Produkte > VISHAY > Alle Produkte des Herstellers VISHAY (319759) > Seite 813 nach 5330

Wählen Sie Seite:   [  << Vorherige Seite ]  1 533 808 809 810 811 812 813 814 815 816 817 818 1066 1599 2132 2665 3198 3731 4264 4797 5330  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SMM02040DYYYYBB31A VISHAY SMM02040DYYYYBB31A SMD resistors
Produkt ist nicht verfügbar
SMM02070C5102FBP00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 51kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 51kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
SMP24A-M3/84A VISHAY smp.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 26.7V; 10.3A; unidirectional; SMP; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMP
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Technology: TransZorb®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ACCTRITOB308-T000 ACCTRITOB308-T000 VISHAY spe-8.pdf Category: Trimmer adjustment tools
Description: Tool: for potentiometers adjustment
Type of tool: for potentiometers adjustment
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.85 EUR
11+ 6.72 EUR
Mindestbestellmenge: 7
SQ1421EDH-T1_GE3 VISHAY SQ1421EDH.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ1431EH-T1_GE3 VISHAY sq1431eh.pdf SQ1431EH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ1470AEH-T1_GE3 VISHAY sq1470aeh.pdf SQ1470AEH-T1-GE3 SMD N channel transistors
auf Bestellung 2996 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 72
SQ1539EH-T1_GE3 VISHAY sq1539eh.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 850/-850mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 850/-850mA
On-state resistance: 1.8Ω/380mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 1.6/1.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70-6; SOT363
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 VISHAY SQ2301ES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
117+0.61 EUR
142+ 0.51 EUR
261+ 0.27 EUR
275+ 0.26 EUR
Mindestbestellmenge: 117
SQ2303ES-T1_GE3 SQ2303ES-T1_GE3 VISHAY sq2303es.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.5A
On-state resistance: 370mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
85+0.84 EUR
204+ 0.35 EUR
228+ 0.31 EUR
291+ 0.25 EUR
307+ 0.23 EUR
Mindestbestellmenge: 85
SQ2308CES-T1_GE3 SQ2308CES-T1_GE3 VISHAY sq2308ces.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 9A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1982 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
139+ 0.51 EUR
160+ 0.45 EUR
179+ 0.4 EUR
189+ 0.38 EUR
Mindestbestellmenge: 76
SQ2309ES-T1_GE3 VISHAY sq2309es.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.7A; Idm: -6.8A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -6.8A
Power dissipation: 2W
Gate charge: 8.5nC
Technology: TrenchFET®
Drain current: -1.7A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 704mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 VISHAY SQ2310ES.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 628 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.17 EUR
138+ 0.52 EUR
153+ 0.47 EUR
155+ 0.46 EUR
164+ 0.44 EUR
500+ 0.42 EUR
Mindestbestellmenge: 61
SQ2315ES-T1_GE3 SQ2315ES-T1_GE3 VISHAY sq2315es.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Application: automotive industry
Power dissipation: 0.67W
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1957 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
171+ 0.42 EUR
214+ 0.33 EUR
227+ 0.32 EUR
Mindestbestellmenge: 125
SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 VISHAY SQ2318AES.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.6A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 4.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1074 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
127+ 0.56 EUR
157+ 0.46 EUR
237+ 0.3 EUR
252+ 0.28 EUR
Mindestbestellmenge: 105
SQ2319ADS-T1_GE3 SQ2319ADS-T1_GE3 VISHAY SQ2319ADS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2A; 0.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2710 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
147+ 0.49 EUR
167+ 0.43 EUR
188+ 0.38 EUR
200+ 0.36 EUR
Mindestbestellmenge: 76
SQ2325ES-T1_GE3 SQ2325ES-T1_GE3 VISHAY sq2325es.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -2A
Drain-source voltage: -150V
Drain current: -1A
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
70+ 1.03 EUR
79+ 0.92 EUR
200+ 0.36 EUR
211+ 0.34 EUR
Mindestbestellmenge: 59
SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 VISHAY SQ2337ES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.29Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -80V
Drain current: -1.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3073 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
134+ 0.53 EUR
152+ 0.47 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 69
SQ2351ES-T1_GE3
+1
 		SQ2351ES-T1_GE3 VISHAY SQ2351ES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1928 Stücke:
Lieferzeit 7-14 Tag (e)
82+0.87 EUR
177+ 0.41 EUR
195+ 0.37 EUR
255+ 0.28 EUR
270+ 0.27 EUR
Mindestbestellmenge: 82
SQ2361AEES-T1_GE3 SQ2361AEES-T1_GE3 VISHAY sq2361aees.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.67W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11A
Type of transistor: P-MOSFET
Application: automotive industry
On-state resistance: 315mΩ
Drain current: -2.8A
Drain-source voltage: -60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 VISHAY sq2361es.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 VISHAY sq2362es.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; Idm: 17A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain-source voltage: 60V
Drain current: 4.3A
On-state resistance: 147mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2367 Stücke:
Lieferzeit 7-14 Tag (e)
73+0.99 EUR
85+ 0.84 EUR
97+ 0.74 EUR
237+ 0.3 EUR
252+ 0.28 EUR
Mindestbestellmenge: 73
SQ2364EES-T1_GE3 SQ2364EES-T1_GE3 VISHAY sq2364ees.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 245mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 60V
Drain current: 1.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1614 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
124+ 0.58 EUR
140+ 0.51 EUR
161+ 0.44 EUR
171+ 0.42 EUR
Mindestbestellmenge: 63
SQ2389ES-T1_GE3 SQ2389ES-T1_GE3 VISHAY sq2389es.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 169mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2938 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
70+ 1.03 EUR
79+ 0.91 EUR
192+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 59
SQ2398ES-T1_GE3 VISHAY sq2398es.pdf SQ2398ES-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQ3419EV-T1_GE3 SQ3419EV-T1_GE3 VISHAY sq3419ev.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3426AEEV-T1_GE3 VISHAY sq3426eev.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3426EV-T1_GE3 SQ3426EV-T1_GE3 VISHAY sq3426ev.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2228 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
100+ 0.72 EUR
113+ 0.64 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 68
SQ3427AEEV-T1_GE3 SQ3427AEEV-T1_GE3 VISHAY sq3427aeev.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 1.6W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Features of semiconductor devices: ESD protected gate
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3427EV-T1_GE3 VISHAY sq3427ev.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 5W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
103+ 0.7 EUR
114+ 0.63 EUR
157+ 0.46 EUR
166+ 0.43 EUR
Mindestbestellmenge: 68
SQ3457EV-T1_BE3 VISHAY SQ3457EV-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3457EV-T1_GE3 VISHAY sq3457ev.pdf SQ3457EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3461EV-T1_GE3 VISHAY SQ3461EV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3481EV-T1_BE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3493EV-T1_GE3 VISHAY doc?77089 SQ3493EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ4050EY-T1_GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4153EY-T1_GE3 SQ4153EY-T1_GE3 VISHAY SQ4153EY.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.45 EUR
33+ 2.23 EUR
45+ 1.6 EUR
48+ 1.5 EUR
Mindestbestellmenge: 30
SQ4282EY-T1_BE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4284EY-T1_GE3 SQ4284EY-T1_GE3 VISHAY SQ4284EY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 VISHAY SQ4850EY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 SQ4940AEY-T1_GE3 VISHAY SQ4940AEY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 448 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.17 EUR
69+ 1.05 EUR
82+ 0.87 EUR
87+ 0.83 EUR
500+ 0.79 EUR
Mindestbestellmenge: 61
SQ4961EY-T1-GE3 VISHAY SQ4961EY-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 VISHAY sq7414cenw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ9945BEY-T1_GE3 SQ9945BEY-T1_GE3 VISHAY SQ9945BEY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2120 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
76+ 0.95 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 69
SQA401EEJ-T1_GE3 VISHAY SQA401EEJ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQA405CEJW-T1_GE3 VISHAY sqa405cejw.pdf SQA405CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA411CEJW-T1_GE3 VISHAY sqa411cejw.pdf SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 VISHAY sqa413cejw.pdf SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 VISHAY sqa470eej.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 SQD19P06-60L_GE3 VISHAY SQD19P06-60L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD25N15-52_GE3 SQD25N15-52_GE3 VISHAY SQD25N15-52.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 VISHAY sqd30n05-20l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 SQD40031EL_GE3 VISHAY SQD40031EL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
37+ 1.97 EUR
50+ 1.43 EUR
53+ 1.36 EUR
Mindestbestellmenge: 33
SQD40052EL_GE3 VISHAY sqd40052el.pdf SQD40052EL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQD45P03-12_GE3 SQD45P03-12_GE3 VISHAY SQD45P03-12.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 SQD50N04-4M5L_GE3 VISHAY SQD50N04-4M5L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 SQD50N05-11L-GE3 VISHAY SQD50N05-11L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 SQD50P06-15L_GE3 VISHAY sqd50p06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 VISHAY sqd50p08.pdf SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SMM02040DYYYYBB31A
Hersteller: VISHAY
SMM02040DYYYYBB31A SMD resistors
Produkt ist nicht verfügbar
SMM02070C5102FBP00
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 51kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 51kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
SMP24A-M3/84A smp.pdf
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 26.7V; 10.3A; unidirectional; SMP; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMP
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Technology: TransZorb®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ACCTRITOB308-T000 spe-8.pdf
ACCTRITOB308-T000
Hersteller: VISHAY
Category: Trimmer adjustment tools
Description: Tool: for potentiometers adjustment
Type of tool: for potentiometers adjustment
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+10.85 EUR
11+ 6.72 EUR
Mindestbestellmenge: 7
SQ1421EDH-T1_GE3 SQ1421EDH.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ1431EH-T1_GE3 sq1431eh.pdf
Hersteller: VISHAY
SQ1431EH-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ1470AEH-T1_GE3 sq1470aeh.pdf
Hersteller: VISHAY
SQ1470AEH-T1-GE3 SMD N channel transistors
auf Bestellung 2996 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 72
SQ1539EH-T1_GE3 sq1539eh.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 850/-850mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 850/-850mA
On-state resistance: 1.8Ω/380mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 1.6/1.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70-6; SOT363
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2301ES-T1_GE3 SQ2301ES.pdf
SQ2301ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
117+0.61 EUR
142+ 0.51 EUR
261+ 0.27 EUR
275+ 0.26 EUR
Mindestbestellmenge: 117
SQ2303ES-T1_GE3 sq2303es.pdf
SQ2303ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.5A
On-state resistance: 370mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
85+0.84 EUR
204+ 0.35 EUR
228+ 0.31 EUR
291+ 0.25 EUR
307+ 0.23 EUR
Mindestbestellmenge: 85
SQ2308CES-T1_GE3 sq2308ces.pdf
SQ2308CES-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 9A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1982 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
139+ 0.51 EUR
160+ 0.45 EUR
179+ 0.4 EUR
189+ 0.38 EUR
Mindestbestellmenge: 76
SQ2309ES-T1_GE3 sq2309es.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.7A; Idm: -6.8A
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -6.8A
Power dissipation: 2W
Gate charge: 8.5nC
Technology: TrenchFET®
Drain current: -1.7A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 704mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2310ES-T1_GE3 SQ2310ES.pdf
SQ2310ES-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 628 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.17 EUR
138+ 0.52 EUR
153+ 0.47 EUR
155+ 0.46 EUR
164+ 0.44 EUR
500+ 0.42 EUR
Mindestbestellmenge: 61
SQ2315ES-T1_GE3 sq2315es.pdf
SQ2315ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Application: automotive industry
Power dissipation: 0.67W
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1957 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
171+ 0.42 EUR
214+ 0.33 EUR
227+ 0.32 EUR
Mindestbestellmenge: 125
SQ2318AES-T1_GE3 SQ2318AES.pdf
SQ2318AES-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.6A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 4.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1074 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
127+ 0.56 EUR
157+ 0.46 EUR
237+ 0.3 EUR
252+ 0.28 EUR
Mindestbestellmenge: 105
SQ2319ADS-T1_GE3 SQ2319ADS.pdf
SQ2319ADS-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2A; 0.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2710 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
147+ 0.49 EUR
167+ 0.43 EUR
188+ 0.38 EUR
200+ 0.36 EUR
Mindestbestellmenge: 76
SQ2325ES-T1_GE3 sq2325es.pdf
SQ2325ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -2A
Drain-source voltage: -150V
Drain current: -1A
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
70+ 1.03 EUR
79+ 0.92 EUR
200+ 0.36 EUR
211+ 0.34 EUR
Mindestbestellmenge: 59
SQ2337ES-T1_GE3 SQ2337ES.pdf
SQ2337ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.29Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -80V
Drain current: -1.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3073 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
134+ 0.53 EUR
152+ 0.47 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 69
SQ2351ES-T1_GE3 SQ2351ES.pdf
SQ2351ES-T1_GE3
+1
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1928 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
82+0.87 EUR
177+ 0.41 EUR
195+ 0.37 EUR
255+ 0.28 EUR
270+ 0.27 EUR
Mindestbestellmenge: 82
SQ2361AEES-T1_GE3 sq2361aees.pdf
SQ2361AEES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.67W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11A
Type of transistor: P-MOSFET
Application: automotive industry
On-state resistance: 315mΩ
Drain current: -2.8A
Drain-source voltage: -60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2361ES-T1_GE3 sq2361es.pdf
SQ2361ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ2362ES-T1_GE3 sq2362es.pdf
SQ2362ES-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; Idm: 17A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain-source voltage: 60V
Drain current: 4.3A
On-state resistance: 147mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2367 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
73+0.99 EUR
85+ 0.84 EUR
97+ 0.74 EUR
237+ 0.3 EUR
252+ 0.28 EUR
Mindestbestellmenge: 73
SQ2364EES-T1_GE3 sq2364ees.pdf
SQ2364EES-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 245mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 60V
Drain current: 1.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1614 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
63+1.14 EUR
124+ 0.58 EUR
140+ 0.51 EUR
161+ 0.44 EUR
171+ 0.42 EUR
Mindestbestellmenge: 63
SQ2389ES-T1_GE3 sq2389es.pdf
SQ2389ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 169mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2938 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
70+ 1.03 EUR
79+ 0.91 EUR
192+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 59
SQ2398ES-T1_GE3 sq2398es.pdf
Hersteller: VISHAY
SQ2398ES-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQ3419EV-T1_GE3 sq3419ev.pdf
SQ3419EV-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3426AEEV-T1_GE3 sq3426eev.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3426EV-T1_GE3 sq3426ev.pdf
SQ3426EV-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2228 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
100+ 0.72 EUR
113+ 0.64 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 68
SQ3427AEEV-T1_GE3 sq3427aeev.pdf
SQ3427AEEV-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 1.6W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Features of semiconductor devices: ESD protected gate
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3427EV-T1_GE3 sq3427ev.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 5W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
103+ 0.7 EUR
114+ 0.63 EUR
157+ 0.46 EUR
166+ 0.43 EUR
Mindestbestellmenge: 68
SQ3457EV-T1_BE3
Hersteller: VISHAY
SQ3457EV-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3457EV-T1_GE3 sq3457ev.pdf
Hersteller: VISHAY
SQ3457EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3461EV-T1_GE3 SQ3461EV.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3481EV-T1_BE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3493EV-T1_GE3 doc?77089
Hersteller: VISHAY
SQ3493EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ4050EY-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4153EY-T1_GE3 SQ4153EY.pdf
SQ4153EY-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.45 EUR
33+ 2.23 EUR
45+ 1.6 EUR
48+ 1.5 EUR
Mindestbestellmenge: 30
SQ4282EY-T1_BE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4284EY-T1_GE3 SQ4284EY.pdf
SQ4284EY-T1_GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4850EY-T1_GE3 SQ4850EY.pdf
SQ4850EY-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 SQ4940AEY.pdf
SQ4940AEY-T1_GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 448 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.17 EUR
69+ 1.05 EUR
82+ 0.87 EUR
87+ 0.83 EUR
500+ 0.79 EUR
Mindestbestellmenge: 61
SQ4961EY-T1-GE3
Hersteller: VISHAY
SQ4961EY-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 sq7414cenw.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ9945BEY-T1_GE3 SQ9945BEY.pdf
SQ9945BEY-T1_GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
76+ 0.95 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 69
SQA401EEJ-T1_GE3 SQA401EEJ.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQA405CEJW-T1_GE3 sqa405cejw.pdf
Hersteller: VISHAY
SQA405CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA411CEJW-T1_GE3 sqa411cejw.pdf
Hersteller: VISHAY
SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 sqa413cejw.pdf
Hersteller: VISHAY
SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 sqa470eej.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 SQD19P06-60L.pdf
SQD19P06-60L_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD25N15-52_GE3 SQD25N15-52.pdf
SQD25N15-52_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 sqd30n05-20l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 SQD40031EL.pdf
SQD40031EL_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
37+ 1.97 EUR
50+ 1.43 EUR
53+ 1.36 EUR
Mindestbestellmenge: 33
SQD40052EL_GE3 sqd40052el.pdf
Hersteller: VISHAY
SQD40052EL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQD45P03-12_GE3 SQD45P03-12.pdf
SQD45P03-12_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 SQD50N04-4M5L.pdf
SQD50N04-4M5L_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 SQD50N05-11L.pdf
SQD50N05-11L-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 sqd50p06.pdf
SQD50P06-15L_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 sqd50p08.pdf
Hersteller: VISHAY
SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 533 808 809 810 811 812 813 814 815 816 817 818 1066 1599 2132 2665 3198 3731 4264 4797 5330  [ Nächste Seite >> ]