IRFHM8326TRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 25A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
auf Bestellung 3490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 0.97 EUR |
| 21+ | 0.85 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFHM8326TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 25A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.8W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 50µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V.
Weitere Produktangebote IRFHM8326TRPBF nach Preis ab 0.36 EUR bis 0.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFHM8326TRPBF | Hersteller : Infineon Technologies |
MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY |
auf Bestellung 2890 Stücke: Lieferzeit 94-98 Tag (e) |
|
||||||||||||||||
 |
IRFHM8326TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 19A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IRFHM8326TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 19A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IRFHM8326TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 19A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IRFHM8326TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3 Mounting: SMD Kind of package: reel Case: PQFN3.3X3.3 Power dissipation: 2.8W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 19A Drain-source voltage: 30V Technology: HEXFET® Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IRFHM8326TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 25A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IRFHM8326TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3 Mounting: SMD Kind of package: reel Case: PQFN3.3X3.3 Power dissipation: 2.8W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 19A Drain-source voltage: 30V Technology: HEXFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |