AONR32320C

AONR32320C Alpha & Omega Semiconductor Inc.


AONR32320C.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9.5A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.18 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details AONR32320C Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 30V 9.5A/12A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V, Power Dissipation (Max): 3.1W (Ta), 11W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V.

Weitere Produktangebote AONR32320C nach Preis ab 0.19 EUR bis 0.69 EUR

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Preis ohne MwSt
AONR32320C AONR32320C Hersteller : Alpha & Omega Semiconductor Inc. AONR32320C.pdf Description: MOSFET N-CH 30V 9.5A/12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 8976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
33+ 0.54 EUR
100+ 0.32 EUR
500+ 0.3 EUR
1000+ 0.2 EUR
2000+ 0.19 EUR
Mindestbestellmenge: 26
AONR32320C
Produktcode: 180701
AONR32320C.pdf Transistoren > MOSFET N-CH
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AONR32320C AONR32320C Hersteller : Alpha & Omega Semiconductor aonr32320c.pdf 30V N-Channel MOSFET
Produkt ist nicht verfügbar
AONR32320C AONR32320C Hersteller : Alpha & Omega Semiconductor aonr32320c.pdf 30V N-Channel MOSFET
Produkt ist nicht verfügbar