![AONR62818 AONR62818](https://ce8dc832c.cloudimg.io/v7/_cdn_/44/A6/B0/00/0/748100_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=17aded5bd493ad649b97507412a1f2c463c6f0f2)
AONR62818 ALPHA & OMEGA SEMICONDUCTOR
![AONR62818.pdf](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Case: DFN3.3x3.3
Mounting: SMD
Power dissipation: 21.5W
On-state resistance: 6.6mΩ
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 41A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
80+ | 0.9 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
101+ | 0.71 EUR |
500+ | 0.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AONR62818 ALPHA & OMEGA SEMICONDUCTOR
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V, Power Dissipation (Max): 4.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V.
Weitere Produktangebote AONR62818 nach Preis ab 0.7 EUR bis 1.13 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AONR62818 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Case: DFN3.3x3.3 Mounting: SMD Power dissipation: 21.5W On-state resistance: 6.6mΩ Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 41A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
AONR62818 | Hersteller : Alpha & Omega Semiconductor |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
![]() |
AONR62818 | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
AONR62818 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V Power Dissipation (Max): 4.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V |
Produkt ist nicht verfügbar |