Technische Details IRFR4104PBF IR
Description: MOSFET N-CH 40V 42A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V.
Weitere Produktangebote IRFR4104PBF nach Preis ab 1.1 EUR bis 1.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
IRFR4104 Produktcode: 99505 |
Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: D-Pak Uds,V: 40 Idd,A: 42 Rds(on), Ohm: 5.5 mOhm Ciss, pF/Qg, nC: 2950/59 JHGF: SMD |
Produkt ist nicht verfügbar
|
|
||||
 |
IRFR4104PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 42A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||
 |
IRFR4104PBF | Hersteller : Infineon Technologies |
MOSFETs 40V 1 N-CH HEXFET 5.5mOhms 59nC |
Produkt ist nicht verfügbar |
|||||
 |
IRFR4104PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 59nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |