Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140810) > Seite 2337 nach 2347
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BFR380L3E6327 | INFINEON TECHNOLOGIES |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 80mA Power dissipation: 0.38W Case: TSLP-3-1 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz |
auf Bestellung 12501 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI60R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced |
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IPI65R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced |
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IPP60R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRF3708PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 87W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 62A Power dissipation: 87W Case: TO220AB Gate-source voltage: ±12V On-state resistance: 12mΩ Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
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IPP200N25N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 64A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB025N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced |
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IRFHM8326TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3 Mounting: SMD Kind of package: reel Case: PQFN3.3X3.3 Power dissipation: 2.8W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 19A Drain-source voltage: 30V Technology: HEXFET® Kind of channel: enhanced |
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IRFHM6342TR2PBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Power dissipation: 2.1W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 8.5A Drain-source voltage: 30V Features of semiconductor devices: logic level Gate charge: 11nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 15.5mΩ |
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BSP296L6327 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.1A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of channel: enhanced |
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| IR11672ASTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver Output current: -7...2A Power: 625mW Supply voltage: 11.4...18V DC Case: SO8 Mounting: SMD Operating temperature: -40...125°C Application: SMPS Kind of package: reel; tape Topology: flyback; push-pull; resonant LLC Voltage class: 200V |
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| BFR740L3RHE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4V Collector current: 40mA Power dissipation: 0.16W Case: TSLP-3-9 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
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BFP405E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.5V Collector current: 12mA Power dissipation: 75mW Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 25GHz |
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BSP75N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.5Ω Technology: HITFET® Power dissipation: 1.8W |
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BSC040N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 104W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced |
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BSC052N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 95A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Kind of channel: enhanced |
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BSC061N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 74W On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Drain current: 82A Drain-source voltage: 80V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar |
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BSC072N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhanced |
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TD122N22KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 122A Max. load current: 220A Case: BG-PB34-1 Max. forward voltage: 1.95V Max. forward impulse current: 3.3kA Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw |
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| BCR112E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
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IRFR4104PBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 59nC Kind of channel: enhanced |
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| IPN60R3K4CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.6A Pulsed drain current: 3.9A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Kind of channel: enhanced |
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IPP60R060P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IGP40N65F5 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 74A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
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| IAUC24N10S5L300ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Pulsed drain current: 96A Power dissipation: 38W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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IDW24G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12Ax2; 152W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A x2 Power dissipation: 152W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 56A Max. forward voltage: 1.8V Leakage current: 2.4µA |
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IDW32G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A x2 Power dissipation: 188W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 74A Max. forward voltage: 1.8V Leakage current: 3.2µA |
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IDW40G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Power dissipation: 112W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 87A Max. forward voltage: 1.8V Leakage current: 4.1µA |
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1EDI05I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Output current: -0.5...0.5A Mounting: SMD Supply voltage: 3.1...17V; 13...35V Number of channels: 1 Integrated circuit features: galvanically isolated Case: PG-DSO-8 Kind of package: reel; tape Topology: single transistor Voltage class: 1.2kV |
auf Bestellung 2158 Stücke: Lieferzeit 14-21 Tag (e) |
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1EDI10I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Output current: -1...1A Type of integrated circuit: driver Number of channels: 1 |
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1EDI40I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -4...4A Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDI60I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -6...6A Number of channels: 1 Supply voltage: 3.1...17V; 13...35V Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 1.2kV |
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| IAUA250N04S6N005AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 57A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 169nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1350A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N007EAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1.3kA Power dissipation: 192W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N008AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Pulsed drain current: 1100A Power dissipation: 172W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 960µΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced |
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IPW80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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BSF035NE2LQXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W Technology: OptiMOS™ Case: CanPAK™ SQ; MG-WDSON-2 Mounting: SMD On-state resistance: 3.5mΩ Power dissipation: 28W Drain-source voltage: 25V Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Type of transistor: N-MOSFET Drain current: 69A |
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| DZ950N44K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 4.4kV; If: 950A; BG-PB70-1; Ifsm: 35kA Case: BG-PB70-1 Semiconductor structure: single diode Max. off-state voltage: 4.4kV Electrical mounting: screw Mechanical mounting: screw Max. forward impulse current: 35kA Type of module: diode Load current: 950A Max. forward voltage: 0.85V |
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IPL65R130C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4 Mounting: SMD Case: PG-VSON-4 Power dissipation: 102W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 15A On-state resistance: 0.13Ω Type of transistor: N-MOSFET |
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BTS3142DATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 28mΩ Technology: HITFET® Output voltage: 42V Power dissipation: 59W |
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BSZ040N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 3354 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR112 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
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BAS7004WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Case: SOT323 Max. forward impulse current: 0.1A Power dissipation: 0.25W |
auf Bestellung 1235 Stücke: Lieferzeit 14-21 Tag (e) |
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TLS115B0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Input voltage: 4...45V |
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TLS115D0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Input voltage: 4...45V |
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BCR430U | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: PG-SOT23-6 Output current: 20...100mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 6...42V |
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| IPL60R650P6SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Power dissipation: 56.8W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Kind of channel: enhanced |
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IRFR4620PBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 144W Case: DPAK Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IPDD60R190G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A Mounting: SMD Case: PG-HDSOP-10-1 Drain-source voltage: 600V Drain current: 13A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 76W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A |
Produkt ist nicht verfügbar |
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TT430N22KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 430A; BG-PB60AT-1; screw Mechanical mounting: screw Max. forward impulse current: 14kA Gate current: 250mA Semiconductor structure: double series Load current: 430A Max. forward voltage: 1.78V Max. off-state voltage: 2.2kV Electrical mounting: FASTON connectors; screw Type of module: thyristor Case: BG-PB60AT-1 |
Produkt ist nicht verfügbar |
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| IDK08G120C5XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; PG-TO263-2; 126W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 2.25V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 14µA Max. forward impulse current: 60A Power dissipation: 126W |
Produkt ist nicht verfügbar |
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IPI65R420CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3 Technology: CoolMOS™ Case: PG-TO262-3 Mounting: THT On-state resistance: 0.42Ω Power dissipation: 83.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 8.7A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IPP65R420CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.7A Power dissipation: 83.3W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| AIDW12S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3 Case: TO247-3 Mounting: THT Power dissipation: 76W Application: automotive industry Type of diode: Schottky rectifying Max. forward impulse current: 71A Semiconductor structure: single diode Load current: 12A Max. off-state voltage: 650V Technology: CoolSiC™ 5G; SiC |
Produkt ist nicht verfügbar |
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| T720N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA Case: BG-T7526K-1 Mounting: Press-Pack Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 1.65kA Load current: 720A Gate current: 250mA Max. forward impulse current: 12.5kA |
Produkt ist nicht verfügbar |
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BFP520H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 2.5V Collector current: 40mA Power dissipation: 0.1W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 45GHz |
Produkt ist nicht verfügbar |
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IRFS7734TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 290W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPB037N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| BFR380L3E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
auf Bestellung 12501 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 379+ | 0.19 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 2500+ | 0.097 EUR |
| IPI60R380C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPI65R380C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP60R380C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF3708PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 87W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 87W
Case: TO220AB
Gate-source voltage: ±12V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 87W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 87W
Case: TO220AB
Gate-source voltage: ±12V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP200N25N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB025N08N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFHM8326TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 19A
Drain-source voltage: 30V
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 19A
Drain-source voltage: 30V
Technology: HEXFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFHM6342TR2PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
Produkt ist nicht verfügbar
| BSP296L6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IR11672ASTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Produkt ist nicht verfügbar
| BFR740L3RHE6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Produkt ist nicht verfügbar
| BFP405E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
| BSP75N |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Technology: HITFET®
Power dissipation: 1.8W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Technology: HITFET®
Power dissipation: 1.8W
Produkt ist nicht verfügbar
| BSC040N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC052N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC061N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 74W
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 82A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 74W
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 82A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
| BSC072N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TD122N22KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Max. load current: 220A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Max. load current: 220A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| BCR112E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
| IRFR4104PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPN60R3K4CEATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.6A
Pulsed drain current: 3.9A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.6A
Pulsed drain current: 3.9A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP60R060P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IGP40N65F5 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Produkt ist nicht verfügbar
| IAUC24N10S5L300ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IDW24G65C5BXKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12Ax2; 152W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A x2
Power dissipation: 152W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 56A
Max. forward voltage: 1.8V
Leakage current: 2.4µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12Ax2; 152W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A x2
Power dissipation: 152W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 56A
Max. forward voltage: 1.8V
Leakage current: 2.4µA
Produkt ist nicht verfügbar
| IDW32G65C5BXKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A x2
Power dissipation: 188W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 74A
Max. forward voltage: 1.8V
Leakage current: 3.2µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A x2
Power dissipation: 188W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 74A
Max. forward voltage: 1.8V
Leakage current: 3.2µA
Produkt ist nicht verfügbar
| IDW40G65C5BXKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 87A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 87A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
Produkt ist nicht verfügbar
| 1EDI05I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Output current: -0.5...0.5A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Integrated circuit features: galvanically isolated
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Voltage class: 1.2kV
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Output current: -0.5...0.5A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Integrated circuit features: galvanically isolated
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Voltage class: 1.2kV
auf Bestellung 2158 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.96 EUR |
| 41+ | 1.74 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.3 EUR |
| 250+ | 1.26 EUR |
| 1EDI10I12MFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 1
Produkt ist nicht verfügbar
| 1EDI40I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
| 1EDI60I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Produkt ist nicht verfügbar
| IAUA250N04S6N005AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA250N04S6N006AUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA250N04S6N007AUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA250N04S6N007EAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA250N04S6N008AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPW80R360P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| BSF035NE2LQXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Technology: OptiMOS™
Case: CanPAK™ SQ; MG-WDSON-2
Mounting: SMD
On-state resistance: 3.5mΩ
Power dissipation: 28W
Drain-source voltage: 25V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET
Drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Technology: OptiMOS™
Case: CanPAK™ SQ; MG-WDSON-2
Mounting: SMD
On-state resistance: 3.5mΩ
Power dissipation: 28W
Drain-source voltage: 25V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET
Drain current: 69A
Produkt ist nicht verfügbar
| DZ950N44K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 4.4kV; If: 950A; BG-PB70-1; Ifsm: 35kA
Case: BG-PB70-1
Semiconductor structure: single diode
Max. off-state voltage: 4.4kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 35kA
Type of module: diode
Load current: 950A
Max. forward voltage: 0.85V
Category: Diode modules
Description: Module: diode; single diode; 4.4kV; If: 950A; BG-PB70-1; Ifsm: 35kA
Case: BG-PB70-1
Semiconductor structure: single diode
Max. off-state voltage: 4.4kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 35kA
Type of module: diode
Load current: 950A
Max. forward voltage: 0.85V
Produkt ist nicht verfügbar
| IPL65R130C7AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 102W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 15A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 102W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 15A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BTS3142DATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 28mΩ
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 28mΩ
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
Produkt ist nicht verfügbar
| BSZ040N04LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 3354 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.52 EUR |
| 57+ | 1.26 EUR |
| 93+ | 0.78 EUR |
| 98+ | 0.74 EUR |
| 100+ | 0.73 EUR |
| 1000+ | 0.72 EUR |
| BCR112 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
| BAS7004WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
auf Bestellung 1235 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 298+ | 0.24 EUR |
| 449+ | 0.16 EUR |
| 969+ | 0.074 EUR |
| 1025+ | 0.07 EUR |
| TLS115B0LDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Produkt ist nicht verfügbar
| TLS115D0LDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Produkt ist nicht verfügbar
| BCR430U |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
Produkt ist nicht verfügbar
| IPL60R650P6SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR4620PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPDD60R190G7XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Mounting: SMD
Case: PG-HDSOP-10-1
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 76W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Mounting: SMD
Case: PG-HDSOP-10-1
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 76W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Produkt ist nicht verfügbar
| TT430N22KOFHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 430A; BG-PB60AT-1; screw
Mechanical mounting: screw
Max. forward impulse current: 14kA
Gate current: 250mA
Semiconductor structure: double series
Load current: 430A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Type of module: thyristor
Case: BG-PB60AT-1
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 430A; BG-PB60AT-1; screw
Mechanical mounting: screw
Max. forward impulse current: 14kA
Gate current: 250mA
Semiconductor structure: double series
Load current: 430A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Type of module: thyristor
Case: BG-PB60AT-1
Produkt ist nicht verfügbar
| IDK08G120C5XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; PG-TO263-2; 126W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 60A
Power dissipation: 126W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; PG-TO263-2; 126W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 60A
Power dissipation: 126W
Produkt ist nicht verfügbar
| IPI65R420CFDXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPP65R420CFDXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AIDW12S65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 76W
Application: automotive industry
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
Semiconductor structure: single diode
Load current: 12A
Max. off-state voltage: 650V
Technology: CoolSiC™ 5G; SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 76W
Application: automotive industry
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
Semiconductor structure: single diode
Load current: 12A
Max. off-state voltage: 650V
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
| T720N16TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
Produkt ist nicht verfügbar
| BFP520H6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Produkt ist nicht verfügbar
| IRFS7734TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB037N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar