IRF3708PBF

IRF3708PBF Infineon Technologies


infineon-irf3708-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube
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Technische Details IRF3708PBF Infineon Technologies

Description: MOSFET N-CH 30V 62A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V.

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IRF3708PBF IRF3708PBF Hersteller : Infineon Technologies irf3708pbf.pdf?fileId=5546d462533600a4015355df7cf5193c Description: MOSFET N-CH 30V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
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IRF3708PBF IRF3708PBF Hersteller : Infineon Technologies Infineon_IRF3708_DataSheet_v01_01_EN-3165976.pdf MOSFETs MOSFT 30V 62A 12mOhm 24nC
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IRF3708PBF IRF3708PBF Hersteller : INFINEON TECHNOLOGIES irf3708.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 87W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 87W
Case: TO220AB
Gate-source voltage: ±12V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
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