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ZXMP10A17GQTA

ZXMP10A17GQTA Diodes Incorporated

ZXMP10A17GQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.73 EUR
2000+ 0.69 EUR
5000+ 0.66 EUR
10000+ 0.65 EUR
Mindestbestellmenge: 1000
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Technische Details ZXMP10A17GQTA Diodes Incorporated

Description: MOSFET P-CH 100V 2.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote ZXMP10A17GQTA nach Preis ab 0.67 EUR bis 1.72 EUR

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ZXMP10A17GQTA ZXMP10A17GQTA Hersteller : Diodes Incorporated ZXMP10A17GQ.pdf Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
13+ 1.37 EUR
100+ 1.06 EUR
500+ 0.9 EUR
Mindestbestellmenge: 11
ZXMP10A17GQTA ZXMP10A17GQTA Hersteller : Diodes Incorporated ZXMP10A17GQ.pdf MOSFETs MOSFET BVDSS
auf Bestellung 5501 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.72 EUR
10+ 1.41 EUR
100+ 1.09 EUR
500+ 0.93 EUR
1000+ 0.68 EUR
2000+ 0.67 EUR
Mindestbestellmenge: 2
ZXMP10A17GQTA ZXMP10A17GQTA Hersteller : Diodes Inc zxmp10a17gq.pdf Trans MOSFET P-CH 100V 1.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
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