AONY36352 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 74+ | 0.97 EUR |
| 83+ | 0.86 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 500+ | 0.73 EUR |
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Technische Details AONY36352 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active.
Weitere Produktangebote AONY36352 nach Preis ab 0.73 EUR bis 1.94 EUR
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AONY36352 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/72.5A Power dissipation: 8.5/18W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1140 Stücke: Lieferzeit 7-14 Tag (e) |
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AONY36352 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
auf Bestellung 5588 Stücke: Lieferzeit 10-14 Tag (e) |
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AONY36352 Produktcode: 190950 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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| AONY36352 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R |
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| AONY36352 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |
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AONY36352 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
Produkt ist nicht verfügbar |