IRF7380PBF ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IRF7380PBF - IRF7380 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
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Lieferzeit 14-21 Tag (e)
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Technische Details IRF7380PBF ROCHESTER ELECTRONICS
Description: MOSFET 2N-CH 80V 3.6A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V, Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key.
Weitere Produktangebote IRF7380PBF
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IRF7380PBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 80V 3.6A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
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IRF7380PBF | Hersteller : Infineon Technologies |
MOSFETs 80V DUAL N-CH HEXFET 73mOhm VGS 10V |
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IRF7380PBF | Hersteller : Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |