Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 659 nach 1259
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FL1690007 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 16pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Frequency Tolerance: ±50ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 16.9344 MHz |
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SMF4L18CAQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 13.7A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-219AA Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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DMTH8008LPSQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 940000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH8008LPSQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 942470 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH32M5LPSQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 285000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH32M5LPSQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 287371 Stücke: Lieferzeit 10-14 Tag (e) |
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DJT4030P-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.2 W |
auf Bestellung 150000 Stücke: Lieferzeit 10-14 Tag (e) |
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DJT4030P-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.2 W |
auf Bestellung 152370 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D4UFZ-7B | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V |
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DMN31D4UFZ-7B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V |
auf Bestellung 6875 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D6UT-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V |
auf Bestellung 960000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D6UT-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V |
auf Bestellung 962995 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 420000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 420000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 5316000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 5320042 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5UDAQ-7B | Diodes Incorporated |
![]() Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 Grade: Automotive Qualification: AEC-Q101 |
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DMN31D5UDW-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-363 |
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DMN31D5UFZQ-7B | Diodes Incorporated |
![]() Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V Qualification: AEC-Q101 |
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DMTH4014LPDWQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 42.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DXTN22040CFGQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 200MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.1 W Qualification: AEC-Q101 |
auf Bestellung 19980 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTN22040DFGQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Frequency - Transition: 198MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.1 W Qualification: AEC-Q101 |
auf Bestellung 19980 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTN22040CFG-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 200MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.1 W |
auf Bestellung 21980 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTN22040DFG-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Frequency - Transition: 198MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.1 W |
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PI6LC48P25104LE | Diodes Incorporated |
![]() Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVPECL Frequency - Max: 187.5MHz Input: Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Main Purpose: Ethernet Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 8-TSSOP PLL: Yes Number of Circuits: 1 DigiKey Programmable: Not Verified |
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PI3EQX12908AZFEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 54-WFQFN Exposed Pad Number of Channels: 8 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: PCIe Data Rate (Max): 12Gbps Supplier Device Package: 54-TQFN (10x5.5) Signal Conditioning: Input Equalization, Output De-Emphasis |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3EQX12908AZFEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 54-WFQFN Exposed Pad Number of Channels: 8 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: PCIe Data Rate (Max): 12Gbps Supplier Device Package: 54-TQFN (10x5.5) Signal Conditioning: Input Equalization, Output De-Emphasis |
auf Bestellung 7972 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT34M8LFDE-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V |
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DMP4013SPSQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4013SPSQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5148 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2992UFB4Q-7B | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V Qualification: AEC-Q101 |
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DMN2992UFB4Q-7B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 9246 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU406 | Diodes Incorporated |
![]() ![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 8830 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMS6008DN8-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 500mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V Current - Output (Max): 1.1A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
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ZXMS6008DN8Q-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 500mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V Current - Output (Max): 1.1A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR1045CT | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
Produkt ist nicht verfügbar |
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MBR1045 | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
Produkt ist nicht verfügbar |
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SDR05F03T5-7 | Diodes Incorporated |
Description: SCHOTTKY DIODE SOD523 T&R 3K Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.1 ns Technology: Schottky Capacitance @ Vr, F: 0.52pF @ 200mV, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 3 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA Current - Reverse Leakage @ Vr: 20 µA @ 3 V |
auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
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FL2500047 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 18pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.030" (0.75mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 25 MHz |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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FL2500047 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 18pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.030" (0.75mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 25 MHz |
auf Bestellung 31525 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ9684Q-7 | Diodes Incorporated |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V Qualification: AEC-Q101 |
auf Bestellung 4143000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ9684Q-7 | Diodes Incorporated |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V Qualification: AEC-Q101 |
auf Bestellung 4147073 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ9689Q-7 | Diodes Incorporated |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V Qualification: AEC-Q101 |
auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ9689Q-7 | Diodes Incorporated |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V Qualification: AEC-Q101 |
auf Bestellung 211599 Stücke: Lieferzeit 10-14 Tag (e) |
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NX21100001 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Voltage - Supply: 3.3V Frequency: 10 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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MBRB20100CT | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 248 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ11A-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 489000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ11A-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 489000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI6C48535-01LE | Diodes Incorporated |
![]() Packaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution), Multiplexer Input: LVCMOS, LVPECL, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 2:4 Differential - Input:Output: No/Yes Supplier Device Package: 20-TSSOP Frequency - Max: 500 MHz |
Produkt ist nicht verfügbar |
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PNP000013 | Diodes Incorporated |
![]() Packaging: Bulk Type: XO (Standard) Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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PNU000001 | Diodes Incorporated |
![]() Packaging: Bulk Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: PECL Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 300.0375 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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FL4820001 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) |
Produkt ist nicht verfügbar |
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PDS4200H-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDS4200H-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 16459 Stücke: Lieferzeit 10-14 Tag (e) |
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AP1695-20CS7-13 | Diodes Incorporated |
Description: IC LED DRIVER OFFL TRIAC 2A 7SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 105°C (TA) Applications: Lighting Current - Output / Channel: 2A Internal Switch(s): Yes Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 7-SO Dimming: Triac Voltage - Supply (Min): 7V Voltage - Supply (Max): 25V |
Produkt ist nicht verfügbar |
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DMP2067LVTQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMP2067LVTQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ64CA-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.9A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: SMA Bidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 400W Power Line Protection: No |
auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ64CA-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.9A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: SMA Bidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 400W Power Line Protection: No |
auf Bestellung 214740 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH4026SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FL1690007 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Description: CRYSTAL 16.9344MHZ 16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 16pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16.9344 MHz
Produkt ist nicht verfügbar
SMF4L18CAQ-7 |
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Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMTH8008LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 940000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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2500+ | 0.79 EUR |
5000+ | 0.75 EUR |
12500+ | 0.74 EUR |
DMTH8008LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 942470 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.9 EUR |
12+ | 1.56 EUR |
100+ | 1.21 EUR |
500+ | 1.03 EUR |
1000+ | 0.84 EUR |
DMTH32M5LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 285000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.82 EUR |
5000+ | 0.78 EUR |
12500+ | 0.74 EUR |
DMTH32M5LPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 287371 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.97 EUR |
11+ | 1.62 EUR |
100+ | 1.26 EUR |
500+ | 1.07 EUR |
1000+ | 0.87 EUR |
DJT4030P-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
Description: TRANS PNP 40V 3A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.27 EUR |
5000+ | 0.26 EUR |
12500+ | 0.24 EUR |
25000+ | 0.23 EUR |
DJT4030P-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
Description: TRANS PNP 40V 3A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.2 W
auf Bestellung 152370 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
26+ | 0.69 EUR |
100+ | 0.48 EUR |
500+ | 0.37 EUR |
1000+ | 0.3 EUR |
DMN31D4UFZ-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Produkt ist nicht verfügbar
DMN31D4UFZ-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 6875 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
68+ | 0.26 EUR |
139+ | 0.13 EUR |
500+ | 0.11 EUR |
1000+ | 0.074 EUR |
2000+ | 0.064 EUR |
5000+ | 0.059 EUR |
DMN31D6UT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 960000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.087 EUR |
6000+ | 0.081 EUR |
9000+ | 0.067 EUR |
30000+ | 0.066 EUR |
75000+ | 0.059 EUR |
150000+ | 0.051 EUR |
DMN31D6UT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
Description: MOSFET N-CH 30V 350MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 962995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
50+ | 0.36 EUR |
102+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.1 EUR |
DMN31D5L-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.079 EUR |
30000+ | 0.078 EUR |
50000+ | 0.07 EUR |
100000+ | 0.062 EUR |
250000+ | 0.06 EUR |
DMN31D5L-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
43+ | 0.42 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5000+ | 0.095 EUR |
DMN31D5L-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5316000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
6000+ | 0.095 EUR |
9000+ | 0.079 EUR |
30000+ | 0.078 EUR |
75000+ | 0.07 EUR |
150000+ | 0.06 EUR |
DMN31D5L-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5320042 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
43+ | 0.42 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
DMN31D5UDAQ-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN31D5UDW-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
DMN31D5UFZQ-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMTH4014LPDWQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DXTN22040CFGQ-7 |
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Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
100+ | 0.56 EUR |
500+ | 0.47 EUR |
1000+ | 0.4 EUR |
DXTN22040DFGQ-7 |
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Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
100+ | 0.56 EUR |
500+ | 0.47 EUR |
1000+ | 0.4 EUR |
DXTN22040CFG-7 |
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Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
auf Bestellung 21980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.9 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
DXTN22040DFG-7 |
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Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 198MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
PI6LC48P25104LE |
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Hersteller: Diodes Incorporated
Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PI3EQX12908AZFEX |
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Hersteller: Diodes Incorporated
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Tape & Reel (TR)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3500+ | 6.92 EUR |
PI3EQX12908AZFEX |
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Hersteller: Diodes Incorporated
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER 12GBPS 8CHAN 54TQFN
Packaging: Cut Tape (CT)
Package / Case: 54-WFQFN Exposed Pad
Number of Channels: 8
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 12Gbps
Supplier Device Package: 54-TQFN (10x5.5)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 7972 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.67 EUR |
10+ | 11.45 EUR |
25+ | 10.92 EUR |
100+ | 9.48 EUR |
250+ | 9.05 EUR |
500+ | 8.26 EUR |
1000+ | 7.19 EUR |
DMT34M8LFDE-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Produkt ist nicht verfügbar
DMP4013SPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.88 EUR |
5000+ | 0.84 EUR |
DMP4013SPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5148 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.13 EUR |
11+ | 1.74 EUR |
100+ | 1.35 EUR |
500+ | 1.15 EUR |
1000+ | 0.93 EUR |
DMN2992UFB4Q-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2992UFB4Q-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 9246 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
91+ | 0.19 EUR |
187+ | 0.094 EUR |
500+ | 0.079 EUR |
1000+ | 0.055 EUR |
2000+ | 0.047 EUR |
5000+ | 0.044 EUR |
GBU406 | ![]() |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 8830 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.16 EUR |
20+ | 1.78 EUR |
100+ | 1.38 EUR |
500+ | 1.17 EUR |
1000+ | 0.96 EUR |
2000+ | 0.9 EUR |
5000+ | 0.86 EUR |
ZXMS6008DN8-13 |
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Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
ZXMS6008DN8Q-13 |
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Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: LOW SIDE INTELLIFET SO-8 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.59 EUR |
5000+ | 0.55 EUR |
12500+ | 0.53 EUR |
MBR1045CT |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
MBR1045 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
SDR05F03T5-7 |
Hersteller: Diodes Incorporated
Description: SCHOTTKY DIODE SOD523 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.1 ns
Technology: Schottky
Capacitance @ Vr, F: 0.52pF @ 200mV, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
Description: SCHOTTKY DIODE SOD523 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.1 ns
Technology: Schottky
Capacitance @ Vr, F: 0.52pF @ 200mV, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.086 EUR |
6000+ | 0.075 EUR |
15000+ | 0.064 EUR |
30000+ | 0.06 EUR |
75000+ | 0.056 EUR |
150000+ | 0.049 EUR |
FL2500047 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.52 EUR |
6000+ | 0.5 EUR |
15000+ | 0.49 EUR |
FL2500047 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.030" (0.75mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
auf Bestellung 31525 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
21+ | 0.87 EUR |
50+ | 0.78 EUR |
100+ | 0.7 EUR |
500+ | 0.66 EUR |
1000+ | 0.56 EUR |
DDZ9684Q-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 4143000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.061 EUR |
6000+ | 0.057 EUR |
9000+ | 0.047 EUR |
30000+ | 0.046 EUR |
75000+ | 0.041 EUR |
150000+ | 0.036 EUR |
DDZ9684Q-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 4147073 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
71+ | 0.25 EUR |
145+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.07 EUR |
DDZ9689Q-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.061 EUR |
6000+ | 0.057 EUR |
9000+ | 0.047 EUR |
30000+ | 0.046 EUR |
75000+ | 0.041 EUR |
150000+ | 0.036 EUR |
DDZ9689Q-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 211599 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
71+ | 0.25 EUR |
145+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.07 EUR |
NX21100001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 10.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 10 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 10.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 10 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
MBRB20100CT |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
50+ | 1 EUR |
100+ | 0.72 EUR |
SMBJ11A-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 11V 18.2V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 11V 18.2V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 489000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
6000+ | 0.15 EUR |
9000+ | 0.14 EUR |
30000+ | 0.13 EUR |
75000+ | 0.11 EUR |
SMBJ11A-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 11V 18.2V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 11V 18.2V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 489000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
35+ | 0.5 EUR |
100+ | 0.25 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
PI6C48535-01LE |
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Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 500 MHz
Description: IC CLK BUFFER 2:4 500MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVCMOS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 500 MHz
Produkt ist nicht verfügbar
PNP000013 |
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Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Type: XO (Standard)
Base Resonator: Crystal
Description: DIODE
Packaging: Bulk
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
PNU000001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 300.0375MHZ PECL
Packaging: Bulk
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: PECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 300.0375 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 300.0375MHZ PECL
Packaging: Bulk
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: PECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 300.0375 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
FL4820001 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Produkt ist nicht verfügbar
PDS4200H-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.62 EUR |
10000+ | 1.57 EUR |
PDS4200H-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE SCHOTTKY 200V 4A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 16459 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.73 EUR |
10+ | 3.1 EUR |
100+ | 2.47 EUR |
500+ | 2.09 EUR |
1000+ | 1.77 EUR |
2000+ | 1.68 EUR |
AP1695-20CS7-13 |
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Produkt ist nicht verfügbar
DMP2067LVTQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMP2067LVTQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
15000+ | 0.18 EUR |
SMAJ64CA-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 64VWM 103VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 64VWM 103VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.15 EUR |
10000+ | 0.14 EUR |
25000+ | 0.13 EUR |
50000+ | 0.11 EUR |
SMAJ64CA-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 64VWM 103VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 64VWM 103VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 214740 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
35+ | 0.5 EUR |
100+ | 0.25 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2000+ | 0.16 EUR |
DMNH4026SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.51 EUR |
5000+ | 0.49 EUR |
12500+ | 0.45 EUR |