
1019+ 0.07 EUR
2000+ 0.067 EUR
Mindestbestellmenge: 173
BC327BU BC327_Oct2014.pdf
BC327BU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625/1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 40...630
Mounting: THT
Kind of package: bulk
Frequency: 260MHz
auf Bestellung 10805 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
525+0.14 EUR
800+ 0.09 EUR
1035+ 0.069 EUR
1090+ 0.066 EUR
10000+ 0.063 EUR
Mindestbestellmenge: 525
1N4002G 1N4001-D.PDF
1N4002G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
224+ 0.32 EUR
314+ 0.23 EUR
432+ 0.17 EUR
1150+ 0.062 EUR
1217+ 0.059 EUR
Mindestbestellmenge: 173
1N4002RLG 1N4001-D.PDF
1N4002RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
auf Bestellung 4966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
234+ 0.31 EUR
327+ 0.22 EUR
451+ 0.16 EUR
1229+ 0.058 EUR
1303+ 0.055 EUR
Mindestbestellmenge: 179
RS1M RS1x.pdf
RS1M
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
auf Bestellung 5830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
247+ 0.29 EUR
414+ 0.17 EUR
516+ 0.14 EUR
727+ 0.098 EUR
769+ 0.093 EUR
Mindestbestellmenge: 173
NRVHPRS1MFA rs1afa-d.pdf
NRVHPRS1MFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
FDC6326L fdc6326l-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Output current: 1.8A
Number of channels: 1
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 3...20V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Produkt ist nicht verfügbar
FQI4N90TU ONSM-S-A0003584473-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Pulsed drain current: 16.8A
Power dissipation: 140W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
NGTB40N120FL3WG ngtb40n120fl3w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
MOC3023SM MOC3023SM-DTE.pdf
MOC3023SM
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
MOC3023SR2M MOC3023SR2M.pdf
MOC3023SR2M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Produkt ist nicht verfügbar
MOC3023SR2VM MOC3023SR2M.pdf MOC3023SR2VM.pdf
MOC3023SR2VM
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
87+ 0.83 EUR
137+ 0.52 EUR
145+ 0.49 EUR
Mindestbestellmenge: 68
MOC3023TVM MOC3023TVM.pdf
MOC3023TVM
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
63+1.14 EUR
81+ 0.88 EUR
129+ 0.56 EUR
136+ 0.53 EUR
Mindestbestellmenge: 63
1N5407RLG 1N540x.PDF
1N5407RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
198+ 0.36 EUR
397+ 0.18 EUR
421+ 0.17 EUR
500+ 0.16 EUR
Mindestbestellmenge: 152
FOD2742B description FOD2742B.pdf
FOD2742B
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Mounting: THT
Collector-emitter voltage: 70V
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Case: SOIC8
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
40+1.8 EUR
62+ 1.16 EUR
71+ 1.01 EUR
75+ 0.96 EUR
100+ 0.92 EUR
Mindestbestellmenge: 40
FDC6331L FDC6331L.pdf
FDC6331L
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.1Ω
Kind of package: reel; tape
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
auf Bestellung 2231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
91+ 0.79 EUR
120+ 0.6 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 46
UC3842BD1R2G UC2842-3B_UC3842-3B.pdf
UC3842BD1R2G
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 10...36V
auf Bestellung 1694 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
130+0.55 EUR
148+ 0.48 EUR
194+ 0.37 EUR
205+ 0.35 EUR
Mindestbestellmenge: 130
UC3842BDR2G UC2842-3B_UC3842-3B.pdf
UC3842BDR2G
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 10...36V
auf Bestellung 2076 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
80+ 0.9 EUR
118+ 0.61 EUR
125+ 0.57 EUR
250+ 0.55 EUR
Mindestbestellmenge: 67
UC3842BNG UC2842-3B_UC3842-3B.pdf
UC3842BNG
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
Operating voltage: 10...36V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
Mindestbestellmenge: 3
UC3842BVD1R2G UC2842-3B_UC3842-3B.pdf
UC3842BVD1R2G
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 10...36V
Produkt ist nicht verfügbar
UC3842BVDR2G UC2842-3B_UC3842-3B.pdf
UC3842BVDR2G
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 10...36V
Produkt ist nicht verfügbar
TIP147G TIP147G.PDF
TIP147G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
TIP147TU TIP147TU.pdf
TIP147TU
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 80W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 80W
Case: TO3P
Mounting: THT
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.76 EUR
Mindestbestellmenge: 15
HCPL0600 HCPL0600.pdf
HCPL0600
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 50ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
14+5.29 EUR
21+ 3.55 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 14
BD13810STU BD136_138_140.pdf
BD13810STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 60V
Current gain: 63...160
Collector current: 1.5A
Type of transistor: PNP
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
126+0.57 EUR
141+ 0.51 EUR
183+ 0.39 EUR
193+ 0.37 EUR
Mindestbestellmenge: 126
BD13816STU BD136_138_140.pdf
BD13816STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 1.25W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
BD137G BD137.PDF
BD137G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Case: TO225
Mounting: THT
Kind of package: bulk
Power dissipation: 12W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Collector current: 1.5A
Type of transistor: NPN
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
97+0.74 EUR
107+ 0.67 EUR
132+ 0.54 EUR
139+ 0.51 EUR
Mindestbestellmenge: 97
BD13716STU BD135_137_139.PDF
BD13716STU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.25W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 1.25W
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Type of transistor: NPN
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
83+ 0.87 EUR
101+ 0.71 EUR
131+ 0.55 EUR
139+ 0.52 EUR
250+ 0.51 EUR
500+ 0.5 EUR
Mindestbestellmenge: 75
MJ11016G description MJ11015.PDF
MJ11016G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+10.52 EUR
9+ 8.38 EUR
10+ 7.92 EUR
Mindestbestellmenge: 7
LM2931AD-5.0G description LM2931.PDF
LM2931AD-5.0G
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±3.8%
Number of channels: 1
Input voltage: 6...26V
Manufacturer series: LM2931
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 232 464 696 928 1160 1392 1624 1856 2088 2216 2217 2218 2219 2220 2221 2222 2223 2224 2225 2226 2320 2329  [ Nächste Seite >> ]