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DMN31D5UFZQ-7B

DMN31D5UFZQ-7B Diodes Incorporated


DMN31D5UFZQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
Qualification: AEC-Q101
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Technische Details DMN31D5UFZQ-7B Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V X2-DFN0606, Packaging: Bulk, Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0606-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V, Qualification: AEC-Q101.

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DMN31D5UFZQ-7B Hersteller : Diodes Incorporated DMN31D5UFZQ-3103836.pdf MOSFET MOSFET BVDSS: 25V-30V X2-DFN0606-3 T&R 10K
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