Produkte > DIODES INCORPORATED > DMN2992UFB4Q-7B
DMN2992UFB4Q-7B

DMN2992UFB4Q-7B Diodes Incorporated

DMN2992UFB4Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 9246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
91+ 0.19 EUR
187+ 0.094 EUR
500+ 0.079 EUR
1000+ 0.055 EUR
2000+ 0.047 EUR
5000+ 0.044 EUR
Mindestbestellmenge: 63
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN2992UFB4Q-7B Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 830mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 380mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V, Qualification: AEC-Q101.

Weitere Produktangebote DMN2992UFB4Q-7B

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN2992UFB4Q-7B DMN2992UFB4Q-7B Hersteller : Diodes Incorporated DMN2992UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2992UFB4Q-7B Hersteller : Diodes Incorporated DMN2992UFB4Q-3103550.pdf MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
Produkt ist nicht verfügbar