Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 655 nach 1259
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DMP3045LVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V |
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DMN2041UVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 |
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DMN3270UVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 760mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 40µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
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DMN6041SVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1028UVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6111SVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V |
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PI3DPX1202A1ZBE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Number of Channels: 1 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Applications: DisplayPort Data Rate (Max): 5.4Gbps Supplier Device Package: 48-TQFN (7x7) Signal Conditioning: Input Equalization, Output Pre-Emphasis |
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PI3DPX1202A1ZBEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Number of Channels: 1 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Applications: DisplayPort Data Rate (Max): 5.4Gbps Supplier Device Package: 48-TQFN (7x7) Signal Conditioning: Input Equalization, Output Pre-Emphasis |
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DSC10120 | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 640 µA @ 1200 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC10120D1-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 608pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 640 µA @ 1200 V |
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SQF620002Z | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Output: HCSL Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 156.25 MHz Base Resonator: Crystal |
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DMP32D9UFO-7B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0604-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2069UFY4Q-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 530mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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GC1200004 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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GC1200004 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Type: MHz Crystal Operating Mode: Fundamental |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH3390Q-P-A | Diodes Incorporated |
Description: MAGNETIC SWITCH HALL UNIP SIP3 Packaging: Bulk Package / Case: 3-SIP, Formed Leads Mounting Type: Through Hole Supplier Device Package: 3-SIP |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH3390Q-W-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH HALL UNIPOL SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SC-59-3 |
Produkt ist nicht verfügbar |
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MMSTA13-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSTA13-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
auf Bestellung 29500 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ90A-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 2.7A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive |
auf Bestellung 390000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ90A-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 2.7A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive |
auf Bestellung 394890 Stücke: Lieferzeit 10-14 Tag (e) |
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TT4M-T | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TTL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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UX3213E0050.000000 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 25mA Height - Seated (Max): 0.045" (1.15mm) Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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SMBJ120CA-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.1A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 222000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ120CA-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.1A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 224986 Stücke: Lieferzeit 10-14 Tag (e) |
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S12M15600B | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 15 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 125A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
auf Bestellung 8876 Stücke: Lieferzeit 10-14 Tag (e) |
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S8M02600B | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 110°C (TJ) Current - Hold (Ih) (Max): 6 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.8 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 600 V |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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T4M35T600B | Diodes Incorporated |
![]() Packaging: Tube |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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T12M25F600B | Diodes Incorporated |
![]() Packaging: Tube |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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T16M35T600B | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 600 V |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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FH1600054 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Frequency Tolerance: ±15ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 16 MHz |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FH2700030 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 18pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 27 MHz |
Produkt ist nicht verfügbar |
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FH3200007 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 40 Ohms Frequency: 32 MHz |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FH4000079 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Frequency Tolerance: ±15ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 40 Ohms Frequency: 40 MHz |
Produkt ist nicht verfügbar |
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D18V0X1B2LPQ-7B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: X1-DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19.7V Voltage - Clamping (Max) @ Ipp: 36V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 139000 Stücke: Lieferzeit 10-14 Tag (e) |
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D18V0X1B2LP-7B | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: X1-DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19.7V Voltage - Clamping (Max) @ Ipp: 36V Power Line Protection: No |
Produkt ist nicht verfügbar |
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D18V0X1B2LP4Q-7B | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: HDMI, USB Current - Peak Pulse (10/1000µs): 3A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: X2-DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19.7V Voltage - Clamping (Max) @ Ipp: 36V Power - Peak Pulse: 120W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DF005S | Diodes Incorporated |
![]() Packaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 2828 Stücke: Lieferzeit 10-14 Tag (e) |
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DGD21064MS14-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SO Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.6V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
auf Bestellung 112500 Stücke: Lieferzeit 10-14 Tag (e) |
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DGD21064MS14-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SO Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.6V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
auf Bestellung 112500 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD340-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-252-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
auf Bestellung 185000 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD340-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-252-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
auf Bestellung 185684 Stücke: Lieferzeit 10-14 Tag (e) |
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PI7C9X2G612GPDNJEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 196-LBGA Mounting Type: Surface Mount Interface: I2C, PCI Express, SMBus Voltage - Supply: 0.95V ~ 1.1V Applications: Packet Switch, 6-Port/12-Lane Supplier Device Package: 196-LBGA (15x15) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI7C9X2G612GPDNJEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 196-LBGA Mounting Type: Surface Mount Interface: I2C, PCI Express, SMBus Voltage - Supply: 0.95V ~ 1.1V Applications: Packet Switch, 6-Port/12-Lane Supplier Device Package: 196-LBGA (15x15) |
auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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US1NDFQ-13 | Diodes Incorporated |
Description: ULTRAFAST RECOVERY RECTIFIER SOD Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-Flat Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH173-WG-7-B | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Collector Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 20V Technology: Hall Effect Sensing Range: 6mT Trip, -6mT Release Current - Output (Max): 25mA Current - Supply (Max): 6mA Supplier Device Package: SC-59-3 Test Condition: 25°C |
auf Bestellung 8508000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH173-WG-7-B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Collector Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 20V Technology: Hall Effect Sensing Range: 6mT Trip, -6mT Release Current - Output (Max): 25mA Current - Supply (Max): 6mA Supplier Device Package: SC-59-3 Test Condition: 25°C |
auf Bestellung 8508000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LFV-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LFV-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
auf Bestellung 7353 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LPS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LPS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
auf Bestellung 14855 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LFV-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
Produkt ist nicht verfügbar |
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PI4ULS3V204GAEX | Diodes Incorporated |
![]() Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, CSPBGA Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 2Mbps, 24Mbps Supplier Device Package: 12-CSP (1.37x1.87) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Number of Circuits: 4 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI4ULS3V204GAEX | Diodes Incorporated |
![]() Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, CSPBGA Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 2Mbps, 24Mbps Supplier Device Package: 12-CSP (1.37x1.87) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Number of Circuits: 4 |
auf Bestellung 14012 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTD123EC-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTD123EC-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 130227 Stücke: Lieferzeit 10-14 Tag (e) |
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APX803L20-17W5-7 | Diodes Incorporated |
![]() Packaging: Bulk Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 143ms Minimum Voltage - Threshold: 1.7V Supplier Device Package: SOT-25 |
Produkt ist nicht verfügbar |
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APX803L-17W5-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 0ms Typical Voltage - Threshold: 1.7V Supplier Device Package: SOT-25 DigiKey Programmable: Not Verified |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7387-33FDCR-7-50 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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1.5KE300A-B | Diodes Incorporated |
![]() Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 256V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 285V Voltage - Clamping (Max) @ Ipp: 414V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
DMP3045LVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
Produkt ist nicht verfügbar
DMN2041UVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
DMN3270UVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 760mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 40µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 1.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 760mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 40µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN6041SVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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10000+ | 0.21 EUR |
DMC1028UVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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10000+ | 0.22 EUR |
DMP6111SVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
Produkt ist nicht verfügbar
PI3DPX1202A1ZBE |
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Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY V-QFN7070-48 TRAY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Description: ACTIVE DISPLAY V-QFN7070-48 TRAY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Produkt ist nicht verfügbar
PI3DPX1202A1ZBEX |
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Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY V-QFN7070-48 T&R
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Description: ACTIVE DISPLAY V-QFN7070-48 T&R
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Data Rate (Max): 5.4Gbps
Supplier Device Package: 48-TQFN (7x7)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Produkt ist nicht verfügbar
DSC10120 |
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Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.64 EUR |
50+ | 14.07 EUR |
100+ | 12.59 EUR |
DSC10120D1-13 |
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Hersteller: Diodes Incorporated
Description: SILICON CARBIDE RECTIFIER TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
Description: SILICON CARBIDE RECTIFIER TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
Produkt ist nicht verfügbar
SQF620002Z |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 156.2500MHZ HCSL
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: HCSL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 156.25 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 156.2500MHZ HCSL
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: HCSL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 156.25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
DMP32D9UFO-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.46 EUR |
56+ | 0.32 EUR |
115+ | 0.15 EUR |
500+ | 0.13 EUR |
1000+ | 0.089 EUR |
2000+ | 0.077 EUR |
5000+ | 0.072 EUR |
DMP2069UFY4Q-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 530mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN2015-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 530mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN2015-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
29+ | 0.62 EUR |
100+ | 0.43 EUR |
500+ | 0.33 EUR |
1000+ | 0.27 EUR |
GC1200004 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.4 EUR |
GC1200004 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Cut Tape (CT)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Cut Tape (CT)
Type: MHz Crystal
Operating Mode: Fundamental
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
29+ | 0.62 EUR |
50+ | 0.56 EUR |
100+ | 0.5 EUR |
500+ | 0.47 EUR |
AH3390Q-P-A |
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH HALL UNIP SIP3
Packaging: Bulk
Package / Case: 3-SIP, Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-SIP
Description: MAGNETIC SWITCH HALL UNIP SIP3
Packaging: Bulk
Package / Case: 3-SIP, Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-SIP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.44 EUR |
14+ | 1.28 EUR |
25+ | 1.2 EUR |
100+ | 0.98 EUR |
250+ | 0.91 EUR |
500+ | 0.78 EUR |
1000+ | 0.62 EUR |
4000+ | 0.56 EUR |
AH3390Q-W-7 |
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH HALL UNIPOL SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SC-59-3
Description: MAGNETIC SWITCH HALL UNIPOL SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SC-59-3
Produkt ist nicht verfügbar
MMSTA13-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
9000+ | 0.11 EUR |
MMSTA13-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN DARL 30V 0.3A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 29500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
34+ | 0.52 EUR |
100+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
SMAJ90A-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 90V 146V SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Description: TVS DIODE 90V 146V SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
auf Bestellung 390000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.14 EUR |
10000+ | 0.12 EUR |
50000+ | 0.1 EUR |
125000+ | 0.098 EUR |
SMAJ90A-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 90V 146V SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Description: TVS DIODE 90V 146V SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
auf Bestellung 394890 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.45 EUR |
100+ | 0.23 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
TT4M-T |
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Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: MEDIUM/HIGH POWER BRIDGE TTL T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TTL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
UX3213E0050.000000 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
SMBJ120CA-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 120VWM 193VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 120VWM 193VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
6000+ | 0.15 EUR |
9000+ | 0.14 EUR |
30000+ | 0.13 EUR |
SMBJ120CA-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 120VWM 193VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 120VWM 193VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 224986 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
39+ | 0.46 EUR |
100+ | 0.27 EUR |
500+ | 0.25 EUR |
1000+ | 0.17 EUR |
S12M15600B |
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Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 125A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 125A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 8876 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
50+ | 0.84 EUR |
100+ | 0.61 EUR |
500+ | 0.51 EUR |
1000+ | 0.44 EUR |
2000+ | 0.39 EUR |
5000+ | 0.37 EUR |
S8M02600B |
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Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
50+ | 0.85 EUR |
100+ | 0.61 EUR |
500+ | 0.51 EUR |
1000+ | 0.44 EUR |
2000+ | 0.39 EUR |
5000+ | 0.37 EUR |
10000+ | 0.34 EUR |
T4M35T600B |
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auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.07 EUR |
50+ | 0.86 EUR |
T12M25F600B |
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auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.28 EUR |
50+ | 1.06 EUR |
100+ | 0.77 EUR |
500+ | 0.64 EUR |
1000+ | 0.55 EUR |
2000+ | 0.49 EUR |
T16M35T600B |
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Hersteller: Diodes Incorporated
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
Description: THYRISTOR TO220AB TUBE 50PCS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
FH1600054 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
Description: CRYSTAL 16.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 16 MHz
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
FH2700030 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 27.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 27 MHz
Description: CRYSTAL 27.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 27 MHz
Produkt ist nicht verfügbar
FH3200007 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 32 MHz
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 32 MHz
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
FH4000079 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 40.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 40 MHz
Description: CRYSTAL 40.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 40 MHz
Produkt ist nicht verfügbar
D18V0X1B2LPQ-7B |
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Hersteller: Diodes Incorporated
Description: Dataline Protection PP X1-DFN100
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: Dataline Protection PP X1-DFN100
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 139000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
5000+ | 0.16 EUR |
D18V0X1B2LP-7B |
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Hersteller: Diodes Incorporated
Description: DATALINE PROTECTION PP X1-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Description: DATALINE PROTECTION PP X1-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power Line Protection: No
Produkt ist nicht verfügbar
D18V0X1B2LP4Q-7B |
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Hersteller: Diodes Incorporated
Description: DATALINE PROTECTION PP X2-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: X2-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power - Peak Pulse: 120W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: DATALINE PROTECTION PP X2-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: X2-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.7V
Voltage - Clamping (Max) @ Ipp: 36V
Power - Peak Pulse: 120W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DF005S |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 2828 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
50+ | 1.07 EUR |
100+ | 0.78 EUR |
500+ | 0.65 EUR |
1000+ | 0.55 EUR |
2000+ | 0.49 EUR |
DGD21064MS14-13 |
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Hersteller: Diodes Incorporated
Description: IC GATE DRV HALF-BRIDG 14SO 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SO
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRV HALF-BRIDG 14SO 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SO
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 112500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.86 EUR |
5000+ | 1.8 EUR |
DGD21064MS14-13 |
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Hersteller: Diodes Incorporated
Description: IC GATE DRV HALF-BRIDG 14SO 2.5K
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SO
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRV HALF-BRIDG 14SO 2.5K
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SO
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 112500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.07 EUR |
10+ | 3.66 EUR |
25+ | 3.45 EUR |
100+ | 2.94 EUR |
250+ | 2.76 EUR |
500+ | 2.42 EUR |
1000+ | 2 EUR |
MJD340-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 300V 0.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS NPN 300V 0.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 185000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.33 EUR |
5000+ | 0.31 EUR |
12500+ | 0.29 EUR |
MJD340-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 300V 0.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS NPN 300V 0.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 185684 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.84 EUR |
100+ | 0.58 EUR |
500+ | 0.46 EUR |
1000+ | 0.37 EUR |
PI7C9X2G612GPDNJEX |
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Hersteller: Diodes Incorporated
Description: PACKET SWITCH LBGA-196 T&R 1K
Packaging: Tape & Reel (TR)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: I2C, PCI Express, SMBus
Voltage - Supply: 0.95V ~ 1.1V
Applications: Packet Switch, 6-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
Description: PACKET SWITCH LBGA-196 T&R 1K
Packaging: Tape & Reel (TR)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: I2C, PCI Express, SMBus
Voltage - Supply: 0.95V ~ 1.1V
Applications: Packet Switch, 6-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 33.95 EUR |
PI7C9X2G612GPDNJEX |
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Hersteller: Diodes Incorporated
Description: PACKET SWITCH LBGA-196 T&R 1K
Packaging: Cut Tape (CT)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: I2C, PCI Express, SMBus
Voltage - Supply: 0.95V ~ 1.1V
Applications: Packet Switch, 6-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
Description: PACKET SWITCH LBGA-196 T&R 1K
Packaging: Cut Tape (CT)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: I2C, PCI Express, SMBus
Voltage - Supply: 0.95V ~ 1.1V
Applications: Packet Switch, 6-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 50.41 EUR |
10+ | 46.49 EUR |
25+ | 44.4 EUR |
100+ | 39.7 EUR |
250+ | 37.87 EUR |
US1NDFQ-13 |
Hersteller: Diodes Incorporated
Description: ULTRAFAST RECOVERY RECTIFIER SOD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Qualification: AEC-Q101
Description: ULTRAFAST RECOVERY RECTIFIER SOD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
15000+ | 0.13 EUR |
30000+ | 0.12 EUR |
AH173-WG-7-B |
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Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 20V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 6mA
Supplier Device Package: SC-59-3
Test Condition: 25°C
Description: MAGNETIC SWITCH LATCH SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 20V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 6mA
Supplier Device Package: SC-59-3
Test Condition: 25°C
auf Bestellung 8508000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.59 EUR |
6000+ | 0.54 EUR |
9000+ | 0.51 EUR |
15000+ | 0.5 EUR |
30000+ | 0.48 EUR |
AH173-WG-7-B |
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Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 20V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 6mA
Supplier Device Package: SC-59-3
Test Condition: 25°C
Description: MAGNETIC SWITCH LATCH SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 20V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 6mA
Supplier Device Package: SC-59-3
Test Condition: 25°C
auf Bestellung 8508000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.48 EUR |
16+ | 1.14 EUR |
25+ | 0.98 EUR |
50+ | 0.95 EUR |
100+ | 0.81 EUR |
500+ | 0.7 EUR |
1000+ | 0.61 EUR |
DMT68M8LFV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.47 EUR |
6000+ | 0.45 EUR |
DMT68M8LFV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 7353 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.23 EUR |
17+ | 1.07 EUR |
100+ | 0.74 EUR |
500+ | 0.62 EUR |
1000+ | 0.53 EUR |
DMT68M8LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.47 EUR |
5000+ | 0.45 EUR |
12500+ | 0.42 EUR |
DMT68M8LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 14855 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.25 EUR |
17+ | 1.08 EUR |
100+ | 0.75 EUR |
500+ | 0.62 EUR |
1000+ | 0.53 EUR |
DMT68M8LFV-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Produkt ist nicht verfügbar
PI4ULS3V204GAEX |
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Hersteller: Diodes Incorporated
Description: IC TRANSLTR BIDIRECTIONAL 12CSP
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, CSPBGA
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 12-CSP (1.37x1.87)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
Description: IC TRANSLTR BIDIRECTIONAL 12CSP
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, CSPBGA
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 12-CSP (1.37x1.87)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.7 EUR |
6000+ | 0.66 EUR |
PI4ULS3V204GAEX |
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Hersteller: Diodes Incorporated
Description: IC TRANSLTR BIDIRECTIONAL 12CSP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, CSPBGA
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 12-CSP (1.37x1.87)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
Description: IC TRANSLTR BIDIRECTIONAL 12CSP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, CSPBGA
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 12-CSP (1.37x1.87)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
auf Bestellung 14012 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.65 EUR |
12+ | 1.47 EUR |
25+ | 1.4 EUR |
100+ | 1.15 EUR |
250+ | 1.07 EUR |
500+ | 0.95 EUR |
1000+ | 0.75 EUR |
DDTD123EC-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.085 EUR |
6000+ | 0.079 EUR |
9000+ | 0.065 EUR |
30000+ | 0.064 EUR |
75000+ | 0.058 EUR |
DDTD123EC-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 130227 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
51+ | 0.35 EUR |
104+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.098 EUR |
APX803L20-17W5-7 |
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Hersteller: Diodes Incorporated
Description: Reset Generator SOT25 T&R 3K
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 1.7V
Supplier Device Package: SOT-25
Description: Reset Generator SOT25 T&R 3K
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 1.7V
Supplier Device Package: SOT-25
Produkt ist nicht verfügbar
APX803L-17W5-7 |
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Hersteller: Diodes Incorporated
Description: RESET GENERATOR SOT25 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 0ms Typical
Voltage - Threshold: 1.7V
Supplier Device Package: SOT-25
DigiKey Programmable: Not Verified
Description: RESET GENERATOR SOT25 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 0ms Typical
Voltage - Threshold: 1.7V
Supplier Device Package: SOT-25
DigiKey Programmable: Not Verified
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.24 EUR |
15000+ | 0.22 EUR |
30000+ | 0.21 EUR |
AP7387-33FDCR-7-50 |
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Hersteller: Diodes Incorporated
Description: LDO CMOS LOWCURR U-DFN2020-6 T&R
Packaging: Tape & Reel (TR)
Description: LDO CMOS LOWCURR U-DFN2020-6 T&R
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
1.5KE300A-B |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 256VWM 414VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 256VWM 414VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar