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DMN31D5UDAQ-7B Diodes Inc


DMN31D5UDAQ.pdf Hersteller: Diodes Inc
MOSFET BVDSS: 25V30V X2-DFN0806-6 T&R 10K
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Technische Details DMN31D5UDAQ-7B Diodes Inc

Description: MOSFET 2N-CH 30V 0.4A 6DFN, Packaging: Bulk, Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 370mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-6, Grade: Automotive, Qualification: AEC-Q101.

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DMN31D5UDAQ-7B DMN31D5UDAQ-7B Hersteller : Diodes Incorporated DMN31D5UDAQ.pdf Description: MOSFET 2N-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN31D5UDAQ-7B Hersteller : Diodes Incorporated DMN31D5UDAQ-2940721.pdf MOSFET MOSFET BVDSS: 25V-30V X2-DFN0806-6 T&R 10K
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