Produkte > ALPHA & OMEGA SEMICONDUCTOR > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR (4332) > Seite 43 nach 73
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AONR21117 | Alpha & Omega Semiconductor |
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AONR21117 | Alpha & Omega Semiconductor |
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auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21117 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; 20V; 26.5A; 5W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 26.5A Power dissipation: 5W Case: DFN8 Gate-source voltage: ±8V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 88nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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AONR21305C | Alpha & Omega Semiconductor |
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AONR21305C | Alpha & Omega Semiconductor |
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AONR21307 | Alpha & Omega Semiconductor |
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AONR21307 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 11W Type of transistor: P-MOSFET Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 11mΩ Drain current: -24A Drain-source voltage: -30V Polarisation: unipolar |
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AONR21307 | Alpha & Omega Semiconductor |
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AONR21307 | Alpha & Omega Semiconductor |
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AONR21307 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 11W Type of transistor: P-MOSFET Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 11mΩ Drain current: -24A Drain-source voltage: -30V Polarisation: unipolar Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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AONR21311C | Alpha & Omega Semiconductor |
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AONR21321 | Alpha & Omega Semiconductor |
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AONR21321 | Alpha & Omega Semiconductor |
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AONR21321 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 9.6W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AONR21321 | Alpha & Omega Semiconductor |
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auf Bestellung 1619 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21321 | Alpha & Omega Semiconductor |
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auf Bestellung 1619 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21321 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 9.6W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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AONR21357 | Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AONR21357 | Alpha & Omega Semiconductor |
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AONR21357 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 12W Type of transistor: P-MOSFET Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 7.8mΩ Drain current: -32.5A Drain-source voltage: -30V Polarisation: unipolar |
Produkt ist nicht verfügbar |
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AONR21357 | Alpha & Omega Semiconductor |
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AONR21357 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 12W Type of transistor: P-MOSFET Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 7.8mΩ Drain current: -32.5A Drain-source voltage: -30V Polarisation: unipolar Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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AONR21357_201 | Alpha & Omega Semiconductor |
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AONR26309A | Alpha & Omega Semiconductor |
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AONR32314 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm Case: DFN8 Mounting: SMD Dimensions: 3x3mm Polarisation: unipolar Kind of channel: enhanced Power dissipation: 9.6W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 25.5A On-state resistance: 8.7mΩ Gate charge: 22nC |
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AONR32314 | Alpha & Omega Semiconductor |
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AONR32314 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm Case: DFN8 Mounting: SMD Dimensions: 3x3mm Polarisation: unipolar Kind of channel: enhanced Power dissipation: 9.6W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 25.5A On-state resistance: 8.7mΩ Gate charge: 22nC |
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AONR32318 | Alpha & Omega Semiconductor |
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AONR32320C | Alpha & Omega Semiconductor |
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AONR32320C | Alpha & Omega Semiconductor |
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AONR34332C | Alpha & Omega Semiconductor |
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AONR36326C | Alpha & Omega Semiconductor |
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AONR36326C | Alpha & Omega Semiconductor |
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AONR36366 | Alpha & Omega Semiconductor |
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AONR36366 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Dimensions: 3x3mm |
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AONR36366 | Alpha & Omega Semiconductor |
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AONR36366 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Dimensions: 3x3mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AONR36368 | Alpha & Omega Semiconductor |
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AONR36368 | Alpha & Omega Semiconductor |
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AONR36368 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 9.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Dimensions: 3x3mm |
Produkt ist nicht verfügbar |
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AONR36368 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 9.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Dimensions: 3x3mm Anzahl je Verpackung: 1 Stücke |
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AONR62692E | Alpha & Omega Semiconductor | N-Channel MOSFET |
Produkt ist nicht verfügbar |
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AONR62818 | Alpha & Omega Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR62818 | Alpha & Omega Semiconductor |
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AONR62818 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Case: DFN3.3x3.3 Mounting: SMD Power dissipation: 21.5W On-state resistance: 6.6mΩ Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 41A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR62818 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Case: DFN3.3x3.3 Mounting: SMD Power dissipation: 21.5W On-state resistance: 6.6mΩ Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 41A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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AONR62921 | Alpha & Omega Semiconductor |
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AONR62921 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3 Drain-source voltage: 100V Drain current: 31.5A On-state resistance: 10.2mΩ Type of transistor: N-MOSFET Power dissipation: 21.5W Polarisation: unipolar Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN3.3x3.3 |
Produkt ist nicht verfügbar |
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AONR62921 | Alpha & Omega Semiconductor |
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AONR62921 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3 Drain-source voltage: 100V Drain current: 31.5A On-state resistance: 10.2mΩ Type of transistor: N-MOSFET Power dissipation: 21.5W Polarisation: unipolar Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN3.3x3.3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AONR66406 | Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AONR66406 | Alpha & Omega Semiconductor |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR66406 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm Dimensions: 3x3mm Drain-source voltage: 40V Drain current: 30A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 10.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN8 |
Produkt ist nicht verfügbar |
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AONR66406 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm Dimensions: 3x3mm Drain-source voltage: 40V Drain current: 30A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 10.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AONR66820 | Alpha & Omega Semiconductor |
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AONR66922 | Alpha & Omega Semiconductor |
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AONR66922 | Alpha & Omega Semiconductor |
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AONR66922 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 34A Power dissipation: 20.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 32.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AONR66922 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 34A Power dissipation: 20.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 32.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AONR66924 | Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
AONR21117 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
AONR21117 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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84+ | 1.84 EUR |
90+ | 1.65 EUR |
102+ | 1.39 EUR |
109+ | 1.26 EUR |
118+ | 1.11 EUR |
500+ | 1.03 EUR |
AONR21117 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 26.5A; 5W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 26.5A
Power dissipation: 5W
Case: DFN8
Gate-source voltage: ±8V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 26.5A; 5W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 26.5A
Power dissipation: 5W
Case: DFN8
Gate-source voltage: ±8V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AONR21307 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 11W
Type of transistor: P-MOSFET
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Drain current: -24A
Drain-source voltage: -30V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 11W
Type of transistor: P-MOSFET
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Drain current: -24A
Drain-source voltage: -30V
Polarisation: unipolar
Produkt ist nicht verfügbar
AONR21307 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 11W
Type of transistor: P-MOSFET
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Drain current: -24A
Drain-source voltage: -30V
Polarisation: unipolar
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 11W
Type of transistor: P-MOSFET
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Drain current: -24A
Drain-source voltage: -30V
Polarisation: unipolar
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
AONR21321 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
AONR21321 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
AONR21321 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.6W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.6W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AONR21321 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
auf Bestellung 1619 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
781+ | 0.2 EUR |
AONR21321 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
auf Bestellung 1619 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
235+ | 0.65 EUR |
274+ | 0.54 EUR |
277+ | 0.51 EUR |
398+ | 0.34 EUR |
402+ | 0.33 EUR |
518+ | 0.24 EUR |
1000+ | 0.15 EUR |
AONR21321 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.6W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.6W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
AONR21357 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
AONR21357 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
AONR21357 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 12W
Type of transistor: P-MOSFET
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Drain current: -32.5A
Drain-source voltage: -30V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 12W
Type of transistor: P-MOSFET
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Drain current: -32.5A
Drain-source voltage: -30V
Polarisation: unipolar
Produkt ist nicht verfügbar
AONR21357 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
AONR21357 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 12W
Type of transistor: P-MOSFET
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Drain current: -32.5A
Drain-source voltage: -30V
Polarisation: unipolar
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 12W
Type of transistor: P-MOSFET
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Drain current: -32.5A
Drain-source voltage: -30V
Polarisation: unipolar
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
AONR21357_201 |
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Hersteller: Alpha & Omega Semiconductor
30V P-Channel Mosfet
30V P-Channel Mosfet
Produkt ist nicht verfügbar
AONR26309A |
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Hersteller: Alpha & Omega Semiconductor
30V Complementary MOSFET
30V Complementary MOSFET
Produkt ist nicht verfügbar
AONR32314 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
Produkt ist nicht verfügbar
AONR32314 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
Produkt ist nicht verfügbar
AONR36366 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
AONR36366 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
Produkt ist nicht verfügbar
AONR36366 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
AONR36366 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AONR36368 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
Produkt ist nicht verfügbar
AONR36368 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AONR62818 |
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Hersteller: Alpha & Omega Semiconductor
N-Channel MOSFET
N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)AONR62818 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Case: DFN3.3x3.3
Mounting: SMD
Power dissipation: 21.5W
On-state resistance: 6.6mΩ
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 41A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Case: DFN3.3x3.3
Mounting: SMD
Power dissipation: 21.5W
On-state resistance: 6.6mΩ
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 41A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
80+ | 0.9 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
101+ | 0.71 EUR |
500+ | 0.7 EUR |
AONR62818 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Case: DFN3.3x3.3
Mounting: SMD
Power dissipation: 21.5W
On-state resistance: 6.6mΩ
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 41A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Case: DFN3.3x3.3
Mounting: SMD
Power dissipation: 21.5W
On-state resistance: 6.6mΩ
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 41A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
80+ | 0.9 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
101+ | 0.71 EUR |
500+ | 0.7 EUR |
AONR62921 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
Produkt ist nicht verfügbar
AONR62921 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AONR66406 |
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Hersteller: Alpha & Omega Semiconductor
N-Channel MOSFET
N-Channel MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)AONR66406 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
Produkt ist nicht verfügbar
AONR66406 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AONR66820 |
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Hersteller: Alpha & Omega Semiconductor
Medium Voltage MOSFETs (40V - 400V)
Medium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
AONR66922 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AONR66922 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AONR66924 |
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Hersteller: Alpha & Omega Semiconductor
Medium Voltage MOSFETs (40V - 400V)
Medium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar