Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SMM02040DYYYYBB31A | VISHAY | SMM02040DYYYYBB31A SMD resistors |
Produkt ist nicht verfügbar |
||||||||||||||
SMM02070C5102FBP00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0207 MELF; 51kΩ; 1W; ±1%; Ø2.2x5.8mm Type of resistor: thin film Mounting: SMD Case: 0207 MELF Resistance: 51kΩ Power: 1W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SMP24A-M3/84A | VISHAY |
![]() Description: Diode: TVS; 400W; 26.7V; 10.3A; unidirectional; SMP; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMP Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Technology: TransZorb® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
ACCTRITOB308-T000 | VISHAY |
![]() Description: Tool: for potentiometers adjustment Type of tool: for potentiometers adjustment Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
SQ1421EDH-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1A Power dissipation: 0.5W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SQ1431EH-T1_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
SQ1470AEH-T1_GE3 | VISHAY |
![]() |
auf Bestellung 2996 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
SQ1539EH-T1_GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 850/-850mA Kind of package: reel; tape Drain-source voltage: 30/-30V Drain current: 850/-850mA On-state resistance: 1.8Ω/380mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Gate charge: 1.6/1.4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SC70-6; SOT363 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQ2301ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -20V Drain current: -2.2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2303ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A Mounting: SMD Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -10A Case: SOT23 Drain-source voltage: -30V Drain current: -2.5A On-state resistance: 370mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2308CES-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 9A Power dissipation: 2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.325Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1982 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
SQ2309ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.7A; Idm: -6.8A Mounting: SMD Case: SOT23 Polarisation: unipolar Pulsed drain current: -6.8A Power dissipation: 2W Gate charge: 8.5nC Technology: TrenchFET® Drain current: -1.7A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 704mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQ2310ES-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 30mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 628 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2315ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Application: automotive industry Power dissipation: 0.67W Kind of package: reel; tape Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Drain current: -5A On-state resistance: 75mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1957 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2318AES-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 4.6A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 31mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 4.6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1074 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2319ADS-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -2A; 0.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2710 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2325ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 1W Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -2A Drain-source voltage: -150V Drain current: -1A On-state resistance: 4.4Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2337ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -80V; -1.3A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.29Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 11.8nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -80V Drain current: -1.3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3073 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() +1 |
SQ2351ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -1.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1928 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2361AEES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.67W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -11A Type of transistor: P-MOSFET Application: automotive industry On-state resistance: 315mΩ Drain current: -2.8A Drain-source voltage: -60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQ2361ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -11A Power dissipation: 0.67W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQ2362ES-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; Idm: 17A; 1W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Drain-source voltage: 60V Drain current: 4.3A On-state resistance: 147mΩ Type of transistor: N-MOSFET Power dissipation: 1W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2367 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2364EES-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 245mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 60V Drain current: 1.3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1614 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ2389ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.1A Pulsed drain current: -16A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 169mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2938 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
SQ2398ES-T1_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQ3419EV-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.9A Pulsed drain current: -27A Power dissipation: 1.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
SQ3426AEEV-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQ3426EV-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2228 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
SQ3427AEEV-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 1.6W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Features of semiconductor devices: ESD protected gate Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
SQ3427EV-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 5W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
SQ3457EV-T1_BE3 | VISHAY | SQ3457EV-T1-BE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
SQ3457EV-T1_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
SQ3461EV-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.6A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SQ3481EV-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A Case: TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 70mΩ Power dissipation: 4W Polarisation: unipolar Drain current: -7.5A Drain-source voltage: -30V Gate charge: 23.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SQ3493EV-T1_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
SQ4050EY-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W Kind of package: reel; tape Mounting: SMD Drain-source voltage: 40V Drain current: 19A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQ4153EY-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -14A Power dissipation: 2.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 8.32mΩ Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2475 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
SQ4282EY-T1_BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQ4284EY-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQ4850EY-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.9A Power dissipation: 6.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQ4940AEY-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.3A Pulsed drain current: 32A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 448 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
SQ4961EY-T1-GE3 | VISHAY | SQ4961EY-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
SQ7414CENW-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W Kind of package: reel; tape Drain-source voltage: 60V Drain current: 18A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 62W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQ9945BEY-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.1A Power dissipation: 4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2120 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
SQA401EEJ-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.55A Power dissipation: 4.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 113mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SQA405CEJW-T1_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
SQA411CEJW-T1_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
SQA413CEJW-T1_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
SQA470EEJ-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.25A Power dissipation: 13.6W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SQD100N04-3M6L-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 136W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQD19P06-60L_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQD25N15-52_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 107W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
SQD30N05-20L_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Pulsed drain current: 120A Power dissipation: 50W Case: TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQD40031EL_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -94A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1972 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
SQD40052EL_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SQD45P03-12_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -37A Power dissipation: 23W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 55.3nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQD50N04-4M5L_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 85nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQD50N05-11L-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 32A Power dissipation: 75W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SQD50P06-15L_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -50A Pulsed drain current: -200A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
SQD50P08-28_GE3 | VISHAY |
![]() |
Produkt ist nicht verfügbar |
SMM02070C5102FBP00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 51kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 51kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Anzahl je Verpackung: 1500 Stücke
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 51kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 51kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
SMP24A-M3/84A |
![]() |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 26.7V; 10.3A; unidirectional; SMP; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMP
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Technology: TransZorb®
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 26.7V; 10.3A; unidirectional; SMP; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMP
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Technology: TransZorb®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ACCTRITOB308-T000 |
![]() |
Hersteller: VISHAY
Category: Trimmer adjustment tools
Description: Tool: for potentiometers adjustment
Type of tool: for potentiometers adjustment
Anzahl je Verpackung: 1 Stücke
Category: Trimmer adjustment tools
Description: Tool: for potentiometers adjustment
Type of tool: for potentiometers adjustment
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.85 EUR |
11+ | 6.72 EUR |
SQ1421EDH-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ1431EH-T1_GE3 |
![]() |
Hersteller: VISHAY
SQ1431EH-T1-GE3 SMD P channel transistors
SQ1431EH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ1470AEH-T1_GE3 |
![]() |
Hersteller: VISHAY
SQ1470AEH-T1-GE3 SMD N channel transistors
SQ1470AEH-T1-GE3 SMD N channel transistors
auf Bestellung 2996 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
SQ1539EH-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 850/-850mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 850/-850mA
On-state resistance: 1.8Ω/380mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 1.6/1.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70-6; SOT363
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 850/-850mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 850/-850mA
On-state resistance: 1.8Ω/380mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 1.6/1.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70-6; SOT363
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2301ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.2A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
117+ | 0.61 EUR |
142+ | 0.51 EUR |
261+ | 0.27 EUR |
275+ | 0.26 EUR |
SQ2303ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.5A
On-state resistance: 370mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.5A
On-state resistance: 370mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
85+ | 0.84 EUR |
204+ | 0.35 EUR |
228+ | 0.31 EUR |
291+ | 0.25 EUR |
307+ | 0.23 EUR |
SQ2308CES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 9A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 9A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1982 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
139+ | 0.51 EUR |
160+ | 0.45 EUR |
179+ | 0.4 EUR |
189+ | 0.38 EUR |
SQ2309ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.7A; Idm: -6.8A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -6.8A
Power dissipation: 2W
Gate charge: 8.5nC
Technology: TrenchFET®
Drain current: -1.7A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 704mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.7A; Idm: -6.8A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -6.8A
Power dissipation: 2W
Gate charge: 8.5nC
Technology: TrenchFET®
Drain current: -1.7A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 704mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2310ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 628 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.17 EUR |
138+ | 0.52 EUR |
153+ | 0.47 EUR |
155+ | 0.46 EUR |
164+ | 0.44 EUR |
500+ | 0.42 EUR |
SQ2315ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Application: automotive industry
Power dissipation: 0.67W
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Application: automotive industry
Power dissipation: 0.67W
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1957 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 0.57 EUR |
171+ | 0.42 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
SQ2318AES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.6A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 4.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.6A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 4.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1074 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
105+ | 0.69 EUR |
127+ | 0.56 EUR |
157+ | 0.46 EUR |
237+ | 0.3 EUR |
252+ | 0.28 EUR |
SQ2319ADS-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2A; 0.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2A; 0.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2710 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
147+ | 0.49 EUR |
167+ | 0.43 EUR |
188+ | 0.38 EUR |
200+ | 0.36 EUR |
SQ2325ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -2A
Drain-source voltage: -150V
Drain current: -1A
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -2A
Drain-source voltage: -150V
Drain current: -1A
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.22 EUR |
70+ | 1.03 EUR |
79+ | 0.92 EUR |
200+ | 0.36 EUR |
211+ | 0.34 EUR |
SQ2337ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.29Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -80V
Drain current: -1.3A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.29Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -80V
Drain current: -1.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3073 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.04 EUR |
134+ | 0.53 EUR |
152+ | 0.47 EUR |
175+ | 0.41 EUR |
185+ | 0.39 EUR |
SQ2351ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1928 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
82+ | 0.87 EUR |
177+ | 0.41 EUR |
195+ | 0.37 EUR |
255+ | 0.28 EUR |
270+ | 0.27 EUR |
SQ2361AEES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.67W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11A
Type of transistor: P-MOSFET
Application: automotive industry
On-state resistance: 315mΩ
Drain current: -2.8A
Drain-source voltage: -60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.67W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11A
Type of transistor: P-MOSFET
Application: automotive industry
On-state resistance: 315mΩ
Drain current: -2.8A
Drain-source voltage: -60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2361ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2362ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; Idm: 17A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain-source voltage: 60V
Drain current: 4.3A
On-state resistance: 147mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; Idm: 17A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain-source voltage: 60V
Drain current: 4.3A
On-state resistance: 147mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2367 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
73+ | 0.99 EUR |
85+ | 0.84 EUR |
97+ | 0.74 EUR |
237+ | 0.3 EUR |
252+ | 0.28 EUR |
SQ2364EES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 245mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 60V
Drain current: 1.3A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 245mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 60V
Drain current: 1.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1614 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
124+ | 0.58 EUR |
140+ | 0.51 EUR |
161+ | 0.44 EUR |
171+ | 0.42 EUR |
SQ2389ES-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 169mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 169mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2938 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.22 EUR |
70+ | 1.03 EUR |
79+ | 0.91 EUR |
192+ | 0.37 EUR |
203+ | 0.35 EUR |
SQ2398ES-T1_GE3 |
![]() |
Hersteller: VISHAY
SQ2398ES-T1-GE3 SMD N channel transistors
SQ2398ES-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQ3419EV-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3426AEEV-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3426EV-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2228 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
68+ | 1.06 EUR |
100+ | 0.72 EUR |
113+ | 0.64 EUR |
130+ | 0.55 EUR |
138+ | 0.52 EUR |
SQ3427AEEV-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 1.6W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Features of semiconductor devices: ESD protected gate
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 1.6W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Features of semiconductor devices: ESD protected gate
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3427EV-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 5W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 5W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
68+ | 1.06 EUR |
103+ | 0.7 EUR |
114+ | 0.63 EUR |
157+ | 0.46 EUR |
166+ | 0.43 EUR |
SQ3457EV-T1_BE3 |
Hersteller: VISHAY
SQ3457EV-T1-BE3 SMD P channel transistors
SQ3457EV-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3457EV-T1_GE3 |
![]() |
Hersteller: VISHAY
SQ3457EV-T1-GE3 SMD P channel transistors
SQ3457EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3461EV-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3481EV-T1_BE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3493EV-T1_GE3 |
![]() |
Hersteller: VISHAY
SQ3493EV-T1-GE3 SMD P channel transistors
SQ3493EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ4050EY-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4153EY-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.45 EUR |
33+ | 2.23 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
SQ4282EY-T1_BE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4284EY-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4850EY-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 448 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.17 EUR |
69+ | 1.05 EUR |
82+ | 0.87 EUR |
87+ | 0.83 EUR |
500+ | 0.79 EUR |
SQ4961EY-T1-GE3 |
Hersteller: VISHAY
SQ4961EY-T1-GE3 Multi channel transistors
SQ4961EY-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ9945BEY-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2120 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.04 EUR |
76+ | 0.95 EUR |
99+ | 0.73 EUR |
105+ | 0.69 EUR |
SQA401EEJ-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQA405CEJW-T1_GE3 |
![]() |
Hersteller: VISHAY
SQA405CEJW-T1-GE3 SMD P channel transistors
SQA405CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA411CEJW-T1_GE3 |
![]() |
Hersteller: VISHAY
SQA411CEJW-T1-GE3 SMD P channel transistors
SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 |
![]() |
Hersteller: VISHAY
SQA413CEJW-T1-GE3 SMD P channel transistors
SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD25N15-52_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.2 EUR |
37+ | 1.97 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
SQD40052EL_GE3 |
![]() |
Hersteller: VISHAY
SQD40052EL-GE3 SMD N channel transistors
SQD40052EL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQD45P03-12_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 |
![]() |
Hersteller: VISHAY
SQD50P08-28-GE3 SMD P channel transistors
SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar