AONR21307 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.36 EUR |
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Technische Details AONR21307 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 24A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V, Power Dissipation (Max): 5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V.
Weitere Produktangebote AONR21307 nach Preis ab 0.36 EUR bis 0.77 EUR
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AONR21307 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 24A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V |
auf Bestellung 200238 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21307 | Hersteller : Alpha & Omega Semiconductor |
P-Channel MOSFET |
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AONR21307 | Hersteller : Alpha & Omega Semiconductor |
P-Channel MOSFET |
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AONR21307 | Hersteller : Alpha & Omega Semiconductor |
P-Channel MOSFET |
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| AONR21307 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 11W Type of transistor: P-MOSFET Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 11mΩ Drain current: -24A Drain-source voltage: -30V Polarisation: unipolar Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| AONR21307 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 11W Type of transistor: P-MOSFET Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V On-state resistance: 11mΩ Drain current: -24A Drain-source voltage: -30V Polarisation: unipolar |
Produkt ist nicht verfügbar |