Weitere Produktangebote IRF7424PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF7424PBF | Hersteller : International Rectifier HiRel Products | Trans MOSFET P-CH Si 30V 11A 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
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IRF7424PBF | Hersteller : Infineon Technologies | Trans MOSFET P-CH Si 30V 11A 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
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IRF7424PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 11A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7424PBF | Hersteller : Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 13.5mOhms 75nC |
Produkt ist nicht verfügbar |
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IRF7424PBF | Hersteller : Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 75nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |