Produkte > ALPHA & OMEGA SEMICONDUCTOR > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR (4332) > Seite 46 nach 73
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AONS66916 | Alpha & Omega Semiconductor |
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AONS66916 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 86W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 67nC Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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AONS66916T | Alpha & Omega Semiconductor |
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AONS66917 | Alpha & Omega Semiconductor |
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AONS66917 | Alpha & Omega Semiconductor |
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AONS66919 | Alpha & Omega Semiconductor |
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AONS66920 | Alpha & Omega Semiconductor |
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auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONS66920 | Alpha & Omega Semiconductor |
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AONS66920 | Alpha & Omega Semiconductor |
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auf Bestellung 20063 Stücke: Lieferzeit 14-21 Tag (e) |
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AONS66920 | Alpha & Omega Semiconductor |
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auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONS66923 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6 Mounting: SMD Drain-source voltage: 100V Drain current: 30A On-state resistance: 10.8mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 |
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AONS66923 | Alpha & Omega Semiconductor |
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AONS66923 | Alpha & Omega Semiconductor |
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AONS66923 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6 Mounting: SMD Drain-source voltage: 100V Drain current: 30A On-state resistance: 10.8mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AONS67614 | Alpha & Omega Semiconductor |
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AONS850A70 | Alpha & Omega Semiconductor |
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AONT21313C | Alpha & Omega Semiconductor |
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AONV110A60 | Alpha & Omega Semiconductor |
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AONV125A60 | Alpha & Omega Semiconductor |
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AONV180A60 | Alpha & Omega Semiconductor |
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AONV210A60 | Alpha & Omega Semiconductor |
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AONV420A60 | Alpha & Omega Semiconductor |
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AONX38168 | Alpha & Omega Semiconductor |
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AONX38168 | Alpha & Omega Semiconductor |
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AONX38320 | Alpha & Omega Semiconductor |
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AONY36302 | Alpha & Omega Semiconductor |
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AONY36304 | Alpha & Omega Semiconductor |
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AONY36352 | Alpha & Omega Semiconductor |
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AONY36352 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/72.5A Power dissipation: 8.5/18W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric |
auf Bestellung 1140 Stücke: Lieferzeit 14-21 Tag (e) |
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AONY36352 | Alpha & Omega Semiconductor |
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AONY36352 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/72.5A Power dissipation: 8.5/18W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1140 Stücke: Lieferzeit 7-14 Tag (e) |
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AONY36354 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54.5A Power dissipation: 8.5/12.5W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2.6mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric |
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AONY36354 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R |
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AONY36354 | Alpha & Omega Semiconductor |
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AONY36354 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54.5A Power dissipation: 8.5/12.5W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2.6mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric Anzahl je Verpackung: 3000 Stücke |
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AONY36356 | Alpha & Omega Semiconductor |
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AONY36356 | Alpha & Omega Semiconductor |
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AOP610 | Alpha & Omega Semiconductor |
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AOS296A001 | Alpha & Omega Semiconductor | AOD296A_001 |
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AOSD21307 | Alpha & Omega Semiconductor |
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AOSD21311C | Alpha & Omega Semiconductor |
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AOSD26313C | Alpha & Omega Semiconductor |
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AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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AOSD32334C | Alpha & Omega Semiconductor |
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AOSD62666E | Alpha & Omega Semiconductor |
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AOSD62666E | Alpha & Omega Semiconductor |
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AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
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AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 501 Stücke: Lieferzeit 7-14 Tag (e) |
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AOSN21319C | Alpha & Omega Semiconductor |
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AOSP21307 | Alpha & Omega Semiconductor |
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AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Case: SO8 Gate-source voltage: ±25V Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Mounting: SMD |
auf Bestellung 1108 Stücke: Lieferzeit 14-21 Tag (e) |
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AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Case: SO8 Gate-source voltage: ±25V Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1108 Stücke: Lieferzeit 7-14 Tag (e) |
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AOSP21307 | Alpha & Omega Semiconductor |
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AOSP21311C | Alpha & Omega Semiconductor |
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AOSP21313C | Alpha & Omega Semiconductor |
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AOSP21321 | Alpha & Omega Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOSP21321 | Alpha & Omega Semiconductor |
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AOSP21321 | Alpha & Omega Semiconductor |
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auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOSP21321 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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AONS66916 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 30A 8-Pin DFN EP T/R
Trans MOSFET N-CH 100V 30A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
AONS66916 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 86W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 86W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AONS66916T |
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Hersteller: Alpha & Omega Semiconductor
Medium Voltage MOSFETs
Medium Voltage MOSFETs
Produkt ist nicht verfügbar
AONS66917 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 100A 8-Pin DFN EP
Trans MOSFET N-CH 100V 100A 8-Pin DFN EP
Produkt ist nicht verfügbar
AONS66917 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 100A 8-Pin DFN EP
Trans MOSFET N-CH 100V 100A 8-Pin DFN EP
Produkt ist nicht verfügbar
AONS66920 |
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Hersteller: Alpha & Omega Semiconductor
100V N-Channel AlphaSGT
100V N-Channel AlphaSGT
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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3000+ | 0.69 EUR |
AONS66920 |
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Hersteller: Alpha & Omega Semiconductor
100V N-Channel AlphaSGT
100V N-Channel AlphaSGT
Produkt ist nicht verfügbar
AONS66920 |
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Hersteller: Alpha & Omega Semiconductor
100V N-Channel AlphaSGT
100V N-Channel AlphaSGT
auf Bestellung 20063 Stücke:
Lieferzeit 14-21 Tag (e)AONS66920 |
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Hersteller: Alpha & Omega Semiconductor
100V N-Channel AlphaSGT
100V N-Channel AlphaSGT
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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3000+ | 0.69 EUR |
AONS66923 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 10.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 10.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Produkt ist nicht verfügbar
AONS66923 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 10.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 10.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AONS850A70 |
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Hersteller: Alpha & Omega Semiconductor
High Voltage MOSFETs (500V - 1000V)
High Voltage MOSFETs (500V - 1000V)
Produkt ist nicht verfügbar
AONV110A60 |
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Hersteller: Alpha & Omega Semiconductor
High Voltage MOSFETs (500V - 1000V)
High Voltage MOSFETs (500V - 1000V)
Produkt ist nicht verfügbar
AONV180A60 |
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Hersteller: Alpha & Omega Semiconductor
N Channel Power Transistor
N Channel Power Transistor
Produkt ist nicht verfügbar
AONV210A60 |
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Hersteller: Alpha & Omega Semiconductor
N Channel Power Transistor
N Channel Power Transistor
Produkt ist nicht verfügbar
AONV420A60 |
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Hersteller: Alpha & Omega Semiconductor
N Channel Power Transistor
N Channel Power Transistor
Produkt ist nicht verfügbar
AONX38168 |
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Hersteller: Alpha & Omega Semiconductor
25V Dual Asymmetric N-Channel MOSFET
25V Dual Asymmetric N-Channel MOSFET
Produkt ist nicht verfügbar
AONX38168 |
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Hersteller: Alpha & Omega Semiconductor
25V Dual Asymmetric N-Channel MOSFET
25V Dual Asymmetric N-Channel MOSFET
Produkt ist nicht verfügbar
AONY36302 |
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Hersteller: Alpha & Omega Semiconductor
Dual Asymmetric N Channel MOSFET
Dual Asymmetric N Channel MOSFET
Produkt ist nicht verfügbar
AONY36304 |
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Hersteller: Alpha & Omega Semiconductor
Dual Asymmetric N Channel MOSFET
Dual Asymmetric N Channel MOSFET
Produkt ist nicht verfügbar
AONY36352 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
AONY36352 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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64+ | 1.13 EUR |
74+ | 0.97 EUR |
83+ | 0.86 EUR |
90+ | 0.8 EUR |
95+ | 0.76 EUR |
500+ | 0.73 EUR |
AONY36352 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
AONY36352 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1140 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
74+ | 0.97 EUR |
83+ | 0.86 EUR |
90+ | 0.8 EUR |
95+ | 0.76 EUR |
500+ | 0.73 EUR |
AONY36354 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
AONY36354 |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
AONY36354 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
AONY36354 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AONY36356 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
AONY36356 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
AOP610 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N/P-CH 30V 7.7A/6.2A 8-Pin PDIP
Trans MOSFET N/P-CH 30V 7.7A/6.2A 8-Pin PDIP
Produkt ist nicht verfügbar
AOSD21307 |
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Hersteller: Alpha & Omega Semiconductor
30V Dual P-Channel MOSFET
30V Dual P-Channel MOSFET
Produkt ist nicht verfügbar
AOSD21311C |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSD26313C |
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Hersteller: Alpha & Omega Semiconductor
30V Complementary MOSFET
30V Complementary MOSFET
Produkt ist nicht verfügbar
AOSD26313C |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
AOSD26313C |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOSD32334C |
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Hersteller: Alpha & Omega Semiconductor
30V Dual N-Channel MOSFET
30V Dual N-Channel MOSFET
Produkt ist nicht verfügbar
AOSD62666E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSD62666E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSD62666E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
139+ | 0.51 EUR |
160+ | 0.45 EUR |
181+ | 0.4 EUR |
191+ | 0.37 EUR |
AOSD62666E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 501 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
139+ | 0.51 EUR |
160+ | 0.45 EUR |
181+ | 0.4 EUR |
191+ | 0.37 EUR |
AOSP21307 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Case: SO8
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Case: SO8
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Mounting: SMD
auf Bestellung 1108 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
167+ | 0.43 EUR |
188+ | 0.38 EUR |
216+ | 0.33 EUR |
229+ | 0.31 EUR |
AOSP21307 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Case: SO8
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Case: SO8
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1108 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
167+ | 0.43 EUR |
188+ | 0.38 EUR |
216+ | 0.33 EUR |
229+ | 0.31 EUR |
AOSP21321 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
AOSP21321 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP21321 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
6000+ | 0.21 EUR |
9000+ | 0.19 EUR |
AOSP21321 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
221+ | 0.32 EUR |
227+ | 0.31 EUR |