DMP3130LQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 489000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
| 75000+ | 0.16 EUR |
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Technische Details DMP3130LQ-7 Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP3130LQ-7 nach Preis ab 0.16 EUR bis 0.75 EUR
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DMP3130LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.4A; 0.7W; SOT23 Mounting: SMD Application: automotive industry Drain-source voltage: -30V Drain current: -2.4A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 0.7W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 373 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3130LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.4A; 0.7W; SOT23 Mounting: SMD Application: automotive industry Drain-source voltage: -30V Drain current: -2.4A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 0.7W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 |
auf Bestellung 373 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3130LQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 3.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 490533 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3130LQ-7 | Hersteller : Diodes Incorporated |
MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101 |
auf Bestellung 99060 Stücke: Lieferzeit 10-14 Tag (e) |
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