IKY50N120CH3XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT 1200V 100A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 32ns/296ns
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17 EUR |
| 30+ | 10.77 EUR |
| 120+ | 9.53 EUR |
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Technische Details IKY50N120CH3XKSA1 Infineon Technologies
Description: IGBT 1200V 100A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 255 ns, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A, Supplier Device Package: PG-TO247-4, Td (on/off) @ 25°C: 32ns/296ns, Switching Energy: 2.3mJ (on), 1.9mJ (off), Test Condition: 600V, 50A, 10Ohm, 15V, Gate Charge: 235 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 652 W.
Weitere Produktangebote IKY50N120CH3XKSA1 nach Preis ab 10.08 EUR bis 17.3 EUR
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IKY50N120CH3XKSA1 | Hersteller : Infineon Technologies |
IGBTs INDUSTRY 14 |
auf Bestellung 326 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY50N120CH3XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKY50N120CH3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Manufacturer series: H3 Turn-on time: 60ns Turn-off time: 325ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IKY50N120CH3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Manufacturer series: H3 Turn-on time: 60ns Turn-off time: 325ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |