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DMC1016UPD-13

DMC1016UPD-13 Diodes Incorporated


DMC1016UPD.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 8V-24V
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Lieferzeit 10-14 Tag (e)
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3+1.31 EUR
10+ 1.13 EUR
100+ 0.78 EUR
500+ 0.66 EUR
1000+ 0.56 EUR
2500+ 0.45 EUR
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Technische Details DMC1016UPD-13 Diodes Incorporated

Description: MOSFET 8V 24V POWERDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 12V, 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A, Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V, Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active.

Weitere Produktangebote DMC1016UPD-13 nach Preis ab 0.74 EUR bis 1.39 EUR

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DMC1016UPD-13 DMC1016UPD-13 Hersteller : Diodes Incorporated DMC1016UPD.pdf Description: MOSFET 8V 24V POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
15+ 1.22 EUR
100+ 0.94 EUR
500+ 0.74 EUR
Mindestbestellmenge: 13
DMC1016UPD-13 DMC1016UPD-13 Hersteller : Diodes Inc dmc1016upd.pdf Trans MOSFET N/P-CH 12V/20V 9.5A/8.7A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMC1016UPD-13 DMC1016UPD-13 Hersteller : Diodes Incorporated DMC1016UPD.pdf Description: MOSFET 8V 24V POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Produkt ist nicht verfügbar