| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MOC3061M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3061SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; zero voltage crossing driver; Gull wing 6 Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: zero voltage crossing driver Case: Gull wing 6 Mounting: SMD Number of channels: 1 Manufacturer series: MOC3061M Slew rate: 1.5kV/μs |
auf Bestellung 217 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV103 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD80 Max. forward voltage: 1.25V Max. load current: 0.6A Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 2385 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC74DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered |
auf Bestellung 229 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC74DR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; reel,tape; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: TTL Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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MC74AC74DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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| LM2575D2T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
Produkt ist nicht verfügbar |
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| LM2575D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: inverting Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: SO8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: reel; tape Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP |
Produkt ist nicht verfügbar |
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MC74HC174ADR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; SO16; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 6 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SO16 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
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MC74HC174ADTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; TSSOP16; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 6 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
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| BLDC-GEVK | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: LV8907UWR2G Interface: I2C; I2C - Slave; SPI Type of accessories for development kits: expansion board Components: LV8907UWR2G development kits accessories features: Arduino Shield compatible; brushless DC motor driver Kind of connector: pin strips; screw Kit contents: prototype board |
Produkt ist nicht verfügbar |
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BAV99LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; 225mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Max. load current: 0.45A Power dissipation: 0.225W Kind of package: reel; tape |
auf Bestellung 5679 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAV99LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 3019 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCD7N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB7N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; Idm: 29.6A; 142W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 142W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCA47N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCA47N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH47N60-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: THT Gate charge: 187nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH47N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 66mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH47N60N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 368W Case: TO247 Gate-source voltage: ±30V On-state resistance: 51.5Ω Mounting: THT Gate charge: 115nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH47N60NF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28.9A Pulsed drain current: 137.4A Power dissipation: 368W Case: TO247 Gate-source voltage: ±30V On-state resistance: 57.5mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQPF7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.7A Pulsed drain current: 17.2A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BUT11AFTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 5A; 40W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 40W Case: TO220FP Mounting: THT Kind of package: tube |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX79C5V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; bulk; DO35; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA1013YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92L Mounting: THT Case: TO92L Kind of package: Ammo Pack Frequency: 50MHz Collector-emitter voltage: 160V Current gain: 160...320 Collector current: 1A Type of transistor: PNP Power dissipation: 0.9W Polarisation: bipolar |
auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
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| BB-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Kind of connector: pin strips; Pmod socket x2; power supply; USB Components: FT232BL; NCS36510 Type of development kit: evaluation |
Produkt ist nicht verfügbar |
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1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 200V; 1.9mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Zener current: 1.9mA Mounting: SMD Tolerance: ±5% Zener resistance: 1.2kΩ Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 4720 Stücke: Lieferzeit 14-21 Tag (e) |
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MC100EP05DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube Operating temperature: -40...85°C Kind of package: tube Type of integrated circuit: digital Number of channels: single; 1 Kind of gate: AND; multiple-function; NAND Mounting: SMD Case: SO8 Number of inputs: 4 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP05DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: single; 1 Kind of gate: AND; multiple-function; NAND Mounting: SMD Case: TSSOP8 Number of inputs: 4 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP11DR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8 Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential; fanout buffer Mounting: SMD Case: SO8 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP11DTR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential; fanout buffer Mounting: SMD Case: TSSOP8 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP16MNR4G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential; driver; receiver Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP195FAG | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz Mounting: SMD Case: LQFP32 Operating temperature: -40...85°C Kind of integrated circuit: PDC Supply voltage: 3.3V DC Frequency: 1.2GHz Type of integrated circuit: digital Kind of output: ECL |
Produkt ist nicht verfügbar |
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MC100EP32MNR4G | ONSEMI |
Category: Counters/dividers Description: IC: digital; divided by 2; Ch: 1; SMD; DFN8; 3÷5.5VDC; reel,tape Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: divided by 2 Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP52DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; tube; OUT: ECL Operating temperature: -40...85°C Kind of package: tube Type of integrated circuit: digital Number of channels: 1 Kind of output: ECL Trigger: positive-edge-triggered Kind of integrated circuit: D flip-flop Mounting: SMD Case: SO8 Supply voltage: 3...5.5V DC |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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MC100EP52DTG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL Operating temperature: -40...85°C Kind of package: tube Type of integrated circuit: digital Number of channels: 1 Kind of output: ECL Trigger: positive-edge-triggered Kind of integrated circuit: D flip-flop Mounting: SMD Case: TSSOP8 Supply voltage: 3.3...5V DC |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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MC100EP56DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 2; SMD; TSSOP20; 3÷5.5VDC; reel,tape Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 2 Kind of integrated circuit: multiplexer Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP90DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; 3÷5.5VDC; SMD Operating temperature: -40...85°C Manufacturer series: 100EP Kind of package: tube Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Case: TSSOP20 Number of inputs: 6 Number of outputs: 6 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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MC100EP91DWG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC Operating temperature: -40...85°C Manufacturer series: 100EP Kind of package: tube Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Case: SO20 Number of inputs: 6 Number of outputs: 6 Supply voltage: 2.37...3.8V DC |
Produkt ist nicht verfügbar |
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| MC100EP91MNG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC Operating temperature: -40...85°C Manufacturer series: 100EP Kind of package: tube Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Case: QFN24 Number of inputs: 6 Number of outputs: 6 Supply voltage: 2.37...3.8V DC |
Produkt ist nicht verfügbar |
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MC100EPT20DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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MC100EPT20DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 3÷3.6VDC; SMD Mounting: SMD Operating temperature: -40...85°C Manufacturer series: 100EPT Supply voltage: 3...3.6V DC Number of outputs: 1 Kind of package: tube Number of inputs: 2 Case: TSSOP8 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital Number of channels: 1 |
Produkt ist nicht verfügbar |
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MC100EPT21DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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MC100EPT21DR2G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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MC100EPT21DTG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1 Operating temperature: -40...85°C Manufacturer series: 100EPT Kind of package: tube Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: TSSOP8 Number of inputs: 2 Number of outputs: 1 Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
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MC100EPT21DTR2G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2 Operating temperature: -40...85°C Manufacturer series: 100EPT Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: TSSOP8 Number of inputs: 2 Number of outputs: 1 Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
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BC546ABU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 300MHz |
auf Bestellung 2721 Stücke: Lieferzeit 14-21 Tag (e) |
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BC546BTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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BC546BTF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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BC546CTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
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FDD850N10L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Drain-source voltage: 100V Drain current: 11.1A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Case: DPAK |
auf Bestellung 2427 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBFJ177LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 20mA; 0.225W; SOT23 Gate-source voltage: 25V Mounting: SMD Case: SOT23 Drain current: 20mA On-state resistance: 300Ω Type of transistor: P-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MJL21194G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISL9V3040S3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 17A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: ignition systems |
Produkt ist nicht verfügbar |
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KSD1692YS | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 1.3W; TO126ISO Mounting: THT Type of transistor: NPN Collector current: 3A Power dissipation: 1.3W Polarisation: bipolar Kind of package: tube Collector-emitter voltage: 100V Case: TO126ISO Kind of transistor: Darlington |
Produkt ist nicht verfügbar |
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1N5818G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: CASE59 Max. forward impulse current: 25A Max. forward voltage: 0.875V |
Produkt ist nicht verfügbar |
| MOC3061M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.19 EUR |
| 68+ | 1.06 EUR |
| MOC3061SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; Gull wing 6
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; Gull wing 6
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.26 EUR |
| 63+ | 1.14 EUR |
| 75+ | 0.96 EUR |
| 79+ | 0.92 EUR |
| BAV103 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD80
Max. forward voltage: 1.25V
Max. load current: 0.6A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD80
Max. forward voltage: 1.25V
Max. load current: 0.6A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.27 EUR |
| 374+ | 0.19 EUR |
| 593+ | 0.12 EUR |
| 730+ | 0.098 EUR |
| 1097+ | 0.065 EUR |
| 1161+ | 0.062 EUR |
| MC74AC74DG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 91+ | 0.79 EUR |
| 122+ | 0.59 EUR |
| 186+ | 0.39 EUR |
| 197+ | 0.36 EUR |
| MC74AC74DR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Produkt ist nicht verfügbar
| MC74AC74DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Produkt ist nicht verfügbar
| LM2575D2T-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Produkt ist nicht verfügbar
| LM2575D2T-ADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MC33151DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| MC33153DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
| MC74HC174ADR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
| MC74HC174ADTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.46 EUR |
| 67+ | 1.07 EUR |
| 89+ | 0.81 EUR |
| 94+ | 0.76 EUR |
| 500+ | 0.74 EUR |
| BLDC-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LV8907UWR2G
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
Components: LV8907UWR2G
development kits accessories features: Arduino Shield compatible; brushless DC motor driver
Kind of connector: pin strips; screw
Kit contents: prototype board
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LV8907UWR2G
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
Components: LV8907UWR2G
development kits accessories features: Arduino Shield compatible; brushless DC motor driver
Kind of connector: pin strips; screw
Kit contents: prototype board
Produkt ist nicht verfügbar
| BAV99LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; 225mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Max. load current: 0.45A
Power dissipation: 0.225W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; 225mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Max. load current: 0.45A
Power dissipation: 0.225W
Kind of package: reel; tape
auf Bestellung 5679 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 646+ | 0.11 EUR |
| 1000+ | 0.072 EUR |
| 1786+ | 0.04 EUR |
| 2500+ | 0.029 EUR |
| 3907+ | 0.018 EUR |
| 4133+ | 0.017 EUR |
| SBAV99LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 3019 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 417+ | 0.17 EUR |
| 596+ | 0.12 EUR |
| 878+ | 0.082 EUR |
| 1038+ | 0.069 EUR |
| 1104+ | 0.065 EUR |
| FCD7N60TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB7N60TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; Idm: 29.6A; 142W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 142W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; Idm: 29.6A; 142W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 142W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCA47N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCA47N60-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH47N60-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 187nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 187nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH47N60-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH47N60F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH47N60N |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 51.5Ω
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 51.5Ω
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH47N60NF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28.9A
Pulsed drain current: 137.4A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 57.5mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28.9A
Pulsed drain current: 137.4A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 57.5mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQPF7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.7A
Pulsed drain current: 17.2A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.7A
Pulsed drain current: 17.2A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BUT11AFTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Mounting: THT
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.4 EUR |
| 32+ | 2.23 EUR |
| BZX79C5V6 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; DO35; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; DO35; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1300+ | 0.056 EUR |
| 2140+ | 0.034 EUR |
| 2420+ | 0.03 EUR |
| 2600+ | 0.027 EUR |
| KSA1013YTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92L
Mounting: THT
Case: TO92L
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 160V
Current gain: 160...320
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92L
Mounting: THT
Case: TO92L
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 160V
Current gain: 160...320
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 252+ | 0.28 EUR |
| 272+ | 0.26 EUR |
| 325+ | 0.22 EUR |
| 343+ | 0.21 EUR |
| BB-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Kind of connector: pin strips; Pmod socket x2; power supply; USB
Components: FT232BL; NCS36510
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Kind of connector: pin strips; Pmod socket x2; power supply; USB
Components: FT232BL; NCS36510
Type of development kit: evaluation
Produkt ist nicht verfügbar
| 1SMB5956BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; 1.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Zener current: 1.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 1.2kΩ
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; 1.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Zener current: 1.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 1.2kΩ
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 4720 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 204+ | 0.35 EUR |
| 252+ | 0.28 EUR |
| 338+ | 0.21 EUR |
| 491+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| MC100EP05DG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: SO8
Number of inputs: 4
Supply voltage: 3...5.5V DC
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: SO8
Number of inputs: 4
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP05DTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: TSSOP8
Number of inputs: 4
Supply voltage: 3...5.5V DC
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: TSSOP8
Number of inputs: 4
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP11DR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP11DTR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: TSSOP8
Supply voltage: 3...5.5V DC
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: TSSOP8
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP16MNR4G |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; driver; receiver
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; driver; receiver
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP195FAG |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of integrated circuit: PDC
Supply voltage: 3.3V DC
Frequency: 1.2GHz
Type of integrated circuit: digital
Kind of output: ECL
Category: Other logic integrated circuits
Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of integrated circuit: PDC
Supply voltage: 3.3V DC
Frequency: 1.2GHz
Type of integrated circuit: digital
Kind of output: ECL
Produkt ist nicht verfügbar
| MC100EP32MNR4G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divided by 2; Ch: 1; SMD; DFN8; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: divided by 2
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Counters/dividers
Description: IC: digital; divided by 2; Ch: 1; SMD; DFN8; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: divided by 2
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP52DG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 12.58 EUR |
| 7+ | 10.28 EUR |
| 8+ | 9.72 EUR |
| MC100EP52DTG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: TSSOP8
Supply voltage: 3.3...5V DC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: TSSOP8
Supply voltage: 3.3...5V DC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 11.54 EUR |
| 8+ | 9.4 EUR |
| 9+ | 8.88 EUR |
| MC100EP56DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; SMD; TSSOP20; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; SMD; TSSOP20; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP90DTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: TSSOP20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 3...5.5V DC
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: TSSOP20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| MC100EP91DWG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: SO20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: SO20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
Produkt ist nicht verfügbar
| MC100EP91MNG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
Produkt ist nicht verfügbar
| MC100EPT20DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| MC100EPT20DTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 3÷3.6VDC; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Supply voltage: 3...3.6V DC
Number of outputs: 1
Kind of package: tube
Number of inputs: 2
Case: TSSOP8
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Number of channels: 1
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 3÷3.6VDC; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Supply voltage: 3...3.6V DC
Number of outputs: 1
Kind of package: tube
Number of inputs: 2
Case: TSSOP8
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Number of channels: 1
Produkt ist nicht verfügbar
| MC100EPT21DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| MC100EPT21DR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| MC100EPT21DTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| MC100EPT21DTR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| BC546ABU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 2721 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 264+ | 0.27 EUR |
| 422+ | 0.17 EUR |
| 526+ | 0.14 EUR |
| 921+ | 0.078 EUR |
| 975+ | 0.073 EUR |
| 1013+ | 0.071 EUR |
| BC546BTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 190+ | 0.37 EUR |
| BC546BTF |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 274+ | 0.26 EUR |
| 567+ | 0.13 EUR |
| 1185+ | 0.06 EUR |
| 1254+ | 0.057 EUR |
| BC546CTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Produkt ist nicht verfügbar
| FDD850N10L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
auf Bestellung 2427 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.4 EUR |
| 67+ | 1.07 EUR |
| 87+ | 0.83 EUR |
| 91+ | 0.79 EUR |
| MMBFJ177LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 20mA; 0.225W; SOT23
Gate-source voltage: 25V
Mounting: SMD
Case: SOT23
Drain current: 20mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 20mA; 0.225W; SOT23
Gate-source voltage: 25V
Mounting: SMD
Case: SOT23
Drain current: 20mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MJL21194G | |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.79 EUR |
| 16+ | 4.72 EUR |
| 17+ | 4.46 EUR |
| ISL9V3040S3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Produkt ist nicht verfügbar
| KSD1692YS |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 1.3W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector current: 3A
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: tube
Collector-emitter voltage: 100V
Case: TO126ISO
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 1.3W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector current: 3A
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: tube
Collector-emitter voltage: 100V
Case: TO126ISO
Kind of transistor: Darlington
Produkt ist nicht verfügbar
| 1N5818G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward impulse current: 25A
Max. forward voltage: 0.875V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward impulse current: 25A
Max. forward voltage: 0.875V
Produkt ist nicht verfügbar