Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SQJ126EP-T1_GE3 | VISHAY | SQJ126EP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SQJ158EP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Power dissipation: 45W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ164ELP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 130A Power dissipation: 187W Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ170ELP-T1_GE3 | VISHAY |
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Produkt ist nicht verfügbar |
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SQJ402EP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ409EP-T1_BE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -60A Pulsed drain current: -150A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ422EP-T1_BE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W Kind of package: reel; tape On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Drain-source voltage: 40V Drain current: 75A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ431AEP-T1_BE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -9.4A Pulsed drain current: -60A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 763mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ431EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -12A Pulsed drain current: -40A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 527mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ443EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -23A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ457EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -36A Pulsed drain current: -100A Power dissipation: 22W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 50.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ459EP-T1_BE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 83W Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ459EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ461EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -30A Pulsed drain current: -120A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ463EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ465EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2875 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJ476EP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerPAK® SO8 Drain-source voltage: 100V Drain current: 13A On-state resistance: 38mΩ Type of transistor: N-MOSFET Power dissipation: 45W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ481EP-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -9.2A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2993 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJ486EP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 17A Power dissipation: 56W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ858AEP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ868EP-T1_GE3 | VISHAY |
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Produkt ist nicht verfügbar |
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SQJ974EP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 16W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJA16EP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 575A Power dissipation: 500W Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJB70EP-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Power dissipation: 9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJQ130EL-T1_GE3 | VISHAY |
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Produkt ist nicht verfügbar |
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SQJQ184E-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 430A; Idm: 1200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 430A Pulsed drain current: 1.2kA Power dissipation: 600W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 272nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SQJQ900E-T1_GE3 | VISHAY | SQJQ900E-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SQJQ960EL-T1_GE3 | VISHAY |
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Produkt ist nicht verfügbar |
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SQM100N04-2m7_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 98A Power dissipation: 157W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 95.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQM100P10-19L_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -53A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQM120N06-3m5L_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQM120N10-3M8_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 125nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 360 Stücke: Lieferzeit 7-14 Tag (e) |
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SQM120P06-07L_GE3 | VISHAY |
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auf Bestellung 700 Stücke: Lieferzeit 7-14 Tag (e) |
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SQS141ELNW-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -79A; Idm: -227A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -79A Pulsed drain current: -227A Power dissipation: 119W Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 141nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQS142ENW-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 110A; Idm: 271A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 271A Power dissipation: 113W Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQS401EN-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -16A; Idm: -64A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -16A Pulsed drain current: -64A Power dissipation: 20W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQSA82CENW-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 35A; 27W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 35A Power dissipation: 27W Gate-source voltage: ±20V On-state resistance: 97.1mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQSA84CENW-T1_GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 16A; Idm: 54A; 27W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 16A Pulsed drain current: 54A Power dissipation: 27W Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SS10P3CL-M3/86A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape Case: SMPC Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 10V Max. forward voltage: 0.52V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 200A Type of diode: Schottky rectifying Capacitance: 560pF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS10P6-M3/86A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape Case: SMPC Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 280A Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SS10P6HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Capacitance: 560pF Max. forward voltage: 0.67V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 280A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS10PH10HM3_A/H | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape Case: SMPC Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Capacitance: 270pF Max. off-state voltage: 100V Max. forward voltage: 0.88V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS10PH45-M3/86A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Case: SMPC Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 45V Max. forward voltage: 0.72V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 200A Type of diode: Schottky rectifying Capacitance: 400pF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS10PH45HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.72V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS12-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2718 Stücke: Lieferzeit 7-14 Tag (e) |
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SS14-E3/5AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6987 Stücke: Lieferzeit 7-14 Tag (e) |
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SS14-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16201 Stücke: Lieferzeit 7-14 Tag (e) |
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SS14-M3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS15-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5164 Stücke: Lieferzeit 7-14 Tag (e) |
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SS15P3S-M3/87A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 50V Max. forward voltage: 0.75V Load current: 1A Max. forward impulse current: 40A Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS16-E3/5AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.75V Leakage current: 5mA Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10230 Stücke: Lieferzeit 7-14 Tag (e) |
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SS16-E3/61T | VISHAY |
![]() ![]() Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8855 Stücke: Lieferzeit 7-14 Tag (e) |
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SS16HE3-B/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8677 Stücke: Lieferzeit 7-14 Tag (e) |
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SS1FH10-M3/H | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 1A; DO219AB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Capacitance: 70pF Case: DO219AB Max. forward voltage: 0.8V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1680 Stücke: Lieferzeit 7-14 Tag (e) |
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SS1H10-E3/5AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Case: SMA Kind of package: reel; tape Leakage current: 0.5mA Max. forward impulse current: 50A Anzahl je Verpackung: 7500 Stücke |
Produkt ist nicht verfügbar |
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SS1H10-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.86V Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2040 Stücke: Lieferzeit 7-14 Tag (e) |
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SS1H10-M3/5AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.86V Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SS1H9-E3/61T | VISHAY |
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Produkt ist nicht verfügbar |
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SS1P3L-M3/84A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO220AA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Capacitance: 110pF Case: DO220AA Max. forward voltage: 0.45V Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1890 Stücke: Lieferzeit 7-14 Tag (e) |
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SS1P4L-M3/84A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.38V Case: SMP Kind of package: reel; tape Leakage current: 15mA Max. forward impulse current: 50A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
SQJ126EP-T1_GE3 |
Hersteller: VISHAY
SQJ126EP-T1-GE3 SMD N channel transistors
SQJ126EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ158EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ164ELP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 130A
Power dissipation: 187W
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 130A
Power dissipation: 187W
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ170ELP-T1_GE3 |
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Hersteller: VISHAY
SQJ170ELP-T1-GE3 SMD N channel transistors
SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ402EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ409EP-T1_BE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ422EP-T1_BE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431AEP-T1_BE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ443EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ457EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_BE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ461EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ463EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ465EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.56 EUR |
51+ | 1.42 EUR |
64+ | 1.13 EUR |
68+ | 1.06 EUR |
500+ | 1.04 EUR |
SQJ476EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ481EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2993 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.19 EUR |
74+ | 0.97 EUR |
103+ | 0.7 EUR |
107+ | 0.67 EUR |
SQJ486EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ858AEP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ868EP-T1_GE3 |
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Hersteller: VISHAY
SQJ868EP-T1-GE3 SMD N channel transistors
SQJ868EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.4 EUR |
57+ | 1.26 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
SQJA16EP-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 575A
Power dissipation: 500W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 575A
Power dissipation: 500W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJB70EP-T1_GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJQ130EL-T1_GE3 |
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Hersteller: VISHAY
SQJQ130EL-T1-GE3 SMD N channel transistors
SQJQ130EL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJQ184E-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 430A; Idm: 1200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 430A
Pulsed drain current: 1.2kA
Power dissipation: 600W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 272nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 430A; Idm: 1200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 430A
Pulsed drain current: 1.2kA
Power dissipation: 600W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 272nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQJQ900E-T1_GE3 |
Hersteller: VISHAY
SQJQ900E-T1-GE3 Multi channel transistors
SQJQ900E-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQJQ960EL-T1_GE3 |
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Hersteller: VISHAY
SQJQ960EL-T1-GE3 Multi channel transistors
SQJQ960EL-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQM100N04-2m7_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 98A
Power dissipation: 157W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 95.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 98A
Power dissipation: 157W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 95.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQM100P10-19L_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -53A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -53A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQM120N06-3m5L_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQM120N10-3M8_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 360 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.68 EUR |
18+ | 4.2 EUR |
23+ | 3.25 EUR |
24+ | 3.07 EUR |
SQM120P06-07L_GE3 |
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Hersteller: VISHAY
SQM120P06-07L-GE3 SMD P channel transistors
SQM120P06-07L-GE3 SMD P channel transistors
auf Bestellung 700 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.58 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
800+ | 2.53 EUR |
SQS141ELNW-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -79A; Idm: -227A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -79A
Pulsed drain current: -227A
Power dissipation: 119W
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -79A; Idm: -227A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -79A
Pulsed drain current: -227A
Power dissipation: 119W
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQS142ENW-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 110A; Idm: 271A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 271A
Power dissipation: 113W
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 110A; Idm: 271A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 271A
Power dissipation: 113W
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQS401EN-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16A; Idm: -64A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 20W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16A; Idm: -64A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 20W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQSA82CENW-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 35A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 35A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 97.1mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 35A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 35A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 97.1mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQSA84CENW-T1_GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 16A; Idm: 54A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 16A
Pulsed drain current: 54A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 16A; Idm: 54A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 16A
Pulsed drain current: 54A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SS10P3CL-M3/86A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape
Case: SMPC
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 10V
Max. forward voltage: 0.52V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Type of diode: Schottky rectifying
Capacitance: 560pF
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape
Case: SMPC
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 10V
Max. forward voltage: 0.52V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Type of diode: Schottky rectifying
Capacitance: 560pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10P6-M3/86A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Case: SMPC
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 280A
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Case: SMPC
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 280A
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
74+ | 0.97 EUR |
104+ | 0.69 EUR |
117+ | 0.61 EUR |
134+ | 0.53 EUR |
142+ | 0.5 EUR |
SS10P6HM3-A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH10HM3_A/H |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape
Case: SMPC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 270pF
Max. off-state voltage: 100V
Max. forward voltage: 0.88V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape
Case: SMPC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 270pF
Max. off-state voltage: 100V
Max. forward voltage: 0.88V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH45-M3/86A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Case: SMPC
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 45V
Max. forward voltage: 0.72V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Type of diode: Schottky rectifying
Capacitance: 400pF
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Case: SMPC
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 45V
Max. forward voltage: 0.72V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Type of diode: Schottky rectifying
Capacitance: 400pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH45HM3-A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS12-E3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2718 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
252+ | 0.28 EUR |
352+ | 0.2 EUR |
479+ | 0.15 EUR |
962+ | 0.074 EUR |
1017+ | 0.07 EUR |
SS14-E3/5AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6987 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
545+ | 0.13 EUR |
642+ | 0.11 EUR |
764+ | 0.094 EUR |
849+ | 0.084 EUR |
1102+ | 0.065 EUR |
1166+ | 0.061 EUR |
SS14-E3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16201 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
627+ | 0.11 EUR |
754+ | 0.095 EUR |
915+ | 0.078 EUR |
968+ | 0.074 EUR |
5400+ | 0.071 EUR |
SS14-M3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS15-E3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5164 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
575+ | 0.12 EUR |
745+ | 0.097 EUR |
975+ | 0.074 EUR |
1030+ | 0.07 EUR |
SS15P3S-M3/87A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 1A
Max. forward impulse current: 40A
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 1A
Max. forward impulse current: 40A
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS16-E3/5AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Leakage current: 5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Leakage current: 5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10230 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
556+ | 0.13 EUR |
589+ | 0.12 EUR |
697+ | 0.1 EUR |
1003+ | 0.071 EUR |
1062+ | 0.067 EUR |
SS16-E3/61T | ![]() |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8855 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
556+ | 0.13 EUR |
697+ | 0.1 EUR |
903+ | 0.079 EUR |
955+ | 0.075 EUR |
SS16HE3-B/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8677 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
264+ | 0.27 EUR |
404+ | 0.18 EUR |
527+ | 0.14 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
1800+ | 0.096 EUR |
SS1FH10-M3/H |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; DO219AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 70pF
Case: DO219AB
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; DO219AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 70pF
Case: DO219AB
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1680 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
278+ | 0.26 EUR |
368+ | 0.19 EUR |
414+ | 0.17 EUR |
477+ | 0.15 EUR |
506+ | 0.14 EUR |
SS1H10-E3/5AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Leakage current: 0.5mA
Max. forward impulse current: 50A
Anzahl je Verpackung: 7500 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Leakage current: 0.5mA
Max. forward impulse current: 50A
Anzahl je Verpackung: 7500 Stücke
Produkt ist nicht verfügbar
SS1H10-E3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.86V
Max. forward impulse current: 50A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.86V
Max. forward impulse current: 50A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2040 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
265+ | 0.27 EUR |
290+ | 0.25 EUR |
385+ | 0.19 EUR |
405+ | 0.18 EUR |
SS1H10-M3/5AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.86V
Max. forward impulse current: 50A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.86V
Max. forward impulse current: 50A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS1P3L-M3/84A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO220AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Case: DO220AA
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO220AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Case: DO220AA
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1890 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
264+ | 0.27 EUR |
439+ | 0.16 EUR |
486+ | 0.15 EUR |
625+ | 0.11 EUR |
SS1P4L-M3/84A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMP
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMP
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar