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FDD3706

FDD3706 Fairchild Semiconductor

ONSM-S-A0003586648-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+0.97 EUR
Mindestbestellmenge: 500
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Technische Details FDD3706 Fairchild Semiconductor

Description: MOSFET N-CH 20V 14.7A/50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V, Power Dissipation (Max): 3.8W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V.

Weitere Produktangebote FDD3706 nach Preis ab 2.98 EUR bis 2.98 EUR

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FDD3706 FDD3706 Hersteller : ON Semiconductor / Fairchild FDD3706-D-1807050.pdf MOSFET 20V N-Ch PowerTrench
auf Bestellung 3513 Stücke:
Lieferzeit 10-14 Tag (e)
FDD3706 Hersteller : ON-Semicoductor FDD%2CFDU3706.pdf ONSM-S-A0003586648-1.pdf?t.download=true&u=5oefqw N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount D-PAK (TO-) FDD3706 ON Semiconductor TFDD3706
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+2.98 EUR
Mindestbestellmenge: 10
FDD3706 FDD3706 Hersteller : ON Semiconductor 3661658772335857fdd3706.pdf Trans MOSFET N-CH 20V 14.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FDD3706 Hersteller : ON Semiconductor 3661658772335857fdd3706.pdf Trans MOSFET N-CH 20V 14.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FDD3706 FDD3706 Hersteller : onsemi FDD%2CFDU3706.pdf Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Produkt ist nicht verfügbar
FDD3706 FDD3706 Hersteller : onsemi FDD%2CFDU3706.pdf Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Produkt ist nicht verfügbar
FDD3706 FDD3706 Hersteller : ONSEMI FDD%2CFDU3706.pdf ONSM-S-A0003586648-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 50A; Idm: 60A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 60A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar