Technische Details IRFR3806PBF
- MOSFET, N, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:60V
- Cont Current Id:43A
- On State Resistance:12.6mohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:DPAK
- Termination Type:SMD
- Power Dissipation:71W
- Pulse Current Idm:170A
- Transistor Case Style:D-PAK
Weitere Produktangebote IRFR3806PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFR3806PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 60V 43A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFR3806PBF | Hersteller : Infineon Technologies |
MOSFETs 60V SINGLE N-CH 15.8mOhms 22nC |
Produkt ist nicht verfügbar |
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IRFR3806PBF | Hersteller : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15.8mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |