IRFL014NPBF
Produktcode: 23061
Hersteller: IRGehäuse: SOT-223
Uds,V: 60
Idd,A: 02.07.2015
Rds(on), Ohm: 01.02.2000
Ciss, pF/Qg, nC: 01.11.300
JHGF: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 0.7 EUR |
| 10+ | 0.57 EUR |
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Technische Details IRFL014NPBF IR
- MOSFET, N, 55V, 1.9A, SOT-223
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:55V
- Cont Current Id:2.7A
- On State Resistance:0.16ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:SOT-223
- Termination Type:Through Hole
- Avalanche Single Pulse Energy Eas:48mJ
- Current Iar:1.7A
- Current Temperature:25`C
- External Depth:7.3mm
- External Length / Height:1.7mm
- External Width:6.7mm
- Fall Time Tf:3.3ns
- Full Power Rating Temperature:25`C
- Junction to Case Thermal Resistance A:120`C/W
- Max Current Idss:1.0eA
- Max Junction Temperature Tj:150`C
- Max On State Resistance:0.16ohm
- Max Power Dissipation Ptot:2.1W
- Max Repetitive Avalanche Energy:0.1mJ
- Max Voltage Vds:55V
- Max Voltage Vgs:20V
- Max Voltage Vgs th:4V
- Min Gfs:1.6A/V
- Min Junction Temperature, Tj:-55`C
- Min Voltage Vgs th:2V
- No. of Transistors:1
- Power Dissipation:1.0W
- Power Dissipation Pd:1W
- Power Dissipation on 1 Sq. PCB:1.0W
- Pulse Current Idm:15A
- Rate of Voltage Change dv / dt:5.0V/ns
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Preis ohne MwSt |
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IRFL014NPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 2.7A 4-Pin(3+Tab) SOT-223 Tube |
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IRFL014NPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 1.9A SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V |
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IRFL014NPBF | Hersteller : Infineon Technologies |
MOSFETs 55V 1 N-CH HEXFET 160mOhms 7nC |
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IRFL014NPBF | Hersteller : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 1.9A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |