SQ2315ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 12V 5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 4 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.28 EUR |
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Technische Details SQ2315ES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 4 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ2315ES-T1_GE3 nach Preis ab 0.28 EUR bis 0.95 EUR
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SQ2315ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Application: automotive industry Power dissipation: 0.67W Kind of package: reel; tape Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Drain current: -5A On-state resistance: 75mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1957 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ2315ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Application: automotive industry Power dissipation: 0.67W Kind of package: reel; tape Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Drain current: -5A On-state resistance: 75mΩ Type of transistor: P-MOSFET |
auf Bestellung 1957 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2315ES-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs P-Channel 12V AEC-Q101 Qualified |
auf Bestellung 101339 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2315ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 4 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 18139 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2315ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2315ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 5 A, 0.042 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.042ohm |
auf Bestellung 12925 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2315ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2315ES-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |