DMTH4014LPDWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH4014LPDWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 42.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (SWP), Grade: Automotive, Qualification: AEC-Q101.