Technische Details AONR32314 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 17A/30A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V, Power Dissipation (Max): 4.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: 8-DFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V.
Weitere Produktangebote AONR32314
Foto | Bezeichnung | Hersteller | Beschreibung |
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AONR32314 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm Case: DFN8 Mounting: SMD Dimensions: 3x3mm Polarisation: unipolar Kind of channel: enhanced Power dissipation: 9.6W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 25.5A On-state resistance: 8.7mΩ Gate charge: 22nC |
Produkt ist nicht verfügbar |
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AONR32314 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V |
Produkt ist nicht verfügbar |
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![]() |
AONR32314 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm Case: DFN8 Mounting: SMD Dimensions: 3x3mm Polarisation: unipolar Kind of channel: enhanced Power dissipation: 9.6W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 25.5A On-state resistance: 8.7mΩ Gate charge: 22nC |
Produkt ist nicht verfügbar |