AONR21357 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.39 EUR |
| 10000+ | 0.36 EUR |
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Technische Details AONR21357 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V.
Weitere Produktangebote AONR21357 nach Preis ab 0.41 EUR bis 1.09 EUR
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AONR21357 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/34A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
auf Bestellung 16999 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
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AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
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AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
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| AONR21357 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 12W Type of transistor: P-MOSFET Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 7.8mΩ Drain current: -32.5A Drain-source voltage: -30V Polarisation: unipolar Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| AONR21357 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 12W Type of transistor: P-MOSFET Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 7.8mΩ Drain current: -32.5A Drain-source voltage: -30V Polarisation: unipolar |
Produkt ist nicht verfügbar |