Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140576) > Seite 2343 nach 2343
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| CY14B104NA-BA45XET | INFINEON TECHNOLOGIES |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3...3.6V DC |
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| CY14B104NA-BA45XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
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| CY14B104NA-BA45XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
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| CY14B104NA-ZS20XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 20ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 20ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
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| CY14B104NA-ZS20XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 20ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 20ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
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| CY14B104NA-ZS25XE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
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| CY14B104NA-ZS25XET | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
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| CY14B104NA-ZS25XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
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| CY14B104NA-ZS25XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
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| CY14B104NA-ZS45XE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3...3.6V DC |
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| CY14B104NA-ZS45XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
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IDH12G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W Max. forward voltage: 1.8V Load current: 12A Semiconductor structure: single diode Max. forward impulse current: 83A Leakage current: 2.4µA Power dissipation: 104W Kind of package: tube Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Heatsink thickness: 1.17...137mm Mounting: THT Case: PG-TO220-2 Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
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IAUT300N08S5N012ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IAUT300N08S5N011ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced |
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IAUT300N08S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Power dissipation: 300W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BCR523E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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BCR555E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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BFP193WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz |
Produkt ist nicht verfügbar |
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| S25FS256SAGBHI200 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Mounting: SMD Operating temperature: -40...85°C Case: BGA24 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SAGBHI203 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Mounting: SMD Operating temperature: -40...85°C Case: BGA24 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SAGBHV203 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Mounting: SMD Operating temperature: -40...105°C Case: BGA24 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SAGMFI000 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Mounting: SMD Operating temperature: -40...85°C Case: SOIC16 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SAGMFI001 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Mounting: SMD Operating temperature: -40...85°C Case: SOIC16 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SAGNFI000 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8 Mounting: SMD Operating temperature: -40...85°C Case: WSON8 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SAGNFI001 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8 Mounting: SMD Operating temperature: -40...85°C Case: WSON8 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SAGNFI003 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8 Mounting: SMD Operating temperature: -40...85°C Case: WSON8 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| S25FS256SDSNFI000 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8 Mounting: SMD Operating temperature: -40...85°C Case: WSON8 Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Operating voltage: 1.7...2V |
Produkt ist nicht verfügbar |
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| CY7C1399BN-12VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel Operating temperature: -40...85°C Access time: 12ns Kind of interface: parallel Part status: Not recommended for new designs Memory: 256kb SRAM Mounting: SMD Case: SOJ28 Supply voltage: 3...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit |
Produkt ist nicht verfügbar |
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| CY7C1399BN-12VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel Operating temperature: -40...85°C Access time: 12ns Kind of interface: parallel Part status: Not recommended for new designs Memory: 256kb SRAM Mounting: SMD Case: SOJ28 Supply voltage: 3...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit |
Produkt ist nicht verfügbar |
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FS50R12KE3 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: AG-ECONO2-6 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 270W Technology: EconoPACK™ 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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DD89N14K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 89A; BG-PB20-1; Ifsm: 2.4kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: BG-PB20-1 Max. off-state voltage: 1.4kV Max. forward voltage: 0.75V Load current: 89A Semiconductor structure: double series Max. forward impulse current: 2.4kA |
Produkt ist nicht verfügbar |
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| IPP05CN10NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: THT Kind of channel: enhanced |
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| KIT_XC2365A_SK | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: automotive Type of development kit: automotive Associated circuits: XC2000 |
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| IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Kind of package: reel; tape DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: I2C; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of integrated circuit: POL converter Topology: buck Mounting: SMD Operating temperature: -40...125°C Case: PQFN5X7 |
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2EDS8265HXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Kind of package: reel; tape Supply voltage: 3...3.5V; 4.5...20V Output current: -8...4A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Kind of integrated circuit: high-side; MOSFET gate driver Topology: MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-16 |
Produkt ist nicht verfügbar |
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| CY7C1011G30-12ZSXE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1011G30-12ZSXET | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1041G18-15BVXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 15ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...2.2V DC |
Produkt ist nicht verfügbar |
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| CY7C1041G18-15BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 15ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...2.2V DC |
Produkt ist nicht verfügbar |
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| CY7C1041G30-10ZSXE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1041G30-10ZSXAT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1041G30-10ZSXET | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1041G30-10ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1041GN-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY7C1019DV33-10BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1049G-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY7C1049G-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY7C1049G30-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1049G30-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1049G30-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1049G30-10ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY7C1049GN-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| CY7C1049GN-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
||
| CY7C1049GN30-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
||
| CY7C1049GN30-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
||
| CY7C1049GN30-10ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
| CY14B104NA-BA45XET |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-BA45XI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-BA45XIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS20XI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 20ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 20ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 20ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 20ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS20XIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 20ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 20ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 20ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 20ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS25XE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS25XET |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS25XI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS25XIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS45XE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| CY14B104NA-ZS45XI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
| IDH12G65C5 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Max. forward voltage: 1.8V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 83A
Leakage current: 2.4µA
Power dissipation: 104W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...137mm
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Max. forward voltage: 1.8V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 83A
Leakage current: 2.4µA
Power dissipation: 104W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...137mm
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
| IAUT300N08S5N012ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUT300N08S5N011ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUT300N08S5N014ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BCR523E6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| BCR555E6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| BFP193WH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
| S25FS256SAGBHI200 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: BGA24
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: BGA24
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SAGBHI203 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: BGA24
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: BGA24
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SAGBHV203 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: BGA24
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: BGA24
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SAGMFI000 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC16
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC16
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SAGMFI001 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC16
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC16
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SAGNFI000 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SAGNFI001 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SAGNFI003 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| S25FS256SDSNFI000 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
| CY7C1399BN-12VXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Access time: 12ns
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Supply voltage: 3...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Access time: 12ns
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Supply voltage: 3...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
| CY7C1399BN-12VXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Access time: 12ns
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Supply voltage: 3...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Access time: 12ns
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Supply voltage: 3...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
| FS50R12KE3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO2-6
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO2-6
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
| DD89N14K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 89A; BG-PB20-1; Ifsm: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB20-1
Max. off-state voltage: 1.4kV
Max. forward voltage: 0.75V
Load current: 89A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 89A; BG-PB20-1; Ifsm: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB20-1
Max. off-state voltage: 1.4kV
Max. forward voltage: 0.75V
Load current: 89A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Produkt ist nicht verfügbar
| IPP05CN10NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| KIT_XC2365A_SK |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: automotive
Type of development kit: automotive
Associated circuits: XC2000
Category: Development kits - others
Description: Dev.kit: automotive
Type of development kit: automotive
Associated circuits: XC2000
Produkt ist nicht verfügbar
| IR38265MTRPBFAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
Produkt ist nicht verfügbar
| 2EDS8265HXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Produkt ist nicht verfügbar
| CY7C1011G30-12ZSXE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1011G30-12ZSXET |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1041G18-15BVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...2.2V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
| CY7C1041G18-15BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...2.2V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
| CY7C1041G30-10ZSXE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1041G30-10ZSXAT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1041G30-10ZSXET |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1041G30-10ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1041GN-10VXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY7C1019DV33-10BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| CY7C1049G-10VXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY7C1049G-10VXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY7C1049G30-10VXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1049G30-10VXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1049G30-10ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1049G30-10ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1049GN-10VXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY7C1049GN-10VXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| CY7C1049GN30-10VXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1049GN30-10VXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY7C1049GN30-10ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar