AONR36368 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 23A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V
Description: MOSFET N-CH 30V 23A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V
auf Bestellung 4083 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
26+ | 0.68 EUR |
100+ | 0.47 EUR |
500+ | 0.37 EUR |
1000+ | 0.3 EUR |
2000+ | 0.27 EUR |
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Technische Details AONR36368 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 23A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 4.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V.
Weitere Produktangebote AONR36368
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AONR36368 | Hersteller : Alpha & Omega Semiconductor | N-Channel MOSFET |
Produkt ist nicht verfügbar |
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AONR36368 | Hersteller : Alpha & Omega Semiconductor | N-Channel MOSFET |
Produkt ist nicht verfügbar |
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AONR36368 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 9.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Dimensions: 3x3mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AONR36368 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 23A/32A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V |
Produkt ist nicht verfügbar |
||
AONR36368 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 9.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Dimensions: 3x3mm |
Produkt ist nicht verfügbar |