Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75521) > Seite 352 nach 1259
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74LVC1G3157DW-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 10Ohm -3db Bandwidth: 300MHz Supplier Device Package: SOT-363 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -42dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 250mOhm Switch Time (Ton, Toff) (Max): 4ns, 7.5ns Channel Capacitance (CS(off), CD(off)): 6pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 1 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G3157FZ4-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 10Ohm -3db Bandwidth: 300MHz Supplier Device Package: X2-DFN1410-6 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -42dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 250mOhm Switch Time (Ton, Toff) (Max): 4ns, 7.5ns Channel Capacitance (CS(off), CD(off)): 6pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 1 |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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B190BQ-13-F | Diodes Incorporated |
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BAV199WQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 140mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2027747 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT46WQ-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 12pF @ 1V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 404012 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G3157DW-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 10Ohm -3db Bandwidth: 300MHz Supplier Device Package: SOT-363 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -42dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 250mOhm Switch Time (Ton, Toff) (Max): 4ns, 7.5ns Channel Capacitance (CS(off), CD(off)): 6pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 1 |
auf Bestellung 28900 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G3157FZ4-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 10Ohm -3db Bandwidth: 300MHz Supplier Device Package: X2-DFN1410-6 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -42dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 250mOhm Switch Time (Ton, Toff) (Max): 4ns, 7.5ns Channel Capacitance (CS(off), CD(off)): 6pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 1 |
auf Bestellung 108419 Stücke: Lieferzeit 10-14 Tag (e) |
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B190BQ-13-F | Diodes Incorporated |
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BAV199Q-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 140mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 957000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV199Q-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 140mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 964505 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXLD1366QET5TA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage - Output: 60V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TSOT-25 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 60V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXLD1366QEN8TC | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 60V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: 8-SO-EP Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 60V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
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ZXLD1366QET5TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage - Output: 60V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TSOT-25 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 60V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXLD1366QEN8TC | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 60V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: 8-SO-EP Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 60V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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D22V0S1U2WS-7 | Diodes Incorporated |
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auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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D5V0M1U2LP3-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 120W Power Line Protection: No Part Status: Active |
auf Bestellung 440000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2302UK-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SK3-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LDK-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6004SCT | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V Power Dissipation (Max): 2.3W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V |
auf Bestellung 14149 Stücke: Lieferzeit 10-14 Tag (e) |
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DRTR5V0U4LP16-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: U-DFN1616-6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power Line Protection: Yes Part Status: Active |
auf Bestellung 153000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR2U100LP-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 1.5A Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR2U60S1F-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 615000 Stücke: Lieferzeit 10-14 Tag (e) |
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D22V0S1U2WS-7 | Diodes Incorporated |
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auf Bestellung 25775 Stücke: Lieferzeit 10-14 Tag (e) |
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D5V0M1U2LP3-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 120W Power Line Protection: No Part Status: Active |
auf Bestellung 452008 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2302UK-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 98199 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SK3-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V |
auf Bestellung 35302 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LDK-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V |
auf Bestellung 5764 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LDT-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active |
auf Bestellung 772834 Stücke: Lieferzeit 10-14 Tag (e) |
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DRTR5V0U4LP16-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: U-DFN1616-6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power Line Protection: Yes Part Status: Active |
auf Bestellung 155030 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR2U100LP-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 1.5A Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 41197 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR2U60S1F-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 616008 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A17GQTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 13360 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3130LQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 489000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV199DWQ-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 140mA (DC) Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 915000 Stücke: Lieferzeit 10-14 Tag (e) |
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B340BQ-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 954000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3130LQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 490533 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV199DWQ-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 140mA (DC) Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 917906 Stücke: Lieferzeit 10-14 Tag (e) |
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B340BQ-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 960704 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4010SK3Q-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V |
auf Bestellung 107500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SSDQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 910000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4010SK3Q-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V |
auf Bestellung 109496 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SSDQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 911975 Stücke: Lieferzeit 10-14 Tag (e) |
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B340Q-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 425375 Stücke: Lieferzeit 10-14 Tag (e) |
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AP3125CMKTR-G1 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Voltage - Breakdown: 3.3V ~ 14.5V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: SOT-26 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15.8 V Part Status: Active |
auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1015UPD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1016UPD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
Produkt ist nicht verfügbar |
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DSS4160FDB-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |
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DSS45160FDB-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 65MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR20B100CT | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Current - Reverse Leakage @ Vr: 95 µA @ 100 V |
Produkt ist nicht verfügbar |
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SBR30E100CT | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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SDM05U20CSP-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: X3-WLB1006-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Current - Reverse Leakage @ Vr: 55 µA @ 20 V |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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SDM2U40CSP-7B | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 85pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: X3-WLB1608-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP3125CMKTR-G1 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Voltage - Breakdown: 3.3V ~ 14.5V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: SOT-26 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15.8 V Part Status: Active |
auf Bestellung 80352 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1015UPD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 |
auf Bestellung 32279 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1016UPD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
auf Bestellung 846 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS4160FDB-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS45160FDB-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 65MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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SDM05U20CSP-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: X3-WLB1006-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Current - Reverse Leakage @ Vr: 55 µA @ 20 V |
auf Bestellung 109302 Stücke: Lieferzeit 10-14 Tag (e) |
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SDM2U40CSP-7B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 85pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: X3-WLB1608-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
auf Bestellung 36694 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G3157DW-7 |
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Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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3000+ | 0.11 EUR |
6000+ | 0.095 EUR |
15000+ | 0.081 EUR |
74LVC1G3157FZ4-7 |
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Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.076 EUR |
10000+ | 0.075 EUR |
B190BQ-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMB
Description: DIODE SCHOTTKY 90V 1A SMB
Produkt ist nicht verfügbar
BAV199WQ-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 140MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2027747 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
59+ | 0.3 EUR |
120+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.085 EUR |
BAT46WQ-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 404012 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
42+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
74LVC1G3157DW-7 |
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Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
auf Bestellung 28900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
35+ | 0.51 EUR |
42+ | 0.43 EUR |
100+ | 0.27 EUR |
250+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
74LVC1G3157FZ4-7 |
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Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
auf Bestellung 108419 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.46 EUR |
52+ | 0.34 EUR |
60+ | 0.3 EUR |
100+ | 0.19 EUR |
250+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.098 EUR |
2500+ | 0.085 EUR |
B190BQ-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMB
Description: DIODE SCHOTTKY 90V 1A SMB
Produkt ist nicht verfügbar
BAV199Q-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 957000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.06 EUR |
6000+ | 0.055 EUR |
9000+ | 0.046 EUR |
30000+ | 0.045 EUR |
75000+ | 0.041 EUR |
150000+ | 0.035 EUR |
BAV199Q-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 964505 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.37 EUR |
73+ | 0.24 EUR |
149+ | 0.12 EUR |
500+ | 0.099 EUR |
1000+ | 0.069 EUR |
ZXLD1366QET5TA |
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Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 1A TSOT25
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC LED DRVR RGLTR PWM 1A TSOT25
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3.17 EUR |
ZXLD1366QEN8TC |
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Hersteller: Diodes Incorporated
Description: IC LED DRIVER RGLTR PWM 1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO-EP
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC LED DRIVER RGLTR PWM 1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO-EP
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
ZXLD1366QET5TA |
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Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC LED DRVR RGLTR PWM 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.32 EUR |
ZXLD1366QEN8TC |
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Hersteller: Diodes Incorporated
Description: IC LED DRIVER RGLTR PWM 1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO-EP
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC LED DRIVER RGLTR PWM 1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO-EP
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
D22V0S1U2WS-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 37VC SOD323
Description: TVS DIODE 22VWM 37VC SOD323
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)D5V0M1U2LP3-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC DFN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 11VC DFN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
auf Bestellung 440000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.053 EUR |
30000+ | 0.052 EUR |
50000+ | 0.047 EUR |
100000+ | 0.041 EUR |
250000+ | 0.04 EUR |
DMG2302UK-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.099 EUR |
6000+ | 0.094 EUR |
9000+ | 0.082 EUR |
30000+ | 0.08 EUR |
75000+ | 0.066 EUR |
DMPH6050SK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.41 EUR |
5000+ | 0.38 EUR |
12500+ | 0.36 EUR |
25000+ | 0.35 EUR |
DMT3006LDK-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
DMT6004SCT |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 14149 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.08 EUR |
50+ | 2.47 EUR |
100+ | 2.03 EUR |
500+ | 1.72 EUR |
1000+ | 1.46 EUR |
2000+ | 1.39 EUR |
5000+ | 1.33 EUR |
10000+ | 1.29 EUR |
DRTR5V0U4LP16-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 153000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
SBR2U100LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 1.5A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SBR 100V 1.5A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.31 EUR |
6000+ | 0.29 EUR |
9000+ | 0.27 EUR |
SBR2U60S1F-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 615000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.17 EUR |
9000+ | 0.15 EUR |
75000+ | 0.14 EUR |
D22V0S1U2WS-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 37VC SOD323
Description: TVS DIODE 22VWM 37VC SOD323
auf Bestellung 25775 Stücke:
Lieferzeit 10-14 Tag (e)D5V0M1U2LP3-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC DFN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 11VC DFN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
auf Bestellung 452008 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
63+ | 0.28 EUR |
129+ | 0.14 EUR |
500+ | 0.11 EUR |
1000+ | 0.079 EUR |
2000+ | 0.069 EUR |
5000+ | 0.064 EUR |
DMG2302UK-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 98199 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
46+ | 0.38 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
DMPH6050SK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
auf Bestellung 35302 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.07 EUR |
20+ | 0.93 EUR |
100+ | 0.64 EUR |
500+ | 0.54 EUR |
1000+ | 0.46 EUR |
DMT3006LDK-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
auf Bestellung 5764 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
28+ | 0.64 EUR |
100+ | 0.44 EUR |
500+ | 0.35 EUR |
1000+ | 0.28 EUR |
DMT3009LDT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 772834 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
16+ | 1.16 EUR |
100+ | 0.9 EUR |
500+ | 0.77 EUR |
1000+ | 0.62 EUR |
DRTR5V0U4LP16-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 155030 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
52+ | 0.34 EUR |
100+ | 0.21 EUR |
500+ | 0.19 EUR |
1000+ | 0.13 EUR |
SBR2U100LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 1.5A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SBR 100V 1.5A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 41197 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.92 EUR |
23+ | 0.78 EUR |
100+ | 0.54 EUR |
500+ | 0.42 EUR |
1000+ | 0.34 EUR |
SBR2U60S1F-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 616008 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.52 EUR |
100+ | 0.31 EUR |
500+ | 0.29 EUR |
1000+ | 0.19 EUR |
ZXMP10A17GQTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13360 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.67 EUR |
13+ | 1.37 EUR |
100+ | 1.06 EUR |
500+ | 0.9 EUR |
DMP3130LQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 489000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
9000+ | 0.17 EUR |
75000+ | 0.16 EUR |
BAV199DWQ-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 140MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 915000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
9000+ | 0.12 EUR |
75000+ | 0.1 EUR |
B340BQ-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 954000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
9000+ | 0.17 EUR |
75000+ | 0.16 EUR |
DMP3130LQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 490533 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
31+ | 0.58 EUR |
100+ | 0.35 EUR |
500+ | 0.32 EUR |
1000+ | 0.22 EUR |
BAV199DWQ-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 140MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 917906 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
B340BQ-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 960704 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
31+ | 0.58 EUR |
100+ | 0.35 EUR |
500+ | 0.32 EUR |
1000+ | 0.22 EUR |
DMP4010SK3Q-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.62 EUR |
5000+ | 0.59 EUR |
12500+ | 0.58 EUR |
DMN6040SSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 910000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.35 EUR |
5000+ | 0.34 EUR |
12500+ | 0.31 EUR |
DMP4010SK3Q-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
auf Bestellung 109496 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.5 EUR |
15+ | 1.23 EUR |
100+ | 0.95 EUR |
500+ | 0.81 EUR |
1000+ | 0.66 EUR |
DMN6040SSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 911975 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.9 EUR |
100+ | 0.62 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
B340Q-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 425375 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
29+ | 0.62 EUR |
100+ | 0.37 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
AP3125CMKTR-G1 |
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Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Voltage - Breakdown: 3.3V ~ 14.5V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Voltage - Breakdown: 3.3V ~ 14.5V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.31 EUR |
15000+ | 0.29 EUR |
30000+ | 0.27 EUR |
DMC1015UPD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.45 EUR |
5000+ | 0.43 EUR |
12500+ | 0.4 EUR |
DMC1016UPD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 8V 24V POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Description: MOSFET 8V 24V POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Produkt ist nicht verfügbar
DSS4160FDB-7 |
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Hersteller: Diodes Incorporated
Description: TRANS NPH U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPH U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
DSS45160FDB-7 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 1A 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPN/PNP 1A 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.34 EUR |
6000+ | 0.32 EUR |
9000+ | 0.3 EUR |
30000+ | 0.29 EUR |
SBR20B100CT |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Description: DIODE SBR 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Produkt ist nicht verfügbar
SBR30E100CT |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 15A TO220AB
Description: DIODE SBR 100V 15A TO220AB
Produkt ist nicht verfügbar
SDM05U20CSP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.14 EUR |
10000+ | 0.12 EUR |
50000+ | 0.1 EUR |
SDM2U40CSP-7B |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 40V 2A X3-WLB1608-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTT 40V 2A X3-WLB1608-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
AP3125CMKTR-G1 |
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Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Voltage - Breakdown: 3.3V ~ 14.5V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Voltage - Breakdown: 3.3V ~ 14.5V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
auf Bestellung 80352 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
25+ | 0.75 EUR |
100+ | 0.6 EUR |
250+ | 0.56 EUR |
500+ | 0.47 EUR |
1000+ | 0.37 EUR |
DMC1015UPD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
auf Bestellung 32279 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.18 EUR |
18+ | 1.03 EUR |
100+ | 0.71 EUR |
500+ | 0.6 EUR |
1000+ | 0.51 EUR |
DMC1016UPD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 8V 24V POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Description: MOSFET 8V 24V POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.39 EUR |
15+ | 1.22 EUR |
100+ | 0.94 EUR |
500+ | 0.74 EUR |
DSS4160FDB-7 |
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Hersteller: Diodes Incorporated
Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.91 EUR |
DSS45160FDB-7 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 1A 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPN/PNP 1A 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
21+ | 0.86 EUR |
100+ | 0.6 EUR |
500+ | 0.46 EUR |
1000+ | 0.38 EUR |
SDM05U20CSP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
auf Bestellung 109302 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.45 EUR |
100+ | 0.23 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
SDM2U40CSP-7B |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 40V 2A X3-WLB1608-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTT 40V 2A X3-WLB1608-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 36694 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |