AONR26309A Alpha & Omega Semiconductor
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Technische Details AONR26309A Alpha & Omega Semiconductor
Description: MOSFET N/P-CH 30V 6.5A/14A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain (Complementary), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3).
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Foto | Bezeichnung | Hersteller | Beschreibung |
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AONR26309A | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain (Complementary) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) |
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