Produkte > INFINEON (IRF) > Alle Produkte des Herstellers INFINEON (IRF) (90) > Seite 1 nach 2
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
AUIRF2804S | Infineon (IRF) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
AUIRFR4105 | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 68W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 68W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 22.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRF1010NSPBF | Infineon (IRF) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 60A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.12µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRF240 | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 125W Case: TO3 Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRF3205SPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 97.3nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRF330 | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; 75W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Power dissipation: 75W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRF350 | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 14A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF3710SPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 86.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF5210SPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 0.12µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF5305SPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF640NSPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 44.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRF7103PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7105PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 3.5/-2.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1/0.25Ω Mounting: SMD Gate charge: 9.4/10nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7303PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7309PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.05/0.1Ω Mounting: SMD Gate charge: 16.7/16.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7313PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7314PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -5.3A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 58mΩ Mounting: SMD Gate charge: 19nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7316PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7317PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 6.6/-5.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 29/58mΩ Mounting: SMD Gate charge: 18/19nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7319PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6.5/-4.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Gate charge: 22/23nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7342PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -3.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7343PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55/-55V Drain current: 4.7/-3.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/105mΩ Mounting: SMD Gate charge: 24/26nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7380PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7389PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7.3/-5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Gate charge: 22/23nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7413PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7416PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 61nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7424PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 75nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7425PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 87nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7470PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 13mΩ Mounting: SMD Gate charge: 29nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7493PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 9.2A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7831PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7832PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF7855PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF8707PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11.9mΩ Mounting: SMD Gate charge: 6.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF8736PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF8788PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF8910PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.4mΩ Mounting: SMD Gate charge: 7.4nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF9530NSPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -14A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 38.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRF9540NSPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: SMD Gate charge: 64.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRFB31N20DPBF | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 31A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRFL014NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 1.9A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFL024NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 12.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFL024ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Power dissipation: 2.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 57.5mΩ Mounting: SMD Gate charge: 9.1nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFL4105PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 3.7A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFL4310PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRFR024NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 16A Power dissipation: 38W Case: DPAK Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 13.3nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRFR120NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR120ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.7A Power dissipation: 35W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 6.9nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRFR220NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 43W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 15nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR2405PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 70nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR3710ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 69nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR3806PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15.8mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR3910PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 29.3nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR4105PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 25A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 22.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR48ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 62A; 91W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 62A Power dissipation: 91W Case: DPAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR5305PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRFR5410PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Power dissipation: 66W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 38.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR6215PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
IRFR9024NPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Gate charge: 12.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
IRFR9120NPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.48Ω Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| AUIRF2804S |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AUIRFR4105 |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF1010NSPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF240 |
|
Hersteller: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF3205SPBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 97.3nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 97.3nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF330 |
|
Hersteller: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF350 | |
|
Hersteller: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF3710SPBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 86.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 86.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF5210SPBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF5305SPBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF640NSPBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 44.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 44.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7103PBF |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7105PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Gate charge: 9.4/10nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Gate charge: 9.4/10nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7303PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7309PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Gate charge: 16.7/16.7nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Gate charge: 16.7/16.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7313PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7314PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7316PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7317PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 18/19nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 18/19nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7319PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7342PBF |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7343PBF |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Gate charge: 24/26nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Gate charge: 24/26nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7380PBF |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7389PBF | |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7413PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7416PBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7424PBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7425PBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7470PBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7493PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7831PBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7832PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7855PBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF8707PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF8736PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF8788PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF8910PBF |
|
Hersteller: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9530NSPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 38.7nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 38.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9540NSPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 64.7nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 64.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFB31N20DPBF |
|
Hersteller: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFL014NPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFL024NPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFL024ZPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 57.5mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 57.5mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFL4105PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFL4310PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR024NPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR120NPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR120ZPBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR220NPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR2405PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR3710ZPBF |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR3806PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR3910PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR4105PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR48ZPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 62A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 62A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 62A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 62A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR5305PBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR5410PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 38.7nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 38.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR6215PBF | |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9024NPBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9120NPBF | |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]