Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140580) > Seite 2339 nach 2343
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| S29AL008J70BFI013 | INFINEON TECHNOLOGIES |
 Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Interface: CFI; parallel Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: VFBGA48 |
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| S29AL008J70BFI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Interface: CFI; parallel Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: VFBGA48 |
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| S29AL008J70BFI022 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Interface: CFI; parallel Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: VFBGA48 |
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| S29AL008J70BFI023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Interface: CFI; parallel Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: VFBGA48 |
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| S29AL008J70BFM023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Interface: CFI; parallel Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: VFBGA48 |
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| S29AL008J70BFN010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Interface: CFI; parallel Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: VFBGA48 |
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| S29AL008J70BFN020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Interface: CFI; parallel Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: VFBGA48 |
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| S29AL008J70TFI013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Interface: CFI; parallel Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: TSOP48 |
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| S29AL008J70TFI023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Interface: CFI; parallel Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: TSOP48 |
Produkt ist nicht verfügbar |
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| S29AL008J70TFN010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Interface: CFI; parallel Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: TSOP48 |
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| S29AL008J70TFN020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Interface: CFI; parallel Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: TSOP48 |
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IPB019N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD30P06PGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -30A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 1962 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT1804E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V Kind of package: reel; tape Semiconductor structure: double series Type of diode: switching Features of semiconductor devices: PIN; RF Mounting: SMD Case: SOT23 Max. off-state voltage: 35V Max. forward voltage: 1.2V Load current: 0.1A |
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BSC010N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PG-TDSON-8 FL On-state resistance: 1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced |
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ITS428L2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Output current: 5.8A Case: TO252-5 Mounting: SMD Number of channels: 1 On-state resistance: 50mΩ Supply voltage: 4.75...43V DC Technology: Industrial PROFET Kind of integrated circuit: high-side Kind of output: N-Channel |
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DZ540N22K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: BG-PB501-1 Max. off-state voltage: 2.2kV Max. forward voltage: 0.78V Load current: 540A Semiconductor structure: single diode Max. forward impulse current: 16.5kA |
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IKCM15L60GDXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -15...15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Voltage class: 600V Power dissipation: 58.6W |
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BSC054N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 40V Drain current: 81A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IKCM20L60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Technology: ClPOS™ Mini; TRENCHSTOP™ Mounting: THT Case: PG-MDIP24 Power dissipation: 29.2W Operating voltage: 13.5...18.5/0...400V DC Operating temperature: -40...125°C Kind of integrated circuit: 3-phase motor controller; IPM Topology: IGBT three-phase bridge; thermistor Voltage class: 600V Output current: -20...20A Type of integrated circuit: driver Integrated circuit features: integrated bootstrap functionality Frequency: 20kHz |
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XC8868FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: microcontroller 8051 Interface: SPI; UART x2 Clock frequency: 24MHz Number of 16bit timers: 4 Number of 10bit A/D converters: 8 Number of PWM channels: 4 Integrated circuit features: watchdog Number of output compare channels: 1 Number of input capture channels: 1 Memory: 1.75kB SRAM; 32kB FLASH Case: PG-TQFP-48 Supply voltage: 3...5V DC |
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IRF7311TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IKQ50N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode |
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IKQ50N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 151W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| IKY50N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Manufacturer series: H3 Turn-on time: 60ns Turn-off time: 325ns Features of semiconductor devices: integrated anti-parallel diode |
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IPC50N04S5-5R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
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IPC50N04S5L-5R5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced |
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| IPD50N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 47A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Kind of channel: enhanced |
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| IPD50N04S4L08ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: -16...20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhanced |
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BSC050N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Power dissipation: 57W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced |
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| IPD30N10S3L34ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 120A Power dissipation: 57W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Kind of channel: enhanced |
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| IAUZ30N10S5L240ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 120A Power dissipation: 45.5W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
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IPB80N08S2L07ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 183nC Kind of channel: enhanced |
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| IAUA180N08S5N026AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced |
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TLS202B1MBV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 5V Output current: 0.15A Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±3% Input voltage: 2.7...18V |
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| S25FL256SAGMFV013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.7...3.6V |
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XMC1403Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: EEPROM emulation; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-64 Supply voltage: 1.8...5.5V DC |
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XMC1404Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-48 Supply voltage: 1.8...5.5V DC |
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XMC1302Q024X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 22 Number of 16bit timers: 8 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1300 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-24 Supply voltage: 1.8...5.5V DC |
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XMC1100T016X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC |
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| XMC1302Q040X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 34 Number of 16bit timers: 8 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-40 Supply voltage: 1.8...5.5V DC |
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XMC1302T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 34 Number of 16bit timers: 8 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC |
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XMC1402F064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC |
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| XMC1402Q040X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 35 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-40 Supply voltage: 1.8...5.5V DC |
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IRSM836-024MATR | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A Mounting: SMD Operating temperature: -40...150°C Case: PQFN12X12 Protection: anti-overload OPP; undervoltage UVP Kind of integrated circuit: 3-phase motor controller; IPM Topology: MOSFET three-phase bridge Technology: iMOTION™ Operating voltage: 11.5...18.5/8.9...200V DC Output current: 2A Type of integrated circuit: driver Power dissipation: 16W Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality |
Produkt ist nicht verfügbar |
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| CY62146EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: VFBGA48 Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY62146EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP44 II Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY62148EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 45ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: VFBGA36 Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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|
|
IDW10G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA Max. off-state voltage: 650V Load current: 10A Max. forward impulse current: 46A Case: PG-TO247-3 Max. forward voltage: 1.8V Kind of package: tube Power dissipation: 65W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Semiconductor structure: single diode Leakage current: 2µA |
Produkt ist nicht verfügbar |
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| CY62128ELL-45SXA | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62128ELL-45SXAT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62128ELL-55SXE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62128ELL-55SXET | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62128ELL-55ZAXE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62128ELL-55ZAXET | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62136ESL-45ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62146ELL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62146ESL-45ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY62146G30-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
| S29AL008J70BFI013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Produkt ist nicht verfügbar
| S29AL008J70BFI020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Produkt ist nicht verfügbar
| S29AL008J70BFI022 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Produkt ist nicht verfügbar
| S29AL008J70BFI023 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Produkt ist nicht verfügbar
| S29AL008J70BFM023 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Produkt ist nicht verfügbar
| S29AL008J70BFN010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Produkt ist nicht verfügbar
| S29AL008J70BFN020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
Produkt ist nicht verfügbar
| S29AL008J70TFI013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Produkt ist nicht verfügbar
| S29AL008J70TFI023 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Produkt ist nicht verfügbar
| S29AL008J70TFN010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Produkt ist nicht verfügbar
| S29AL008J70TFN020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Produkt ist nicht verfügbar
| IPB019N06L3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.53 EUR |
| 31+ | 2.36 EUR |
| 33+ | 2.23 EUR |
| 35+ | 2.1 EUR |
| 100+ | 2.04 EUR |
| SPD30P06PGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1962 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.5 EUR |
| 66+ | 1.09 EUR |
| 71+ | 1.02 EUR |
| BAT1804E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SOT23
Max. off-state voltage: 35V
Max. forward voltage: 1.2V
Load current: 0.1A
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SOT23
Max. off-state voltage: 35V
Max. forward voltage: 1.2V
Load current: 0.1A
Produkt ist nicht verfügbar
| BSC010N04LS6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ITS428L2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.8A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.8A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Produkt ist nicht verfügbar
| DZ540N22K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB501-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.78V
Load current: 540A
Semiconductor structure: single diode
Max. forward impulse current: 16.5kA
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB501-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.78V
Load current: 540A
Semiconductor structure: single diode
Max. forward impulse current: 16.5kA
Produkt ist nicht verfügbar
| IKCM15L60GDXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
| BSC054N04NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| BSZ034N04LSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IKCM20L60GAXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Technology: ClPOS™ Mini; TRENCHSTOP™
Mounting: THT
Case: PG-MDIP24
Power dissipation: 29.2W
Operating voltage: 13.5...18.5/0...400V DC
Operating temperature: -40...125°C
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Output current: -20...20A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Frequency: 20kHz
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Technology: ClPOS™ Mini; TRENCHSTOP™
Mounting: THT
Case: PG-MDIP24
Power dissipation: 29.2W
Operating voltage: 13.5...18.5/0...400V DC
Operating temperature: -40...125°C
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Output current: -20...20A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Frequency: 20kHz
Produkt ist nicht verfügbar
| XC8868FFI5VACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: microcontroller 8051
Interface: SPI; UART x2
Clock frequency: 24MHz
Number of 16bit timers: 4
Number of 10bit A/D converters: 8
Number of PWM channels: 4
Integrated circuit features: watchdog
Number of output compare channels: 1
Number of input capture channels: 1
Memory: 1.75kB SRAM; 32kB FLASH
Case: PG-TQFP-48
Supply voltage: 3...5V DC
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: microcontroller 8051
Interface: SPI; UART x2
Clock frequency: 24MHz
Number of 16bit timers: 4
Number of 10bit A/D converters: 8
Number of PWM channels: 4
Integrated circuit features: watchdog
Number of output compare channels: 1
Number of input capture channels: 1
Memory: 1.75kB SRAM; 32kB FLASH
Case: PG-TQFP-48
Supply voltage: 3...5V DC
Produkt ist nicht verfügbar
| IRF7311TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IKQ50N120CH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IKQ50N120CT2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IKY50N120CH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 60ns
Turn-off time: 325ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 60ns
Turn-off time: 325ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IPC50N04S5-5R8 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPC50N04S5L-5R5 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD50N04S408ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD50N04S4L08ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC050N04LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD30N10S3L34ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUZ30N10S5L240ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| IPB80N08S2L07ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA180N08S5N026AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TLS202B1MBV50HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±3%
Input voltage: 2.7...18V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±3%
Input voltage: 2.7...18V
Produkt ist nicht verfügbar
| S25FL256SAGMFV013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
| XMC1403Q064X0064AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1404Q048X0064AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1302Q024X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1100T016X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1302Q040X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1302T038X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1402F064X0064AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1402Q040X0064AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| IRSM836-024MATR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Mounting: SMD
Operating temperature: -40...150°C
Case: PQFN12X12
Protection: anti-overload OPP; undervoltage UVP
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Mounting: SMD
Operating temperature: -40...150°C
Case: PQFN12X12
Protection: anti-overload OPP; undervoltage UVP
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Produkt ist nicht verfügbar
| CY62146EV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY62146EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY62148EV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| IDW10G65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Power dissipation: 65W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Power dissipation: 65W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Semiconductor structure: single diode
Leakage current: 2µA
Produkt ist nicht verfügbar
| CY62128ELL-45SXA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62128ELL-45SXAT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62128ELL-55SXE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62128ELL-55SXET |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62128ELL-55ZAXE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62128ELL-55ZAXET |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62136ESL-45ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62146ELL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62146ESL-45ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY62146G30-45BVXIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar